A Product Line of Diodes Incorporated ZXMN6A11G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • ID V(BR)DSS RDS(on) TA = 25°C 120mΩ @ VGS= 10V 4.4A 180mΩ @ VGS= 4.5V 3.5A Fast switching speed Low gate drive Low input capacitance “Green” component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability 60V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • DC-DC converters Power management functions Disconnect switches Motor Control Uninterrupted power supply • Case: SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below • Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 • Weight: 0.112 grams (approximate) D SOT223 G S Pin Out - Top Top View Equivalent Circuit Ordering Information (Note 1) Product ZXMN6A11GTA Notes: Marking See below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMN 6A11 ZXMN6A11G Document number: DS33556 Rev. 5 - 2 ZXMN = Product Type Marking Code, Line 1 6A11 = Product Type Marking Code, Line 2 1 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11G Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 10V Pulsed Drain Current VGS = 10V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (Note 3) TA = 70°C (Note 3) (Note 2) (Note 4) (Note 3) (Note 4) Value 60 ±20 Units V 4.4 ID 3.5 3.1 IDM IS ISM 15.6 5 15.6 A Symbol Value 2.0 16 3.9 31 62.5 32.0 9.8 -55 to +150 Unit Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Note 2) PD (Note 3) (Note 2) (Note 3) (Note 5) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t ≤ 10 sec. 4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300μs. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). ZXMN6A11G Document number: DS33556 Rev. 5 - 2 2 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11G Thermal Characteristics RDS(on) 2.00 Max Power Dissipation (W) ID Drain Current (A) 10 Limited 1.50 1 1.25 DC 1.00 1s 100m 100ms T amb=25°C 10m 25mm x 25mm 1oz FR4 1.75 0.75 10ms 25mm x 25mm 1oz FR4 0.50 1ms 100µs 1 0.25 0.00 10 VDS Drain-Source Voltage (V) 0 20 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Single Pulse Tamb=25°C 25mm x 25mm 1oz FR4 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS33556 Rev. 5 - 2 100 120 140 160 100 Pulse Width (s) ZXMN6A11G 80 Derating Curve Maximum Power (W) Thermal Resistance (°C/W) T amb=25°C 25mm x 25mm 1oz FR4 60 Temperature (°C) Safe Operating Area 60 40 Pulse Power Dissipation 3 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11G Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 ±100 V μA nA ID = 250μA, VGS = 0V VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) gfs VSD trr Qrr ⎯ 0.105 0.150 4.9 0.85 21.5 20.5 3.0 0.120 0.180 ⎯ 0.95 ⎯ ⎯ V Static Drain-Source On-Resistance (Note 6) 1.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ID = 250μA, VDS = VGS VGS = 10V, ID = 2.5A VGS = 4.5V, ID = 2A VDS = 15V, ID = 2.5A IS = 2.8A, VGS = 0V, TJ = 25°C IS = 2.8A, di/dt = 100A/μs TJ = 25°C Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 330 35.2 17.1 3.0 5.7 1.25 0.86 1.95 3.5 8.2 4.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transconductance (Notes 6 & 7) Diode Forward Voltage (Note 6) Reverse Recovery Time (Note 7) Reverse Recovery Charge (Note 7) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge (Note 8) Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate-Drain Charge (Note 8) Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8) Notes: Ω S V ns nC pF Test Condition VDS = 40V, VGS = 0V, f = 1.0MHz VGS = 4.5V nC ns VGS = 10V VDS = 15V ID = 2.5A VDD = 30V, ID = 2.5A, RG = 6Ω, VGS = 10V 6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. 7. For design aid only, not subject to production testing. 8. Switching characteristics are independent of operating junction temperature. ZXMN6A11G Document number: DS33556 Rev. 5 - 2 4 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11G Typical Characteristics T = 150°C 10V 5V ID Drain Current (A) ID Drain Current (A) T = 25°C 10 4V 3.5V 1 3V VGS 0.1 2.5V 0.1 1 2.5V 4 5 VGS Gate-Source Voltage (V) Normalised RDS(on) and VGS(th) ID Drain Current (A) 0.1 1.8 5V 10V 0.1 T = 25°C 10 On-Resistance v Drain Current Document number: DS33556 Rev. 5 - 2 RDS(on) 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 0.4 -50 ID = 250uA 0 50 100 150 Normalised Curves v Temperature ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) 4.5V VGS ZXMN6A11G ID = 2.5A Tj Junction Temperature (°C) 1 1 VGS = 10V 1.6 Typical Transfer Characteristics ID Drain Current (A) 10 Output Characteristics T = 25°C 4V 1 VDS Drain-Source Voltage (V) 1 3.5V 2V 0.1 T = 150°C 3V VGS 0.1 10 VDS = 10V 3 3V 1 Output Characteristics 2 4V 3.5V VDS Drain-Source Voltage (V) 10 10V 5V 10 10 1 T = 150°C T = 25°C 0.1 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11G 500 C Capacitance (pF) VGS = 0V 400 f = 1MHz 300 CISS COSS 200 CRSS 100 0 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) Typical Characteristics - continued 10 ID = 2.5A 8 6 VDS = 30V 4 2 0 0 1 2 3 4 5 Q - Charge (nC) 6 Gate-Source Voltage v Gate Charge Test Circuit Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN6A11G Document number: DS33556 Rev. 5 - 2 Switching time test circuit 6 of 8 www.diodes.com October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11G Package Outline Dimensions DIM A A1 A2 b b2 C Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33 Inches Min 0.0008 0.0610 0.026 0.114 0.009 Max 0.071 0.004 0.0649 0.033 0.122 0.013 DIM D e e1 E E1 L Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 - Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 - Suggested Pad Layout 3.8 0.15 2.0 0.079 6.3 0.248 2.0 0.079 1.5 0.059 ZXMN6A11G Document number: DS33556 Rev. 5 - 2 2.3 0.091 7 of 8 www.diodes.com mm inches October 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN6A11G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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