ZXTN25020CFH 20V, SOT23, NPN medium power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 5V IC(cont) = 4.5A VCE(sat) < 45 mV @ 1A RCE(sat) = 28 m⍀ PD = 1.25W Complementary part number ZXTP25020CFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • High peak current • High gain • Low saturation voltage • 70V forward blocking voltage • 5V reverse blocking voltage E E Applications • MOSFET gate drivers • Power switches • Motor control • DC fans • DC-DC converters C B Pinout - top view Ordering information Device ZXTN25020CFHTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 Device marking 1B3 Issue 1 - June 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25020CFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 70 V Collector-emitter voltage (forward blocking) VCEX 70 V Collector-emitter voltage VCEO 20 V Emitter-collector voltage (reverse blocking) VECO 5 V Emitter-base voltage VEBO 7 V Continuous collector current(c) IC 4.5 A Base current IB 1 A Peak pulse current ICM 10 A Power dissipation at Tamb =25°C(a) PD 0.73 W 5.84 mW/°C 1.05 W 8.4 mW/°C 1.25 W 9.6 mW/°C 1.81 W 14.5 mW/°C Tj, Tstg - 55 to 150 °C Symbol Limit Unit Junction to ambient(a) R⍜JA 171 °C/W Junction to ambient(b) R⍜JA 119 °C/W Junction to ambient(c) R⍜JA 100 °C/W Junction to ambient(d) R⍜JA 69 °C/W Linear derating factor PD Power dissipation at Tamb =25°C(b) Linear derating factor PD Power dissipation at Tamb =25°C(c) Linear derating factor PD Power dissipation at Tamb =25°C(d) Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - June 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25020CFH Characteristics Issue 1 - June 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25020CFH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 70 100 Collector-emitter breakdown BVCEX voltage (forward blocking) 70 100 Collector-emitter breakdown BVCEO voltage (base open) 20 35 V IC = 10mA (*) Emitter-base breakdown voltage BVEBO 7 8.3 V IE = 100A Emitter-collector breakdown voltage (reverse blocking) BVECX 6 8.0 V IE = 100A, RBC ⱕ 1k⍀ or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 5 6.6 V IE = 100A, Collector-base cut-off current ICBO Max. Unit Conditions V IC = 100A IC = 100A, RBE ⱕ 1k⍀ or -1V < VBE < 0.25V <1 50 20 nA A VCB = 56V VCB = 56V, Tamb= 100°C Collector-emitter cut-off current ICEX - 100 nA VCE = 56V; RBE ⱕ 1k⍀ or -1V < VBE < 0.25V Emitter-base cut-off current IEBO <1 50 nA VEB = 5.6V Collector-emitter saturation voltage VCE(sat) 35 45 mV IC = 1A, IB = 100mA(*) 53 65 mV IC = 1A, IB = 20mA(*) 85 100 mV IC = 2A, IB = 40mA(*) 175 220 mV IC = 4.5A, IB = 90mA(*) 125 140 mV IC = 4.5A, IB = 450mA(*) VBE(sat) 905 1000 mV IC = 4.5A, IB = 90mA(*) Base-emitter turn-on voltage VBE(on) 815 900 mV IC = 4.5A, VCE = 2V(*) 200 350 500 180 320 IC = 1A, VCE = 2V(*) 90 145 IC = 4.5A, VCE = 2V(*) 25 40 IC = 10A, VCE = 2V(*) Base-emitter saturation voltage Static forward current transfer ratio hFE Transition frequency fT 185 Output capacitance COBO 16.8 Delay time td Rise time IC = 10mA, VCE = 2V(*) MHz IC = 50mA, VCE = 10V f = 100MHz 25 pF VCB = 10V, f = 1MHz(*) 70.5 ns tr 88 ns Storage time ts 266 ns VCC = 10V. IC = 1A, IB1 = IB2= 10mA. Fall time tf 65 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 1 - June 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25020CFH Typical characteristics Issue 1 - June 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25020CFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - June 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com