ZXTN25060BFH 60V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC(cont) = 3.5A VCE(sat) < 65 mV @ 1A RCE(sat) = 43 m⍀ PD = 1.25W Complementary part number ZXTP25060BFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • High peak current • Low saturation voltage • 150V forward blocking voltage E E Applications C • Lamp, relay and solenoid drivers • General switching in automotive and industrial applications • Motor drive and control B Pinout - top view Ordering information Device ZXTN25060BFHTA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 Device marking 019 Issue 1 - March 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN25060BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO 150 V Collector-emitter voltage (forward blocking) VCEX 150 V Collector-emitter voltage VCEO 60 V Emitter-collector voltage (reverse blocking) VECO 6 V Emitter-base voltage VEBO 7 V IC 3.5 A Peak pulse current ICM 10 A Power dissipation at TA =25°C (a) Linear derating factor PD 0.73 W 5.84 mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 1.05 W 8.4 mW/°C Power dissipation at TA =25°C (c) Linear derating factor PD 1.25 W 9.6 mW/°C Power dissipation at TA =25°C (d) Linear derating factor PD 1.81 W 14.5 mW/°C Tj, Tstg - 55 to 150 °C Symbol Limit Unit Junction to ambient (a) R⍜JA 171 °C/W Junction to ambient (b) R⍜JA 119 °C/W Junction to ambient (c) R⍜JA 100 °C/W Junction to ambient (d) R⍜JA 69 °C/W Continuous collector current (b) Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN25060BFH Characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN25060BFH ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Collector-base breakdown voltage BVCBO 150 190 Collector-emitter breakdown voltage (forward blocking) BVCEX 150 190 Collector-emitter breakdown voltage (base open) BVCEO 60 80 V IC = 10mA (*) Emitter-collector BVECX breakdown voltage (reverse blocking) 6 8 V IE = 100A, RBC ⱕ 1k⍀ or 0.25V > VBC > -0.25V Emitter-collector breakdown voltage (base open) BVECO 6 7 V IE = 100A, Emitter-base breakdown voltage BVEBO 7 8 V IE = 100A Collector cut-off current ICBO <1 50 20 nA A VCB = 120V VCB = 120V, Tamb= 100°C Collector-emitter cut-off current ICEX - 100 nA VCE = 120V; RBE ⱕ 1k⍀ or -1V < VBE < 0.25V Emitter cut-off current IEBO <1 50 nA VEB = 5.6V 33 40 mV IC = 0,5A, IB = 50mA (*) 73 95 mV IC = 0,5A, IB = 10mA (*) 50 65 mV IC = 1A, IB = 100mA (*) 150 175 mV IC = 3.5A, IB = 350mA (*) Collector-emitter saturation VCE(sat) voltage Max. Unit Conditions V IC = 100A IC = 100A, RBE ⱕ 1k⍀ or -1V < VBE < 0.25V Base-emitter saturation voltage VBE(sat) 960 1050 mV IC = 3.5A, IB = 350mA (*) Base-emitter turn-on voltage VBE(on) 865 950 mV IC = 3.5A, VCE = 2V (*) Static forward current transfer ratio hFE 100 200 300 90 180 IC = 1A, VCE = 2V (*) 25 40 IC = 3.5A, VCE = 2V (*) Transition frequency fT 185 Output capacitance COBO 11.5 Turn-on time t(on) Turn-off time t(off) IC = 10mA, VCE = 2V (*) MHz IC = 100mA, VCE = 5V f = 100MHz pF VCB = 10V, f = 1MHz (*) 34 ns 566 ns VCC = 10V. IC = 500mA, IB1 = IB2= 50mA. 20 NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN25060BFH Typical characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN25060BFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com