ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (Ω) ID (A) 30 0.028 @ VGS= 10V 7.1 0.045 @ VGS= 4.5V 5.6 Description This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed. Features D1 • Low on-resistance • 4.5V gate drive capability • Fast switching bullet G1 Applications DC-DC Converters • Power management functions • Motor Control • Backlighting Ordering information DEVICE ZXMN3G32DN8TA G2 S1 • Reel size (inches) Tape width (mm) Quantity per reel 7 12 500 D2 S2 S1 D1 G1 D1 S2 D2 G2 D2 Device marking ZXMN 3G32D Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMN3G32DN8 Absolute maximum ratings Parameter Symbol Limit Unit Drain source voltage VDSS 30 V Gate source voltage VGS ±20 V ID 7.1 5.7 5.5 A A A IDM 33.6 A IS 3.1 A Pulsed source current (body diode)(c) ISM 33.6 A Power dissipation at TA =25°C(a)(d) PD 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.1 W 17 mW/°C Tj, Tstg -55 to 150 °C Continous Drain Current @ VGS=10; TA=25°C(b) @ VGS=10; TA=70°C(b) @ VGS=10; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Linear derating factor PD Power dissipation at TA =25°C(a)(e) Linear derating factor PD Power dissipation at TA =25°C(b)(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a)(d) R⍜JA 100 °C/W Junction to ambient(a)(e) R⍜JA 70 °C/W Junction to ambient(b)(d) R⍜JA 60 °C/W Junction to lead(f) R⍜JL 51 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at end of drain lead). Issue 1 - January 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXMN3G32DN8 Thermal characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXMN3G32DN8 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-Source Breakdown Voltage V(BR)DSS 30 Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate-Source Threshold Voltage VGS(th) Static Drain-Source On-State Resistance (*) RDS(on) Forward Transconductance(*)(†) gfs Input Capacitance Typ. Max. Unit Conditions Static V ID= 250µA, VGS=0V 0.5 µA VDS= 30V, VGS=0V 100 nA VGS=±20V, VDS=0V 3.0 V ID= 250µA, VDS=VGS 0.028 0.045 Ω Ω VGS= 10V, ID= 6.0A VGS= 4.5V, ID= 4.9A 12 S VDS= 15V, ID= 6.0A Ciss 472 pF Output Capacitance Coss 178 pF Reverse Transfer Capacitance Crss 65 pF Turn-On-Delay Time td(on) 2.5 ns Rise Time tr 3.1 ns Turn-Off Delay Time td(off) 14 ns Fall Time tf 9.7 ns Total Gate Charge Qg 10.5 nC Gate-Source Charge Qgs 1.86 nC Gate Drain Charge Qgd 2.3 nC VSD 0.68 1.0 Dynamic (†) VDS= 15V, VGS=0V f=1MHz Switching (‡)(†) VDD= 15V, ID= 1A RG ≅ 6.0Ω, VGS=10V VDS= 15V, VGS= 10V ID= 6A Source-drain diode Diode Forward Voltage(*) 1.2 V Tj=25°C, IS= 1.7A, VGS=0V NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%. (†) For design aid only, not subject to production testing (‡) Switching characteristics are independent of operating junction temperature. Issue 1 - January 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXMN3G32DN8 Typical characteristics Issue 1 - January 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com ZXMN3G32DN8 Test circuits Issue 1 - January 2008 © Zetex Semiconductors plc 2008 6 www.zetex.com ZXMN3G32DN8 Package outline - SO8 DIM Inches Millimeters Min. Max. Min. Max. DIM Inches Min. Millimeters Max. 0.050 BSC Min. Max. A 0.053 0.069 1.35 1.75 e A1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 1.27 BSC 0.51 D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25 H 0.228 0.244 5.80 6.20 ⍜ 0° 8° 0° 8° E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50 L 0.016 0.050 0.40 1.27 - - - - - Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - January 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXMN3G32DN8 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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