ZXTN2005G 25V NPN LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 25V : RSAT = 30m ; IC = 7A DESCRIPTION Packaged in the SOT223 outline this new low saturation 25V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extemely low equivalent on-resistance; RSAT = 30m at 6.5A SOT223 • 7 amps continuous current • Up to 20 amps peak current • Very low saturation voltages • Excellent hFE characteristics up to 20 amps APPLICATIONS • DC - DC converters • MOSFET gate drivers • Charging circuits • Power switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXTN2005GTA 7” 13” 12mm embossed 1,000 units ZXTN2005GTC 4,000 units DEVICE MARKING TOP VIEW ZXTN 2005 ISSUE 3 - MAY 2006 1 SEMICONDUCTORS ZXTN2005G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO 60 V Collector-emitter voltage BV CEO 25 V Emitter-base voltage BV EBO 7 V A Continuous collector current IC 7 Peak pulse current I CM 20 A Power dissipation at T A =25°C (a) PD 3.0 W Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor 24 mW/°C PD 1.6 W 12.8 mW/°C Operating and storage temperature range T j , T stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) Junction to ambient (b) VALUE UNIT R ⍜JA 42 °C/W R ⍜JA 78 °C/W NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 3 - MAY 2006 SEMICONDUCTORS 2 ZXTN2005G CHARACTERISTICS ISSUE 3 - MAY 2006 3 SEMICONDUCTORS ZXTN2005G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Collector-base breakdown voltage BV CBO 60 120 V I C =100A Collector-emitter breakdown voltage BV CER 60 120 V I C =1A, RBⱕ1k⍀ Collector-emitter breakdown voltage BV CEO 25 35 V I C =10mA* Emitter-base breakdown voltage BV EBO 7 8.1 V I E =100A Collector cut-off current I CBO 50 nA V CB =50V 0.5 A VCB=50V, Tamb=100⬚C Collector cut-off current I CER 100 nA V CB =50V Rⱕ1k⍀ 0.5 A VCB=50V, Tamb=100⬚C V EB =6V Emitter cut-off current I EBO Collector-emitter saturation voltage V CE(SAT) Base-emitter saturation voltage V BE(SAT) Base-emitter turn-on voltage V BE(ON) Static forward current transfer ratio h FE Transition frequency 10 nA 28 40 mV I C =500mA, I B =10mA* 35 50 mV IC=1A, IB=100mA* 55 75 mV IC=1A, IB=10mA* 115 140 mV IC=2A, IB=10mA* 195 230 mV IC=6.5A, IB=150mA* 980 1080 mV I C =6.5A, I B =150mA* 890 980 mV 300 400 I C =6.5A, V CE =1V* I C =10mA, V CE =1V* 300 450 IC=1A, VCE=1V* 200 275 IC=7A, VCE=1V* 40 55 IC=20A, VCE=1V* 150 fT I C =100mA, VCE =10V f=50MHz Output capacitance C OBO 48 pF V CB =10V, f=1MHz* Switching times t ON 33 ns t OFF 464 I C =1A, V CC =10V, I B1 =-I B2 =100mA * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2%. ISSUE 3 - MAY 2006 SEMICONDUCTORS 4 ZXTN2005G TYPICAL CHARACTERISTICS ISSUE 3 - MAY 2006 5 SEMICONDUCTORS ZXTN2005G PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - D 6.30 6.70 0.248 0.264 - - - - - © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 3 - MAY 2006 SEMICONDUCTORS 6