ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC(cont) = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high voltage blocking. The SOT23F package is pin compatible with the industry standard SOT23 foot print but offers lower profile and higher dissipation for applications where power density is of utmost importance. B Features E • High voltage • Low saturation voltage • Low profile small outline package E Applications C • Modems • Telecoms line switching B Pinout - top view Ordering information Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 ZXTN08400BFFTA Device marking 1D5 Issue 1 - September 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN08400BFF Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 450 V Collector-emitter voltage (forward blocking) VCEX 450 V Collector-emitter voltage VCEO 400 V Emitter-collector voltage (reverse blocking) VECO 6 V Emitter-base voltage VEBO 7 V IC 0.5 A ICM 1 A Base current IB 0.2 A Power dissipation at Tamb =25°C(a) PD 0.84 W 6.72 mW/°C 1.34 W 10.72 mW/°C 1.5 W 12.0 mW/°C 2.0 W 16.0 mW/°C Tj, Tstg - 55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 149 °C/W Junction to ambient(b) R⍜JA 93 °C/W Junction to ambient(c) R⍜JA 83 °C/W Junction to ambient(d) R⍜JA 60 °C/W Continuous collector current(c) Peak pulse current Linear derating factor PD Power dissipation at Tamb =25°C(b) Linear derating factor PD Power dissipation at Tamb =25°C(c) Linear derating factor Power dissipation at Tamb PD =25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN08400BFF Typical characteristics Issue 1 - September 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN08400BFF Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 450 550 V IC = 100A Collector-emitter breakdown voltage (forward blocking) BVCEX 450 550 V IC = 100A, RBE < 1k⍀ or -1V < VBE < 0.25V Collector-emitter breakdown voltage (base open) BVCEO 400 500 V IC = 10mA(*) Emitter-collector breakdown voltage (reverse blocking) BVECX 6 8.0 V IE = 100A, RBC < 1k⍀ or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 6 8.5 V IE = 100A, Emitter-base breakdown voltage BVEBO 7 8.1 V IE = 100A Collector-base cut-off current ICBO <1 50 20 nA A VCB = 360V VCB = 360V, Tamb= 100°C Collector-emitter cut-off current ICEX <1 100 nA VCE = 360V, RBE < 1k⍀ or -1V < VBE < 0.25V Emitter-base cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 70 85 mV IC = 20mA, IB = 1mA (*) 50 70 mV IC = 50mA, IB = 5mA(*) 120 170 mV IC = 300mA, IB = 30mA(*) 125 175 mV IC = 500mA, IB = 100mA(*) Base-emitter saturation voltage VBE(sat) 865 950 mV IC = 500mA, IB = 100mA(*) Base-emitter turn-on voltage 800 900 mV IC = 500mA, VCE = 10V(*) VBE(on) Static forward current transfer hFE ratio 90 165 100 180 10 20 Transition frequency fT 40 Output capacitance COBO 8 Delay time td Rise time Max. Unit Conditions IC = 1mA, VCE = 5V(*) 300 IC = 50mA, VCE = 5V(*) IC = 500mA, VCE = 10V(*) MHz IC = 10mA, VCE = 20V f = 20MHz 10 pF VCB = 20V, f = 1MHz(*) 100 ns tr 52 ns Storage time ts 3122 ns VCC = 100V. IC = 100mA, IB1 = 10mA, IB2= 20mA. Fall time tf 240 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN08400BFF Typical characteristics Issue 1 - September 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN08400BFF Package outline - SOT23F c D b e1 b e L1 L E E1 b E2 A1 R A Dim. Millimeters Inches Min. Max. Min. Max. A 0.80 1.00 0.0315 0.0394 A1 0.00 0.10 0.00 b 0.35 0.45 c 0.10 D 2.80 e e1 Millimeters Inches Min. Max. Max. Max. E 2.30 2.50 0.0906 0.0984 0.0043 E1 1.50 1.70 0.0590 0.0669 0.0153 0.0161 E2 1.10 1.26 0.0433 0.0496 0.20 0.0043 0.0079 L 0.48 0.68 0.0189 0.0268 3.00 0.1102 0.1181 L1 0.30 0.50 0.0153 0.0161 R 0.05 0.15 0.0019 0.0059 O 0° 12° 0° 12° 0.95 ref 1.80 Dim. 2.00 0.0374 ref 0.0709 0.0787 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - September 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com