ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and freedom from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits. Features D • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT23 FLAT package G S Applications • Active clamping of primary side MOSFETs in 48 volt DC-DC converters Ordering information Device D Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 ZXMP2120FFTA S G Top view Device marking 1C4 Issue 1 - January 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXMP2120FF Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS -200 V Gate-source voltage VGS ± 20 V ID -137 mA Pulsed drain current(c) IDM -0.8 A Pulsed source current (body diode)(c) ISM -0.8 A Power dissipation at Tamb=25°C(a) PD 1 W 8 mW/°C 1.5 W 12.3 mW/°C Tj, Tstg -55 to +150 °C Continuous drain current @ VGS= 10V; Tamb=25°C(a) Linear derating factor PD Power dissapation at Tamb=25°C(b) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) R⍜JA 125 °C/W Junction to ambient(b) R⍜JA 81 °C/W Junction to NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 pcb measured at t ⱕ5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. Issue 1 - January 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com ZXMP2120FF Thermal characteristics Issue 1 - January 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com ZXMP2120FF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. V(BR)DSS -200 Max. Unit Conditions Static Drain-source breakdown voltage Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) On-state drain current(*) ID(on) Forward transconductance(*) (‡) gfs -1.5 V ID= 1mA, VGS=0V -10 A VDS= -200V, VGS=0V -100 A VDS= -160V, VGS=0V, T=125C(‡) 20 nA VGS=±20V, VDS=0V -3.5 V ID= 250A, VDS=VGS 28 ⍀ VGS= -10V, ID= -150mA -300 mA VDS= -25V, VGS=-10V 50 mS VDS= -25V, ID= -150mA VDS= -25V, VGS=0V f=1MHz Dynamic(‡) Input capacitance Ciss 100 pF Output capacitance Coss 25 pF Reverse transfer capacitance Crss 7 pF Turn-on-delay time td(on) 7 ns Rise time tr 15 ns Turn-off delay time td(off) 12 ns Fall time tf 15 ns Switching (†) (‡) VDD= -25V, VGS= -10V ID= -150mA RSOURCE ≈ 50⍀ NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Issue 1 - January 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXMP2120FF VGS= -10V - 8V -7V -0.6 ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) Typical charateristics -6V -0.4 -5V -0.2 -4.5V - 4V 0 -3.5V 0 -20 -40 -60 -80 -100 -0.3 - 5V -0.2 -4.5V -0.1 -3.5V 0 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -18 -16 -14 -12 -10 -8 ID= -6 -300mA -4 -200mA -2 -100mA -50mA 0 -6 -8 -8 -10 -10 VDS= -25V -0.6 -0.4 -10V -0.2 0 0 VGS-Gate Source Voltage (Volts) -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) Transfer Characteristics Voltage Saturation Characteristics 100 2.6 Normalised RDS(on) and VGS(th) RDS(ON) -Drain Source Resistance (Ω) -6 Saturation Characteristics -20 -4 -4 -2 VDS - Drain Source Voltage (Volts) Output Characteristics -2 -4V 0 VDS - Drain Source Voltage (Volts) 0 VGS= -10V - 8V - 7V -6V -0.4 50 ID= -300mA -200mA -I00mA -50mA 10 -1 -10 -20 VGS-Gate Source Voltage (Volts) © Zetex Semiconductors plc 2007 2.2 n) (o DS 2.0 1.8 ta sis Re e rc ou -S n i a Dr 1.6 1.4 1.2 eR nc VGS=VDS ID=-1mA 1.0 Gate Thresh old Voltage 0.8 0.6 -40 -20 0 VGS=-10V ID=-0.1A VGS(th) 20 40 60 80 100 120 140 160 180 T-Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature On-resistance vs gate-source voltage Issue 1 - January 2007 2.4 5 www.zetex.com ZXMP2120FF 200 200 180 180 gfs-Transconductance (mS) gfs-Transconductance (mS) Typical characteristics VDS=-25V 160 140 120 100 80 60 40 20 0 0 -0.2 -0.4 -0.6 160 140 120 80 60 40 20 0 -0.8 0 Transconductance v drain current VGS-Gate Source Voltage (Volts) C-Capacitance (pF) 80 Ciss 60 40 20 Coss Crss -20 -30 -40 -8 -10 ID=- 0.4A -2 VDS= -50V -100V -180V -4 -6 -8 -10 -12 -14 -16 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Q -C ha rge (nC) Capacitance v drain-source voltage © Zetex Semiconductors plc 2007 -6 0 0 -50 VDS-Drain Source Voltage (Volts) Issue 1 - January 2007 -4 Transconductance v gate-source voltage 100 -10 -2 VGS-Gate Source Voltage (Volts) ID- Drain Current (Amps) 0 VDS=-25V 100 Gate charge v gate-source voltage 6 www.zetex.com ZXMP2120FF Typical characteristics Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VCC 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms Issue 1 - January 2007 © Zetex Semiconductors plc 2007 Pulse width ⬍ 1S Duty factor 0.1% td(on) Switching time test circuit 7 www.zetex.com ZXMP2120FF Intentionally left blank Issue 1 - January 2007 © Zetex Semiconductors plc 2007 8 www.zetex.com ZXMP2120FF Package outline - SOT23F c D b e1 b e L1 L E E1 b E2 A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.15 0.0019 0.0059 O 0° 12° 0° 12° 0.95 ref 1.80 Dim. 2.00 0.0374 ref 0.0709 0.0787 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - January 2007 © Zetex Semiconductors plc 2007 9 www.zetex.com ZXMP2120FF Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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