ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V(BR)DSS= 30V : RDS(on)= 0.12 ; ID= 3.1A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.21 ; ID= -2.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SM8 FEATURES • Low on-resistance S1 • Fast switching speed S4 G1 G4 • Low threshold • Low gate drive D1, D2 D3, D4 • Single SM-8 surface mount package G3 G2 APPLICATIONS • Single phase DC fan motor drive S2 S3 ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHC3A01T8TA 7” 12mm 1,000 units ZXMHC3A01T8TC 13” 12mm 4,000 units PINOUT DEVICE MARKING • ZXMH C3A01 Top View DRAFT ISSUE E - APRIL 2004 1 SEMICONDUCTORS ZXMHC3A01T8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-Channel P-channel UNIT V Drain-source voltage V DSS 30 -30 Gate-source voltage V GS ±20 ±20 V 3.1 -2.3 A 2.5 -1.8 A 2.7 -2.0 A 14.5 -10.8 A 2.3 -2.2 A Continuous drain current (V GS = 10V; TA =25°C)(b)(d) I D (VGS = 10V; TA =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) Pulsed drain current (c) I DM Continuous source current (body diode) (b) IS Pulsed source current (body diode) (c) I SM Power dissipation at T A =25°C (a) (d) Linear derating factor PD (b) (d) PD Power dissipation at T A =25°C Linear derating factor Operating and storage temperature range T j , T stg 14.5 -10.8 A 1.3 W 10.4 mW/°C 1.7 W 13.6 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) (d) R JA 96 °C/W Junction to ambient (b) (d) R JA 73 °C/W NOTES (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4, D= 0.02, pulse width 300S - pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph. (d) For device with one active die. DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 2 ZXMHC3A01T8 CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 3 SEMICONDUCTORS ZXMHC3A01T8 N-channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Drain-source breakdown voltage V (BR)DSS 30 Zero gate voltage drain current I DSS 1.0 A V DS =30V, V GS =0V Gate-body leakage I GSS 100 nA Gate-source threshold voltage V GS(th) 3.0 V V GS =±20V, V DS =0V I D = 250A, V DS =V GS Static drain-source on-state resistance (1) R DS(on) 0.12 ⍀ V GS = 10V, I D = 2.5A 0.18 ⍀ V GS = 4.5V, I D = 2.0A Forward transconductance (1) (3) g fs 3.5 S V DS =4.5V, I D = 2.5A Input capacitance C iss 190 pF Output capacitance C oss 38 pF Reverse transfer capacitance C rss 20 pF Turn-on-delay time t d(on) 1.7 ns Rise time tr 2.3 ns Turn-off delay time t d(off) 6.6 ns Fall time tf 2.9 ns Total gate charge Qg 3.9 nC Gate-source charge Q gs 0.6 nC Gate drain charge Q gd 0.9 nC STATIC V 1.0 I D = 250A, V GS =0V DYNAMIC (3) V DS = 25V, V GS =0V f=1MHz SWITCHING (2) (3) V DD = 15V, I D = 2.5A R G ≅ 6.0Ω, V GS = 10V V DS = 15V, V GS = 10V I D = 2.5A SOURCE-DRAIN DIODE Diode forward voltage (1) V SD Reverse recovery time (3) Reverse recovery charge (3) 0.95 V T j =25°C, I S = 1.7A, V GS =0V T j =25°C, I S = 2.5A, di/dt=100A/s t rr 17.7 ns Q rr 13.0 nC NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 4 ZXMHC3A01T8 N-channel TYPICAL CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 5 SEMICONDUCTORS ZXMHC3A01T8 N-channel TYPICAL CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 6 ZXMHC3A01T8 P-channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Drain-source breakdown voltage V (BR)DSS -30 Zero gate voltage drain current I DSS Gate-body leakage I GSS Gate-source threshold voltage V GS(th) Static drain-source on-state resistance (1) R DS(on) Forward transconductance (1) (3) g fs 2.5 Input capacitance C iss Output capacitance Reverse transfer capacitance MAX. UNIT CONDITIONS STATIC V I D = -250A, V GS =0V -1.0 A V DS = -30V, V GS =0V V GS =±20V, V DS =0V 100 nA -3.0 V 0.21 ⍀ 0.33 ⍀ V GS = -4.5V, I D = -1.1A S V DS = -15V, I D = -1.4A 204 pF C oss 39.8 pF V DS = -15V, V GS =0V f=1MHz C rss 25.8 pF t d(on) 1.2 ns ns -1.0 I D = -250A, V DS =V GS V GS = -10V, I D = -1.4A DYNAMIC (3) SWITCHING (2) (3) Turn-on-delay time V DD = -15V, I D = -1A R G ≅ 6.0⍀, V GS = -10V Rise time tr 2.3 Turn-off delay time t d(off) 12.1 ns Fall time tf 7.5 ns 2.6 nC V DS = -15V, V GS = -5V I D = -1.4A V DS = -15V, V GS = -10V I D = -1.4A Total gate charge Total gate charge Qg 5.2 nC Gate-source charge Q gs 0.7 nC Gate drain charge Q gd 0.9 nC Diode forward voltage (1) V SD -0.85 Reverse recovery time (3) t rr Reverse recovery charge (3) Q rr SOURCE-DRAIN DIODE -0.95 V T j =25°C, I S = -1.1A, V GS =0V 19 ns T j =25°C, I S = -0.95A, 15 nC di/dt=100A/s NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE E - APRIL 2004 7 SEMICONDUCTORS ZXMHC3A01T8 P-channel TYPICAL CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 8 ZXMHC3A01T8 P-channel TYPICAL CHARACTERISTICS DRAFT ISSUE E - APRIL 2004 9 SEMICONDUCTORS ZXMHC3A01T8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches Millimeters DIM Inches DIM Min Max Typ. Min Max Typ. A - 1.7 - - 0.067 - A1 0.02 0.1 - 0.008 0.004 b - - 0.7 - - Min Max Typ. Min Max Typ. e1 - - 4.59 - - 0.1807 - e2 - - 1.53 - - 0.0602 0.0275 He 6.7 7.3 - 0.264 0.287 - c 0.24 0.32 - 0.009 0.013 - Lp 0.9 - - 0.035 - - D 6.3 6.7 - 0.248 0.264 - ␣ - 15° - - 15° - E 3.3 3.7 - 0.130 0.145 -  - - 10° - - 10° © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 Telephone: (852) 26100 611 Fax: (852) 24250 494 Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] [email protected] [email protected] [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com DRAFT ISSUE E - APRIL 2004 SEMICONDUCTORS 10