DIODES ZXTN19020CFF

ZXTN19020CFF
20V, SOT23F, NPN high gain power transistor
Summary
BVCEX > 65V
BVCEO > 20V
BVECO > 4.5V
IC(cont) = 7A
VCE(sat) < 30mV @ 1A
RCE(sat) = 18m⍀
PD = 1.5W
Complementary part number ZXTP19020CFF
C
Description
Advanced process capability has been used to maximize the performance
of this transistor. The SOT23F package is compatible with the industry
standard SOT23 footprint but offers lower profile and higher dissipation
for applications where power density is of utmost importance.
B
E
Features
•
Very low saturation voltage
•
High gain
•
High forward blocking voltage
•
Low profile high dissipation package
E
C
Applications
•
MOSFET and IGBT gate driving
•
LED driving
•
Strobe flash
•
Motor drive
•
Micro buffers
B
Pinout - top view
Ordering information
Device
ZXTN19020CFFTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3000
Device marking
1E2
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ZXTN19020CFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
65
V
Collector-emitter voltage (forward blocking)
VCEX
65
V
Collector-emitter voltage (base open)
VCEO
20
V
Emitter-collector voltage (reverse blocking)
VECO
4.5
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(c)
IC
7
A
Base current
IB
1
A
Peak pulse current
ICM
15
A
Power dissipation at Tamb =25°C(a)
PD
0.84
W
6.72
mW/°C
1.34
W
10.72
mW/°C
1.5
W
12.0
mW/°C
2.0
W
16.0
mW/°C
Tj, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
149.3
°C/W
Junction to ambient(b)
R⍜JA
93.4
°C/W
Junction to ambient(c)
R⍜JA
83.3
°C/W
Junction to ambient(d)
R⍜JA
60
°C/W
Linear derating factor
PD
Power dissipation at Tamb =25°C(b)
Linear derating factor
PD
Power dissipation at Tamb =25°C(c)
Linear derating factor
Power dissipation at Tamb
PD
=25°C(d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
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ZXTN19020CFF
Characteristics
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ZXTN19020CFF
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown voltage BVCBO
65
85
V
IC = 100␮A
Collector-emitter breakdown
voltage (forward blocking)
BVCEX
65
85
V
IC = 100␮A, RBE < 1k⍀ or
-1V < VBE < 0.25V
Collector-emitter breakdown
voltage (base open)
BVCEO
20
25
V
IC = 10mA (*)
Emitter-base breakdown voltage
BVEBO
7
8.3
V
IE = 100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
6
8.2
V
IE = 100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
4.5
5.3
V
IE = 100␮A,
Collector-base cut-off current
ICBO
<1
50
20
nA
␮A
VCB = 50V
VCB = 50V, Tamb= 100°C
Collector-base cut-off current
ICEX
<1
100
nA
VCE = 50V, RBE < 1k⍀ or
-1V < VBE < 0.25V
Emitter-base cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat)
23
30
mV
IC = 1A, IB = 100mA(*)
45
65
mV
IC = 1A, IB = 10mA(*)
55
70
mV
IC = 2A, IB = 40mA(*)
135
175
mV
IC = 7A, IB = 280mA(*)
Base-emitter saturation voltage VBE(sat)
960
1050
mV
IC = 7A, IB = 280mA(*)
Base-emitter turn-on voltage
VBE(on)
840
950
mV
IC = 7A, VCE = 2V(*)
Static forward current transfer
ratio
hFE
200
350
500
180
340
IC = 2A, VCE = 2V(*)
100
220
IC = 7A, VCE = 2V(*)
45
95
IC = 15A, VCE = 2V(*)
Transition frequency
fT
150
Input capacitance
Cibo
315
Output capacitance
Cobo
40
Delay time
td
Rise time
Max.
Unit Conditions
IC = 0.1A, VCE = 2V(*)
MHz IC = 50mA, VCE = 10V
f =50MHz
pF
VEB = 0.5V, f = 1MHz(*)
pF
VCB = 10V, f = 1MHz(*)
135
ns
tr
117
ns
Storage time
ts
285
ns
VCC =10 V.
IC =1A,
IB1 = IB2=10mA.
Fall time
tf
88
ns
50
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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ZXTN19020CFF
Typical characteristics
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ZXTN19020CFF
Intentionally left blank
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ZXTN19020CFF
Package outline - SOT23F
c
D
b
e1
b
e
L1
L
E
E1
b
E2
A1
R
A
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.80
1.00
0.0315
0.0394
A1
0.00
0.10
0.00
b
0.35
0.45
c
0.10
D
2.80
e
e1
Millimeters
Inches
Min.
Max.
Max.
Max.
E
2.30
2.50
0.0906
0.0984
0.0043
E1
1.50
1.70
0.0590
0.0669
0.0153
0.0161
E2
1.10
1.26
0.0433
0.0496
0.20
0.0043
0.0079
L
0.48
0.68
0.0189
0.0268
3.00
0.1102
0.1181
L1
0.30
0.50
0.0153
0.0161
R
0.05
0.15
0.0019
0.0059
O
0°
12°
0°
12°
0.95 ref
1.80
Dim.
2.00
0.0374 ref
0.0709
0.0787
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTN19020CFF
Definitions
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
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Production has been discontinued
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
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© 2007 Published by Zetex Semiconductors plc
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