DIODES ZXMN3A14FTA

ZXMN3A14F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=30V : RDS(on)=0.065 ; ID=3.9A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A14FTA
7”
8mm
3000 units
ZXMN3A14FTC
13”
8mm
10000 units
DEVICE MARKING
• 314
ISSUE 1 - OCTOBER 2005
1
SEMICONDUCTORS
ZXMN3A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
30
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain Current @ V GS = 10V; T A =25°C (b)
@ V GS = 10V; T A =70°C (b)
@ V GS = 10V; T A =25°C (a)
ID
3.9
A
3.2
A
3.2
A
Pulsed Drain Current (c)
I DM
18
A
Continuous Source Current (Body Diode) (b)
IS
2.3
A
Pulsed Source Current (Body Diode) (c)
I SM
18
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1
W
8
mW/°C
Power Dissipation at T A =25°C (b)
PD
1.5
W
12
mW/°C
-55 to +150
°C
VALUE
UNIT
Linear Derating Factor
T j , T stg
Operating and Storage Temperature Range
LIMIT
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R ⍜JA
125
°C/W
Junction to Ambient (b)
R ⍜JA
83
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.
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SEMICONDUCTORS
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ZXMN3A14F
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS
ZXMN3A14F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
30
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
V
I D = 250␮A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1
␮A
V DS = 30V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =⫾12V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
V
I D = 250␮A, V DS =V GS
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance
(1) (3)
1.0
0.048
0.065
⍀
V GS = 10V, I D = 3.2A
0.069
0.095
⍀
V GS = 4.5V, I D = 2.6A
S
V DS = 15V, I D = 3.2A
g fs
7.1
Input Capacitance
C iss
448
pF
Output Capacitance
C oss
82
pF
Reverse Transfer Capacitance
C rss
49
pF
Turn-On-Delay Time
t d(on)
2.4
ns
Rise Time
tr
2.5
ns
Turn-Off Delay Time
t d(off)
13.1
ns
Fall Time
tf
5.3
ns
Total Gate Charge
Qg
8.6
nC
V DS = 15V, V GS = 10V
Gate-Source Charge
Q gs
1.4
nC
I D = 3.2A
Gate Drain Charge
Q gd
1.8
nC
V SD
0.85
DYNAMIC (3)
V DS = 15V, V GS =0V
f=1MHz
SWITCHING (2) (3)
V DD = 15V, V GS = 10V
I D = 1A
R G ≅6.0 ⍀
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
0.95
V
T j =25°C, I S = (2.5)A,
V GS =0V
t rr
13
ns
T j =25°C, I F = (1.6)A,
Q rr
7
NC
di/dt=100A/␮s
NOTES
(1) Measured under pulsed conditions. Pulse widt h ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
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ZXMN3A14F
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZXMN3A14F
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ZXMN3A14F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
DIM
MIN
MAX
INCHES
MIN
MILLIMETRES
DIM
MAX
MIN
MAX
INCHES
MIN
MAX
0.020
A
2.67
3.05
0.105
0.120
H
0.33
0.51
0.013
B
1.20
1.40
0.047
0.055
K
0.01
0.10
0.0004
0.004
C
ᎏ
1.10
ᎏ
0.043
L
2.10
2.50
0.083
0.0985
0.45
0.64
0.018
0.025
D
0.37
0.53
0.015
0.021
M
F
0.085
0.15
0.0034
0.0059
N
0.95 NOM
0.0375 NOM
⍜
10⬚ TYP
10⬚ TYP
G
1.90 NOM
0.075 NOM
© Zetex Semiconductors plc 2005
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
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SEMICONDUCTORS