ZETEX ZXMN6A11DN8TC

ZXMN6A11DN8
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS= 60V; RDS(ON)= 0.14
ID= 2.7A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
SO8
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SO8 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN6A11DN8TA
7”
12mm
500 units
ZXMN6A11DN8TC
13”
12mm
2500 units
DEVICE MARKING
• ZXMN
6A11D
Top View
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ZXMN6A11DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
Gate Source Voltage
LIMIT
UNIT
60
V
V GS
⫾20
V
Continuous Drain Current V GS =10V; T A =25°C(b)
V GS =10V; T A =70°C(b)
V GS =10V; T A =25°C(a)
Pulsed Drain Current (c)
ID
2.7
2.2
2.1
A
I DM
8.3
A
Continuous Source Current (Body Diode) (b)
IS
3.2
A
Pulsed Source Current (Body Diode)(c)
I SM
8.3
A
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
PD
1.25
10
mW
mW/°C
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
PD
1.8
14
mW
mW/°C
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
PD
2.1
17
mW
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)(d)
R θJA
100
°C/W
Junction to Ambient (a)(e)
R θJA
70
°C/W
Junction to Ambient (b)(d)
R θJA
60
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
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ZXMN6A11DN8
CHARACTERISTICS
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ZXMN6A11DN8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
1
␮A
100
nA
CONDITIONS.
V (BR)DSS
I DSS
60
Zero Gate Voltage Drain Current
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (3)
g fs
4.9
C iss
C oss
330
pF
Output Capacitance
35.0
pF
Reverse Transfer Capacitance
C rss
17.0
pF
t d(on)
tr
1.95
ns
3.5
ns
t d(off)
tf
8.2
ns
Fall Time
4.6
ns
Gate Charge
Qg
3.0
nC
V DS =15V, V GS =5V,
I D =2.5A
Total Gate Charge
Qg
Q gs
5.7
nC
Gate-Source Charge
1.25
nC
V DS =15V,V GS =10V,
I D =2.5A
(refer to test circuit)
Gate-Drain Charge
Q gd
0.86
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
STATIC
Drain-Source Breakdown Voltage
V
1.0
⍀
⍀
V GS =⫾20V, V DS =0V
I =250␮A, V DS = V GS
D
V GS =10V, I D =4.4A
V GS =4.5V, I D =3.8A
S
V DS =15V,I D =2.5A
V
0.14
0.25
I D =250µA, V GS =0V
V DS =60V, V GS =0V
DYNAMIC (3)
Input Capacitance
V DS =40 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
V DD =15V, I D =2.5A
R G =6.0⍀,V GS =10V
(refer to test circuit)
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =2.8A,
V GS =0V
21.5
ns
20.5
nC
T J =25°C, I F =2.5A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXMN6A11DN8
TYPICAL CHARACTERISTICS
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ZXMN6A11DN8
TYPICAL CHARACTERISTICS
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ZXMN6A11DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
DIM
MIN
MAX
A
0.053
0.069
A1
0.004
0.010
D
0.189
0.197
H
0.228
0.244
E
0.150
0.157
L
0.016
0.050
e
0.050 BSC
b
0.013
0.020
c
0.008
0.010
⍜
0⬚
8⬚
h
0.010
0.020
© Zetex plc 2002
Zetex plc
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United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Zetex GmbH
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D-81673 München
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Germany
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Fax: (49) 89 45 49 49 49
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Telephone: (631) 360 2222
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