DIODES ZXMN3A03E6TA

ZXMN3A03E6
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = 30V; RDS(ON) = 0.050
ID = 4.6A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A03E6TA
7”
8mm
3000 units
ZXMN3A03E6TC
13”
8mm
10000 units
DEVICE MARKING
Top View
• 3A3
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1
SEMICONDUCTORS
ZXMN3A03E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-source voltage
V DSS
Gate source voltage
V GS
Continuous drain current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed drain current (c)
LIMIT
UNIT
30
V
20
V
ID
4.6
3.7
3.7
A
I DM
17
A
IS
2.6
A
I SM
17
A
(a)
PD
1.1
8.8
W
mW/°C
Power dissipation at T A =25°C (b)
Linear derating factor
PD
1.7
13.6
W
mW/°C
Operating and storage temperature range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Continuous source current (body diode)
Pulsed source current (body diode) (c)
Power dissipation at T A =25°C
Linear derating factor
(b)
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to ambient
(a)
R θJA
113
°C/W
Junction to ambient
(b)
R θJA
73
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
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SEMICONDUCTORS
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ZXMN3A03E6
CHARACTERISTICS
ISSUE 3 - OCTOBER 2005
3
SEMICONDUCTORS
ZXMN3A03E6
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
30
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-source breakdown voltage
V (BR)DSS
Zero gate voltage drain current
I DSS
Gate-body leakage
I GSS
Gate-source threshold voltage
V GS(th)
Static drain-source on-state resistance
Forward transconductance (1)(3)
(1)
V
I D =250␮A, V GS =0V
0.5
␮A
V DS =30V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
I =250␮A, V DS = V GS
D
⍀
⍀
V GS =10V, I D =7.8A
V GS =4.5V, I D =6.8A
V DS =10V,I D =7.8A
1
R DS(on)
0.050
0.065
g fs
10
S
Input capacitance
C iss
600
pF
Output capacitance
C oss
104
pF
Reverse transfer capacitance
C rss
58.5
pF
t d(on)
2.9
ns
DYNAMIC
(3)
SWITCHING
V DS =25 V, V GS =0V,
f=1MHz
(2) (3)
Turn-on delay time
Rise time
tr
6.4
ns
Turn-off delay time
t d(off)
16.0
ns
Fall time
tf
11.2
ns
Gate charge
Qg
6.9
nC
Total gate charge
Qg
12.6
nC
Gate-source charge
Q gs
2.0
nC
Gate-drain charge
Q gd
2.0
nC
Diode forward voltage (1)
V SD
0.85
Reverse recovery time (3)
t rr
Reverse recovery charge (3)
Q rr
V DD =15V, I D =3.5A
R G =6.0⍀, V GS =10V
V DS =15V,V GS =5V,
I D =3.5A
V DS =15V,V GS =10V,
I D =3.5A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =3.2A,
V GS =0V
18.8
ns
14.1
nC
T J =25°C, I F =3.5A,
di/dt= 100A/µs
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
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ZXMN3A03E6
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZXMN3A03E6
TYPICAL CHARACTERISTICS
ISSUE 3 - OCTOBER 2005
SEMICONDUCTORS
6
ZXMN3A03E6
PACKAGE OUTLINE
PAD LAYOUT DETAILS
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES.
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
0.90
1.45
0.35
0.057
E
2.60
3.00
0.102
0.118
A1
0.00
0.15
0
0.006
E1
1.50
1.75
0.059
0.069
A2
0.90
1.30
b
0.35
0.50
0.035
0.051
L
0.10
0.60
0.004
0.002
0.014
0.019
e
0.95 REF
0.037 REF
C
0.09
0.20
0.0035
0.008
e1
1.90 REF
0.074 REF
D
2.80
3.00
0.110
0.118
L
0°
10°
0°
10°
© Zetex Semiconductors plc 2005
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ISSUE 3 - OCTOBER 2005
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SEMICONDUCTORS