FCX555 180V High voltage PNP switching transistor in SOT89 Summary BVCEV > -180V Description Packaged in the SOT89 outline this new high gain medium power PNP transistor offers 180V forward blocking capability making it ideal for use in VOIC and various driving and power management functions. Features • 180 volts forward blocking Applications • Voice over internet protocol (VOIC) • MOSFET gate drivers • Power switches • Motor control Ordering information Device FCX555TA Reel size Tape width Quantity per reel 7” 12mm embossed 1,000 Pin out - top view Device marking 555 Issue 1 - November 2005 © Zetex Semiconductors plc 2005 1 www.zetex.com FCX555 Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEV -180 V Emitter-base voltage VEBO -7 V Continuous collector current(a) IC -0.7 A Peak pulse current ICM -2 A Power dissipation at TA =25°C(a) Linear derating factor PD 1.5 W 12 mW/°C Power dissipation at TA =25°C(b) Linear derating factor PD 2.1 W 16.8 mW/°C Operating and storage temperature range Tj:Tstg -55 to +150 °C Value Unit 83 °C/W Thermal resistance Parameter Symbol Junction to ambient(a) RθJA NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - November 2005 © Zetex Semiconductors plc 2005 2 www.zetex.com FCX555 Electrical characteristics Parameter Symbol Min. Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Unit Conditions -180 V IC = -100µA BVCEV -180 V IC = -1µA, -0.3V < VBE < 1V Collector-emitter breakdown voltage BVCER -180 V IC = -1µA, RBⱕ1k⍀ Emitter-base breakdown voltage BVEBO -7 V IE= -100µA Collector-emitter breakdown voltage BVCEO -150 V IC =-10mA(*) Collector cut-off current ICBO -20 nA VCB = -144V -10 µA VCB = -144V, TAMB = 100°C -20 nA VEB = -6V -300 mV IC = -0.1A, IB = -10mA(*) -400 mV IC = -0.25A, IB = -25mA(*) Emitter cut-off current IEBO Collector emitter saturation voltage VCE(SAT) Typ. Max. -8.1 <1 <1 Base-emitter saturation voltage VBE(SAT) -1000 mV IC =-250mA, IB =-25mA(*) Base-emitter turn-on voltage VBE(ON) -950 mV IC =-250mA, VCE =-5V(*) Static forward current transfer ratio hFE 100 IC = -10mA, VCE = -5V(*) 100 Transition frequency fT Output capacitance COBO 300 100 10 IC = -100mA, VCE = -5V(*) MHz Ic = -50mA, VCE = -10V, f = 100MHZ pF VCB 1= -10V, f = 1MHZ(*) NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300µs; duty cycle ⱕ2%. Issue 1 - November 2005 © Zetex Semiconductors plc 2005 3 www.zetex.com FCX555 Typical characteristics ZTX554/ 55-2 IB1=IB2=IC/10 -0.8 tr ts ns µ s -0.6 500 Switching time VCE(sat) - (Volts) IC/IB=10 -0.4 -0.2 400 4 3 200 2 -0.0001 -0.001 -0.01 -0.1 0 -1 IC - Collector Current (Amps) 400 100 200 1 0 -0.01 tr 0 -0.1 50 0 -1 Switching Speeds 100 -1.4 80 -1.2 VCE=-10V VBE(sat) - (Volts) hFE - Normalised Gain (%) 600 td ns IC - Collector Current (Amps) VCE(sat) v IC 60 800 tf td 100 0 5 300 tf ns 1000 ts 40 20 IC/IB=10 -1.0 -0.8 -0.6 0 -0.0001 -0.001 -0.01 -0.1 -0.0001 1 -0.001 -0.01 -0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC -1 -1.4 VBE - (Volts) -1.2 VCE=-10V -1.0 -0.8 -0.6 -0.0001 -0.001 -0.01 -0.1 -1 IC - Collector Current (Amps) VBE(on) v IC Issue 1 - November 2005 © Zetex Semiconductors plc 2005 4 www.zetex.com FCX555 Intentionally left blank Issue 1 - November 2005 © Zetex Semiconductors plc 2005 5 www.zetex.com FCX555 SOT89 Packaging details D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 E1 2.13 2.29 0.084 0.090 B 0.44 0.56 0.017 0.022 e 1.50 BSC 0.059 BSC B1 0.36 0.48 0.014 0.019 e1 3.00 BSC 0.118 BSC C 0.35 0.44 0.014 0.019 H 3.94 4.25 0.155 0.167 D 4.40 4.60 0.173 0.181 L 0.89 1.20 0.155 0.167 E 2.29 2.60 0.090 0.102 - - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - November 2005 © Zetex Semiconductors plc 2005 6 www.zetex.com