DIODES ZXTN2005ZTA

ZXTN2005Z
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BVCEO = 25V : RSAT = 25m ; IC = 5.5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 25V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
• Extremely low equivalent on-resistance; RSAT = 25m at 6.5A
SOT89
• 5.5 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 20 amps
APPLICATIONS
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC modules
• Backlight Inverters
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
7"
12mm
embossed
1,000 units
ZXTN2005ZTA
DEVICE MARKING
869
TOP VIEW
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SEMICONDUCTORS
ZXTN2005Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
(a)
LIMIT
UNIT
BV CBO
60
V
BV CEO
25
V
BV EBO
7
V
5.5
A
IC
Peak pulse current
I CM
20
A
Power dissipation at T A =25°C (a)
Linear derating factor
PD
1.5
W
12
mW/°C
(b)
PD
Power dissipation at T A =25°C
Linear derating factor
Operating and storage temperature range
T j , T stg
2.1
W
16.8
mW/°C
-55 to +150
°C
LIMIT
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
R ␪JA
83
°C/W
Junction to ambient (b)
R ␪JA
60
°C/W
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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SEMICONDUCTORS
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ZXTN2005Z
CHARACTERISTICS
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SEMICONDUCTORS
ZXTN2005Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
60
120
MAX. UNIT CONDITIONS
V
I C = 100␮A
Collector-emitter breakdown voltage
BV CER
60
120
V
I C = 1␮A, RB ⱕ 1k⍀
Collector-emitter breakdown voltage
BV CEO
25
35
V
I C = 10mA*
Emitter base breakdown voltage
BV EBO
7.0
8.1
V
I E = 100␮A
Collector cut-off current
I CBO
20
nA
VCB = 50V
0.5
␮A
I CER
20
nA
VCB = 50V, Tamb=100⬚C
V CB = 50V
Rⱕ1k⍀
0.5
␮A
VCB = 50V, Tamb=100⬚C
Emitter cut-off current
I EBO
10
nA
V EB = 6V
Collector-emitter saturation voltage
V CE(SAT)
25
35
mV
I C = 500mA, I B = 10mA*
30
45
mV
45
70
mV
I C = 1A, I B = 100mA*
I C = 1A, I B = 10mA*
105
130
mV
Collector cut-off current
I C = 2A, I B = 10mA*
I C = 6.5A, I B = 150mA*
160
200
mV
Base-emitter saturation voltage
V BE(SAT)
950
1050
mV
I C = 6.5A, I B = 150mA*
Base-emitter turn on voltage
V BE(ON)
860
960
mV
Static forward current transfer ratio
h FE
I C = 6.5A, V CE = 1V*
I C = 10mA, V CE = 1V*
300
400
300
450
I C = 1A, V CE = 1V*
275
I C = 7A, V CE = 1V*
I C = 20A, V CE = 1V*
200
40
Transition frequency
55
150
fT
I C = 100mA, V CE = 10V
f=50MHz
Output capacitance
C OBO
48
pF
V CB = 10V, f= 1MHz*
Switching times
t ON
33
ns
t OFF
464
I C = 1A, V CC = 10V,
I B1 = -I B2 = 100mA
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
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SEMICONDUCTORS
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ZXTN2005Z
TYPICAL CHARACTERISTICS
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SEMICONDUCTORS
ZXTN2005Z
PACKAGE OUTLINE
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
e
1.40
1.50
0.055
0.059
b
0.38
0.48
0.015
0.019
E
3.75
4.25
0.150
0.167
b1
-
0.53
-
0.021
E1
-
2.60
-
0.102
b2
1.50
1.80
0.060
0.071
G
2.90
3.00
0.114
0.118
c
0.28
0.44
0.011
0.017
H
2.60
2.85
0.102
0.112
D
4.40
4.60
0.173
0.181
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 2 - JUNE 2005
SEMICONDUCTORS
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