DIODES ZXMN2A04DN8

ZXMN2A04DN8
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 20V; RDS(ON)= 0.025
; ID= 7.7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
SO8
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A04DN8TA
7’‘
12mm
500 units
ZXMN2A04DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMN
2A04D
Top view
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SEMICONDUCTORS
ZXMN2A04DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
20
V
V GS
⫾12
V
ID
7.7
A
(V GS =10V; T A =70°C) (b) (d)
6.2
A
(V GS =10V; T A =25°C) (a) (d)
5.9
A
Gate Source Voltage
Continuous Drain Current
(V GS =10V; T A =25°C) (b) (d)
Pulsed Drain Current (c)
I DM
38
A
Continuous Source Current (Body Diode) (b)
IS
2.9
A
Pulsed Source Current (Body Diode) (c)
I SM
38
A
Power Dissipation at T A =25°C (a) (d)
PD
1.25
W
Linear Derating Factor
Power Dissipation at T A =25°C (a) (e)
Linear Derating Factor
10
mW/°C
PD
1.8
W
14
mW/°C
Power Dissipation at T A =25°C (b) (d)
PD
Linear Derating Factor
T j :T stg
Operating and Storage Temperature Range
2.1
W
17
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a) (d)
R ⍜JA
100
°C/W
Junction to Ambient (b) (e)
R ⍜JA
70
°C/W
(b) (d)
R ⍜JA
60
°C/W
Junction to Ambient
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
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SEMICONDUCTORS
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ZXMN2A04DN8
CHARACTERISTICS
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SEMICONDUCTORS
ZXMN2A04DN8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
20
TYP.
MAX. UNIT CONDITIONS
STATIC
V
I D =250␮A, V GS =0V
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
0.5
␮A
Gate-Body Leakage
I GSS
100
nA
V
I =250␮A, V DS = V GS
0.025
Ω
V GS =4.5V, I D =5.9A
0.035
⍀
V GS =2.5V, I D =5A
V DS =10V,I D =5.9A
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
R DS(on)
0.7
Resistance (1)
Forward Transconductance (3)
g fs
40
S
V DS =20V, V GS =0V
V GS =⫾12V, V DS =0V
D
DYNAMIC (3)
Input Capacitance
C iss
1880
pF
Output Capacitance
C oss
506
pF
Reverse Transfer Capacitance
C rss
386
pF
V DS =10V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
7.9
ns
Rise Time
tr
14.8
ns
Turn-Off Delay Time
t d(off)
50.5
ns
Fall Time
tf
30.6
ns
Gate Charge
Qg
22.1
nC
Total Gate Charge
Qg
40.5
nC
Gate-Source Charge
Q gs
5.6
nC
V DS =10V,V GS =4.5V,
Gate-Drain Charge
Q gd
8.0
nC
I D =5.9A
V SD
0.85
V DD =10V, I D =1A
R G ≅6⍀, V GS =5V
V DS =15V,V GS =5V,
I D =3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
0.95
V
T J =25°C, I S =5.1A,
V GS =0V
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
18.0
ns
T J =25°C, I F =1.9A,
8.9
nC
di/dt= 100A/µs
NOTES:
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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SEMICONDUCTORS
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ZXMN2A04DN8
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZXMN2A04DN8
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
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ZXMN2A04DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
⍜
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
L
H
D
E
MILLIMETERS
DIM
Pin 1
A
c
e
0.050 BSC
1.27 BSC
b
e
A1
Seating Plane
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex Semiconductors plc 2004
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SEMICONDUCTORS