ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES DPAK • 5 amps continuous current • Up to 10 amps peak current • Low equivalent on resistance • Low saturation voltages APPLICATIONS • DC - DC converters • DC - DC modules • Power switches • Motor control • Automotive circuits • Inverter circuits PINOUT ORDERING INFORMATION DEVICE ZXT953KTC REEL SIZE TAPE WIDTH QUANTITY PER REEL 13" 16mm 2500 units DEVICE MARKING • ZXT953 TOP VIEW ISSUE 1 - DECEMBER 2003 1 SEMICONDUCTORS ZXT953K ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -140 V Collector-base voltage BV CER -140 V Collector-emitter voltage BV CEO -100 V Emitter-base voltage BV EBO -7 V Peak pulse current I CM -10 A Continuous collector current (b) IC -5 A Base current Power dissipation at T A =25°C (a) Linear derating factor IB -0.5 A PD 2.1 W 16.8 mW/°C Power dissipation at T A =25°C (b) PD Linear derating factor Power dissipation at T A =25°C (c) Linear derating factor PD Operating and storage temperature range T j , T stg 3.2 W 25.6 mW/°C 4.2 W 33.6 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) VALUE UNIT R ⍜JA 59 °C/W R ⍜JA 39 °C/W R ⍜JA 30 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. ISSUE 1 - DECEMBER 2003 SEMICONDUCTORS 2 ZXT953K CHARACTERISTICS ISSUE 1 - DECEMBER 2003 3 SEMICONDUCTORS ZXT953K ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Collector-base breakdown voltage BV CBO -140 -170 V I C = -100A Collector-emitter breakdown voltage BV CER -140 -170 V I C = -1A, R BE =ⱕ1k⍀ Collector-emitter breakdown voltage BV CEO -100 -125 V I C = -10mA* Emitter-base breakdown voltage BV EBO -7 -8.1 V I E = -100A Collector cut-off current I CBO ⬍1 -20 nA V CB = -100V Collector cut-off current I CER ⬍1 -20 nA VCB = -100V, RBE = ⱕ1k⍀ Emitter cut-off current I EBO ⬍1 -10 nA V EB = -6V Collector-emitter saturation voltage V CE(SAT) -20 -30 mV I C = -0.1A, I B = -10mA* -80 -100 mV IC = -1A, IB = -100mA* -140 -175 mV IC = -2A, IB = -200mA* -335 -390 mV IC = -5A, IB = -500mA* Base-emitter saturation voltage V BE(SAT) -1.01 -1.1 mV I C = -5A, I B = -500mA* Base-emitter turn-on voltage V BE(ON) -0.94 -1.05 mV I C = -5A, V CE = -1V* Static forward current transfer ratio h FE Transition frequency fT Output capacitance C OBO 100 225 100 200 50 85 IC = -3A, VCE = -1V* 15 30 IC = -5A, VCE = -1V* 15 IC = -10A, VCE = -1V* 125 I C = -10mA, V CE = -1V* IC = -1A, VCE = -1V* 300 MHz IC = -100mA, VCE = -10V f = 50MHz Switching times 65 pF V CB = -10V, f = 1MHz* t ON 110 nS I C = -2A, V CC = -10V, t OFF 460 nS I B1 = I B2 = -200mA * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. ISSUE 1 - DECEMBER 2003 SEMICONDUCTORS 4 ZXT953K TYPICAL CHARACTERISTICS ISSUE 1 - DECEMBER 2003 5 SEMICONDUCTORS ZXT953K PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM Millimeters Inches DIM Millimeters Min Max Inches Min Max Min Max A 2.18 2.38 0.086 0.094 e A1 ᎏ 0.127 0.005 H 9.40 10.41 0.370 0.410 b 0.635 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.762 1.114 0.030 0.045 L1 2.30 BSC 2.74 REF Max 0.090 BSC 0.108 REF b3 5.20 5.46 0.205 0.215 L2 c 0.457 0.609 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.457 0.584 0.018 0.023 L4 0.635 1.01 0.025 0.040 0.245 0.060 D 5.97 6.22 0.235 D1 5.20 ᎏ 0.205 E 6.35 6.73 0.250 E1 4.32 ᎏ 0.170 0.265 0.051 BSC Min 0.020 BSC L5 1.14 1.52 0.045 ⍜1⬚ 0⬚ 10⬚ 0⬚ 10⬚ ⍜⬚ 0⬚ 15⬚ 0⬚ 15⬚ © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - DECEMBER 2003 SEMICONDUCTORS 6