ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC converters • Power management functions • Relay and solenoid driving • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP6A13FTA 7” 8mm 3000 units ZXMP6A13FTC 13” 8mm 10000 units DEVICE MARKING Top View • 7P6 ISSUE 2 - JULY 2004 1 ZXMP6A13F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS Gate Source Voltage LIMIT UNIT -60 V 20 V ID -1.1 -0.8 -0.9 A I DM -4.0 A IS -1.2 A V GS Continuous Drain Current V GS =10V; T A =25°C V GS =10V; T A =70°C V GS =10V; T A =25°C Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (b) (c) (b) (b) (a) I SM -4.0 A (a) PD 625 5 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 806 6.5 mW mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT Power Dissipation at T A =25°C Linear Derating Factor THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t ≤5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. ISSUE 2 - JULY 2004 2 ZXMP6A13F CHARACTERISTICS ISSUE 2 - JULY 2004 3 ZXMP6A13F ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -60 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS TYP. MAX. UNIT CONDITIONS STATIC Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) V GS(th) (1) V I D =-250A, V GS =0V -1 A V DS =-60V, V GS =0V 100 nA V GS =⫾20V, V DS =0V -1.0 R DS(on) 0.400 0.600 V I =-250A, V DS = V GS ⍀ ⍀ V GS =-10V, I D =-0.9A V GS =-4.5V, I D =-0.8A V DS =-15V,I D =-0.9A g fs 1.8 S Input Capacitance C iss 233 pF Output Capacitance C oss 17.4 pF Reverse Transfer Capacitance C rss 9.6 pF Turn-On Delay Time t d(on) 1.6 ns Rise Time tr 2.3 ns Turn-Off Delay Time t d(off) 13 ns Fall Time tf 5.8 ns Gate Charge Qg 2.4 nC Total Gate Charge Qg 5.1 nC Gate-Source Charge Q gs 0.7 nC Gate-Drain Charge Q gd 0.7 nC V SD -0.85 t rr Q rr DYNAMIC D (3) SWITCHING V DS =-30V, V GS =0V, f=1MHz (2) (3) V DD =-30V, I D =-1A R G 6.0⍀, V GS =-10V V DS =-30V,V GS =-5V, I D =-0.9A V DS =-30V,V GS =-10V, I D =-0.9A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) -0.95 V T J =25°C, I S =-0.8A, V GS =0V 22.6 ns T J =25°C, I F =-0.9A, di/dt= 100A/µs 23.2 nC NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JULY 2004 4 ZXMP6A13F TYPICAL CHARACTERISTICS ISSUE 2 - JULY 2004 5 ZXMP6A13F TYPICAL CHARACTERISTICS ISSUE 2 - JULY 2004 6 ZXMP6A13F PACKAGE OUTLINE PAD LAYOUT PACKAGE DIMENSIONS Millimeters DIM Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C ᎏ 1.10 ᎏ D 0.37 0.53 F 0.085 0.15 G 1.90 NOM Millimeters DIM Min Max H 0.33 K 0.01 0.043 L 0.015 0.021 M 0.0034 0.0059 0.075 NOM Inches Max Max 0.51 0.013 0.020 0.10 0.0004 0.004 2.10 2.50 0.083 0.0985 0.45 0.64 0.018 0.025 N 0.95 NOM 0.0375 NOM ᎏ ᎏ ᎏ © Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JULY 2004 7