DIODES ZXTN25060BFH

ZXTN25060BFH
60V, SOT23, NPN medium power transistor
Summary
BVCEX > 150V
BVCEO > 60V
BVECO > 6V
IC(cont) = 3.5A
VCE(sat) < 65 mV @ 1A
RCE(sat) = 43 m⍀
PD = 1.25W
Complementary part number ZXTP25060BFH
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT23 package
•
High peak current
•
Low saturation voltage
•
150V forward blocking voltage
E
E
Applications
C
•
Lamp, relay and solenoid drivers
•
General switching in automotive and industrial applications
•
Motor drive and control
B
Pinout - top view
Ordering information
Device
ZXTN25060BFHTA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
Device marking
019
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ZXTN25060BFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage (forward blocking)
VCEX
150
V
Collector-emitter voltage
VCEO
60
V
Emitter-collector voltage (reverse blocking)
VECO
6
V
Emitter-base voltage
VEBO
7
V
IC
3.5
A
Peak pulse current
ICM
10
A
Power dissipation at TA =25°C (a)
Linear derating factor
PD
0.73
W
5.84
mW/°C
Power dissipation at TA =25°C (b)
Linear derating factor
PD
1.05
W
8.4
mW/°C
Power dissipation at TA =25°C (c)
Linear derating factor
PD
1.25
W
9.6
mW/°C
Power dissipation at TA =25°C (d)
Linear derating factor
PD
1.81
W
14.5
mW/°C
Tj, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
Junction to ambient (a)
R⍜JA
171
°C/W
Junction to ambient (b)
R⍜JA
119
°C/W
Junction to ambient (c)
R⍜JA
100
°C/W
Junction to ambient (d)
R⍜JA
69
°C/W
Continuous collector current (b)
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - March 2006
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ZXTN25060BFH
Characteristics
Issue 1 - March 2006
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ZXTN25060BFH
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
150
190
Collector-emitter breakdown
voltage (forward blocking)
BVCEX
150
190
Collector-emitter breakdown
voltage (base open)
BVCEO
60
80
V
IC = 10mA (*)
Emitter-collector
BVECX
breakdown voltage (reverse
blocking)
6
8
V
IE = 100␮A, RBC ⱕ 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector
breakdown voltage (base
open)
BVECO
6
7
V
IE = 100␮A,
Emitter-base breakdown
voltage
BVEBO
7
8
V
IE = 100␮A
Collector cut-off current
ICBO
<1
50
20
nA
␮A
VCB = 120V
VCB = 120V, Tamb= 100°C
Collector-emitter cut-off
current
ICEX
-
100
nA
VCE = 120V; RBE ⱕ 1k⍀ or
-1V < VBE < 0.25V
Emitter cut-off current
IEBO
<1
50
nA
VEB = 5.6V
33
40
mV
IC = 0,5A, IB = 50mA (*)
73
95
mV
IC = 0,5A, IB = 10mA (*)
50
65
mV
IC = 1A, IB = 100mA (*)
150
175
mV
IC = 3.5A, IB = 350mA (*)
Collector-emitter saturation VCE(sat)
voltage
Max.
Unit
Conditions
V
IC = 100␮A
IC = 100␮A, RBE ⱕ 1k⍀ or
-1V < VBE < 0.25V
Base-emitter saturation
voltage
VBE(sat)
960
1050
mV
IC = 3.5A, IB = 350mA (*)
Base-emitter turn-on
voltage
VBE(on)
865
950
mV
IC = 3.5A, VCE = 2V (*)
Static forward current
transfer ratio
hFE
100
200
300
90
180
IC = 1A, VCE = 2V (*)
25
40
IC = 3.5A, VCE = 2V (*)
Transition frequency
fT
185
Output capacitance
COBO
11.5
Turn-on time
t(on)
Turn-off time
t(off)
IC = 10mA, VCE = 2V (*)
MHz
IC = 100mA, VCE = 5V
f = 100MHz
pF
VCB = 10V, f = 1MHz (*)
34
ns
566
ns
VCC = 10V. IC = 500mA,
IB1 = IB2= 50mA.
20
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
Issue 1 - March 2006
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ZXTN25060BFH
Typical characteristics
Issue 1 - March 2006
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ZXTN25060BFH
Package outline - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
Dim.
F
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 NOM
-
-
1.90 NOM
0.075 NOM
0.0375 NOM
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Streitfeldstraße 19
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Germany
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USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
[email protected]
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com