ZETEX ZXMN6A09K

ZXMN6A09K
60V N-CHANNEL ENHANCEMENT MODE MOSFET IN D-PAK
SUMMARY
V(BR)DSS =60V : RDS(on)=0.045 ; ID=11.2A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage power
management applications.
FEATURES
DPAK
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• D-Pak (T0-252) package
APPLICATIONS
• DC-DC Converters
• Power Management functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
ZXMN6A09KTC
PINOUT
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
13”
16mm
2500 units
DEVICE MARKING
• ZXMN
6A09K
TOP VIEW
ISSUE 3 - JANUARY 2004
1
SEMICONDUCTORS
ZXMN6A09K
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V DSS
60
V
V GS
±20
V
ID
11.2
A
Gate-source voltage
Continuous drain current @ V GS =10V; T A =25°C
Pulsed drain current
(b)
@ V GS =10V; T A =70°C (b)
9.0
@ V GS =10V; T A =25°C (a)
7.3
(c)
Continuous source current (body diode)
I DM
(b)
IS
Pulsed source current (body diode) (c)
I SM
Power dissipation at T A =25°C (a)
PD
Linear derating factor
Power dissipation at T A =25°C (b)
PD
Linear derating factor
Power dissipation at T A =25°C (d)
PD
Linear derating factor
T j , T stg
Operating and storage temperature range
40
A
10.8
A
40
A
4.3
W
34.4
mW/°C
10.1
W
80.8
mW/°C
2.15
W
17.2
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
29
°C/W
Junction to ambient (b)
R ⍜JA
12.3
°C/W
(d)
R ⍜JA
58
°C/W
Junction to ambient
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
2
ZXMN6A09K
TYPICAL CHARACTERISTICS
ISSUE 3 - JANUARY 2004
3
SEMICONDUCTORS
ZXMN6A09K
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Drain-source breakdown voltage
V (BR)DSS
60
Zero gate voltage drain current
I DSS
Gate-body leakage
I GSS
Gate-source threshold voltage
V GS(th)
Static drain-source on-state resistance (1)
R DS(on)
Forward transconductance (1) (3)
g fs
15
Input capacitance
C iss
1426
pF
Output capacitance
C oss
134
pF
Reverse transfer capacitance
C rss
64
pF
STATIC
DYNAMIC
V
I D = 250␮A, V GS =0V
1
␮A
V DS = 60V, V GS =0V
100
nA
1.0
V GS =±20V, V DS =0V
V
I D = 250␮A, V DS =V GS
0.045
⍀
V GS = 10V, I D = 7.3A
0.070
⍀
V GS = 4.5V, I D = 5.6A
S
V DS = 15V, I D = 7.3A
(3)
SWITCHING
V DS = 30V, V GS =0V
f=1MHz
(2) (3)
Turn-on-delay time
t d(on)
4.8
ns
Rise time
tr
4.6
ns
Turn-off delay time
t d(off)
32.5
ns
Fall time
tf
14.5
ns
Total gate charge
Qg
15
nC
Total gate charge
Qg
29
nC
Gate-source charge
Q gs
7.0
nC
Gate drain charge
Q gd
4.7
nC
V SD
0.85
t rr
Q rr
V DD = 30V, I D = 1A
R G ≅6.0⍀, V GS = 10V
(refer to test circuit)
VDS = 30V, VGS = 4.5V
I D = 5.6A
V DS = 30V, V GS = 10V
I D = 7.3A
SOURCE-DRAIN DIODE
Diode forward voltage (1)
Reverse recovery time (3)
Reverse recovery charge
(3)
0.95
V
T j =25°C, I S = 6.6A,
V GS =0V
25.6
ns
26.0
nC
T j =25°C, I S = 3A,
di/dt=100A/␮s
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
4
ZXMN6A09K
TYPICAL CHARACTERISTICS
ISSUE 3 - JANUARY 2004
5
SEMICONDUCTORS
ZXMN6A09K
TYPICAL CHARACTERISTICS
ISSUE 3 - JANUARY 2004
SEMICONDUCTORS
6
ZXMN6A09K
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate
conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
2.18
2.38
0.086
0.094
e
A1
ᎏ
0.127
0.005
H
9.40
10.41
0.370
0.410
b
0.635
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.762
1.114
0.030
0.045
L1
2.74 REF
0.108 REF
b3
5.20
5.46
0.205
0.215
L2
0.051 BSC
0.020 BSC
A
Min
Max
2.30 BSC
Min
Max
0.090 BSC
c
0.457
0.609
0.018
0.024
L3
0.89
1.27
0.035
c2
0.457
0.584
0.018
0.023
L4
0.635
1.01
0.025
0.040
D
5.97
6.22
0.235
0.245
L5
1.14
1.52
0.045
0.060
⍜1⬚
0ⴗ
10ⴗ
0
10
⍜⬚
0ⴗ
15ⴗ
0ⴗ
15
D1
5.20
ᎏ
0.205
E
6.35
6.73
0.250
E1
4.32
ᎏ
0.170
0.265
0.050
© Zetex plc 2003
Corporate Headquaters
Regional sales offices
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 3 - JANUARY 2004
7
SEMICONDUCTORS