ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE(sat)=0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very efficient performance combining a high current operation, exceptionally low VCE(sat) and high HFE resulting in extremely low on state losses. This dual transistor is ideal for use in a variety of efficient driving functions including motors, lamps, relays and solenoids and will also benefit circuits requiring high output current switching. FEATURES SOT23-6 C2 • Low Saturation Voltage • RCE(sat) values - • hFE min 200 at 1A • IC=1.5A Continuous (NPN), 1.25A (PNP) • SOT23-6 package with PD = 1.1W NPN =135mΩ at 1.5A PNP =150mΩ at 1.25A C1 B1 B2 E1 E2 APPLICATIONS • Various driving functions Lamps Motors Relays and solenoids • High output current switches ORDERING INFORMATION Top View DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXTD6717E6TA 7 8mm embossed 3000 units ZXTD6717E6TC 13 8mm embossed 10000 units DEVICE MARKING 6717 ISSUE 2 - JULY 2001 1 ZXTD6717E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage LIMIT NPN LIMIT PNP UNIT 15 -12 V V CEO 15 -12 V Emitter-Base Voltage V EBO 5 -5 V Peak Pulse Current I CM 5 -3 A Continuous Collector Current IC 1.5 -1.25 A Base Current IB 200 -200 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.6 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 125 °C/W Junction to Ambient (b) R θJA 45 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. ISSUE 2 - JULY 2001 2 ZXTD6717E6 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 15 V I C =100A V (BR)CEO 15 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E =100A Collector Cut-Off Current I CBO 10 nA V CB =10V Emitter Cut-Off Current I EBO 10 nA V EB =4V Collector Emitter Cut-Off Current I CES 10 nA V CES =10V Collector-Emitter Saturation Voltage V CE(sat) 16.5 40 75 150 205 20 55 100 200 245 mV mV mV mV mV I C =100mA, I B =10mA* I C =250mA, I B =10mA* I C =500mA, I B =10mA* I C =1A, I B =10mA* I C =1.5A, I B =20mA* Base-Emitter Saturation Voltage V BE(sat) 0.93 1.1 V I C =1.5A, I B =20mA* Base-Emitter Turn-On Voltage V BE(on) 0.865 1.1 V I C =1.5A, V CE =2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 180 MHz I C =50mA, V CE =10V f=100MHz Output Capacitance C obo 15 pF V CB =10V, f=1MHz Turn-On Time Turn-Off Time t (on) t (off) 50 250 ns ns I C =1A, V CC =10V I B1 =I B2 =100mA 200 300 250 200 75 30 TYP. MAX. I C =10mA, V CE =2V* I C =100mA, V CE =2V* I C =500mA, V CE =2V* I C =1A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* 420 450 390 300 150 75 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 2 - JULY 2001 3 ZXTD6717E6 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage TYP. UNIT CONDITIONS. -12 V I C =-100A V (BR)CEO -12 V I C =-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E =-100A Collector Cut-Off Current I CBO -10 nA V CB =-10V Emitter Cut-Off Current I EBO -10 nA V EB =-4V Collector Emitter Cut-Off Current I CES -10 nA V CES =-10V Collector-Emitter Saturation Voltage V CE(sat) -25 -55 -110 -160 -185 -40 -100 -175 -215 -240 mV mV mV mV mV I C =-100mA, I B =-10mA* I C =-250mA, I B =-10mA* I C =-500mA, I B =-10mA* I C =-1A, I B =-50mA* I C =-1.25A, I B =-100mA* Base-Emitter Saturation Voltage V BE(sat) -0.99 -1.10 V I C =-1.25A, I B =-100mA* Base-Emitter Turn-On Voltage V BE(on) -0.85 -1.0 V I C =-1.25A, V CE =-2V* Static Forward Current Transfer Ratio h FE Transition Frequency fT 220 MHz I C =-50mA, V CE =-10V f=100MHz Output Capacitance C obo 15 pF V CB =-10V, f=1MHz Turn-On Time Turn-Off Time t (on) t (off) 50 135 ns ns I C =-1A, V CC =-10V I B1 =I B2 =-100mA 300 300 200 125 75 30 MAX. I C =-10mA, V CE =-2V* I C =-100mA, V CE =-2V* I C =-500mA, V CE =-2V* I C =-1.25A, V CE =-2V* I C =-2A, V CE =-2V* I C =-3A, V CE =-2V* 490 450 340 250 140 80 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 2 - JULY 2001 4 ZXTD6717E6 NPN TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB =50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0.1 0 -55°C +25°C +100°C +150°C 0.2 1m 10m 100m 1 0 10 10m 1m IC - Collector Current (A) VCE(sat) v IC 800 100m 1 10 IC - Collector Current (A) VCE(sat) v IC V CE =2V IC/IB =50 600 +100°C VBE(sat) - (V) hFE - Typical Gain 1.0 +25°C 400 -55°C 200 0.75 0.5 0 0 1m -55°C +25°C +100°C +150°C 0.25 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 100m 1 10 10 IC - Collector Current (A) 1.0 0.8 VBE(on) - (V) 10m IC - Collector Current (A) VBE(sat) v IC 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 1m 10m 100m 1 1 100m 10m 100m 10 IC - Collector Current (A) VBE(on) v IC DC 1s 100ms 10ms 1ms 100us 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area ISSUE 2 - JULY 2001 5 100 ZXTD6717E6 PNP TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB =50 0.3 IC/IB=10 IC/IB=50 IC/IB=100 VCE(sat) - (V) VCE(sat) - (V) 0.3 0.2 0.1 0 -55°C +25°C +100°C +150°C 0.2 0.1 1m 10m 100m 1 0 10 1m 10m IC - Collector Current (A) VCE(sat) v IC 800 1.0 +100°C 400 +25°C 200 -55°C 0 0.6 -55°C +25°C +100°C +150°C 0.4 0 10m 100m 1 10 1m IC - Collector Current (A) hFE v IC 100m 1 10 10 IC - Collector Current (A) 0.8 VBE(on) - (V) 10m IC - Collector Current (A) VBE(sat) v IC 1.0 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 10 IC/IB =50 0.2 1m 1 0.8 VBE(sat) - (V) hFE - Typical Gain V CE =2V 600 100m IC - Collector Current (A) VCE(sat) v IC 1m 10m 100m 1 1 100m 10m 100m 10 IC - Collector Current (A) VBE(on) v IC DC 1s 100ms 10ms 1ms 100µs 1 100 10 VCE - Collector Emitter Voltage (V) Safe Operating Area ISSUE 2 - JULY 2001 6 ZXTD6717E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide © Zetex plc 2001 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 2 - JULY 2001 7