DIODES ZXMP6A17N8TC

A Product Line of
Diodes Incorporated
ZXMP6A17N8
ADVANCE INFORMATION
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
•
ID
RDS(on)
TA = 25°C
125mΩ @ VGS = -10V
-3.4A
190mΩ @ VGS = -4.5V
-2.8A
-60V
Fast switching speed
•
Low input capacitance
•
“Green” component and RoHS compliant (Note 1)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
•
Case: SO-8
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals Connections: See diagram below
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
•
Motor control
•
Backlighting
•
DC-DC Converters
•
Power management functions
D
SO-8
G
S
Top View
Top View
Equivalent Circuit
Ordering Information (Note 1)
Product
ZXMP6A17N8TC
Notes:
Marking
See below
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMP
6A17
YYWW
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
ZXMP = Product Type Marking Code, Line 1
6A17 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
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ADVANCE INFORMATION
ZXMP6A17N8
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS = 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
TA = 70°C (Note 3)
(Note 2)
(Note 4)
(Note 3)
(Note 4)
ID
IDM
IS
ISM
Value
-60
±20
-3.42
-2.73
-2.7
-15.6
-3.4
-15.6
Unit
V
V
Value
1.56
12.5
2.5
20
80
50
32
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
Symbol
(Note 2)
PD
(Note 3)
(Note 2)
(Note 3)
(Note 5)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
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Thermal Characteristics
1.6
Max Power Dissipation (W)
-ID Drain Current (A)
RDS(on)
10 Limited
1
DC
1s
100m
100ms
10m
10ms
Single Pulse
T amb=25°C
1m
100m
1ms
100µs
1
10
-VDS Drain-Source Voltage (V)
1.4
25mm x 25mm
1oz FR4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
70
T amb=25°C
60
50
D=0.5
40
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100 120 140 160
100
1k
Single Pulse
T amb=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Number DS32076 Rev 1 - 2
80
100
Pulse Width (s)
ZXMP6A17N8
60
Derating Curve
Maximum Power (W)
80
40
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
ADVANCE INFORMATION
ZXMP6A17N8
Pulse Power Dissipation
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ADVANCE INFORMATION
ZXMP6A17N8
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-60
⎯
⎯
⎯
⎯
⎯
⎯
-0.5
±100
V
μA
nA
ID = -250μA, VGS = 0V
VDS = -60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
-1.0
⎯
V
Static Drain-Source On-Resistance (Note 6)
RDS (ON)
⎯
⎯
gfs
VSD
trr
Qrr
⎯
⎯
S
V
ns
nC
ID = -250μA, VDS = VGS
VGS = -10V, ID = -2.3A
VGS = -4.5V, ID = -1.9A
VDS = -15V, ID = -2.3A
IS = -2.0A, VGS = 0V
⎯
4.7
-0.85
25.1
27.2
⎯
0.125
0.190
⎯
-0.95
⎯
⎯
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
637
70
53
9.0
17.7
1.6
4.4
2.6
3.4
26.2
11.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse recovery time (Note 7)
Reverse recovery charge (Note 7)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Notes:
Ω
Test Condition
IS = -1.7A, di/dt = 100A/μs
VDS = -30V, VGS= 0V
f = 1MHz
VGS = -4.5V
VGS = -10V
VDS = -30V
ID = -2.2A
VDD = -30V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
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Typical Characteristics
10V
4V
3.5V
3V
1
2.5V
4.5V
3.5V
3V
2.5V
10
2V
0.1
5V
10V
T = 150°C
5V
10
-ID Drain Current (A)
-ID Drain Current (A)
T = 25°C
-VGS
0.01
1
2V
-VGS
0.1
1.5V
0.01
0.1
1
0.1
10
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
Normalised RDS(on) and VGS(th)
1.8
-ID Drain Current (A)
10
T = 150°C
1
T = 25°C
0.1
-VDS = 10V
1
2
3
VGS = -10V
1.6
ID = - 2.3A
RDS(on)
1.4
1.2
1.0
ID = -250uA
0.6
4
-50
2.5V
3V
3.5V
4V
5V
0.1
10V
T = 25°C
0.01
0.1
1
-ID Drain Current (A)
10
On-Resistance v Drain Current
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
-ISD Reverse Drain Current (A)
-VGS
1
50
100
150
Normalised Curves v Temperature
2V
10
0
Tj Junction Temperature (°C)
Typical Transfer Characteristics
100
VGS(th)
VGS = VDS
0.8
-VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
ADVANCE INFORMATION
ZXMP6A17N8
10
T = 150°C
1
T = 25°C
0.1
VGS= 0V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
-VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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Typical Characteristics - continued
1000
10
-VGS Gate-Source Voltage (V)
VGS = 0V
C Capacitance (pF)
ADVANCE INFORMATION
ZXMP6A17N8
f = 1MHz
800
CISS
600
COSS
400
CRSS
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
8
6
4
ID = -2.3A
2
VDS = -30V
0
0
2
4
6
8
10
12
Q - Charge (nC)
14
16
18
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Gate charge test circuit
Basic gate charge waveform
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
tr
td(off)
t(on)
tr
t(on)
Switching time waveforms
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
Pulse width ⬍ 1␮S
Duty factor 0.1%
td(on)
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Switching time test circuit
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ADVANCE INFORMATION
ZXMP6A17N8
Package Outline Dimensions
θ
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Max.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
Min.
1.27 BSC
Suggested Pad Layout
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.27
0.050
mm
inches
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
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ADVANCE INFORMATION
ZXMP6A17N8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
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