DIODES ZXTP19100CFF

ZXTP19100CFF
100V, SOT23F, PNP medium power transistor
Summary
BVCEO > -100V
BVECO > -7V
IC(cont) = -2A
VCE(sat) < 120mV @ 1A
RCE(sat) = 95m⍀
PD = 1.5W
Complementary part number: ZXTN19100CFF
Description
C
Packaged in the SOT23 outline this new low saturation 100V PNP
transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
B
Features
•
2 amps continuous current
•
Very low saturation voltages
E
Applications
E
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC-DC modules
•
Backlight inverters
•
Power switches
•
MOSFET gate drivers
C
B
Top view
Ordering information
DEVICE
ZXTP19100CFFTA
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
7
8
3000
Device marking
1E1
Issue 1 - October 2007
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ZXTP19100CFF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-110
V
Collector-emitter voltage (forward blocking)
VCEX
-110
V
Collector-emitter voltage
VCEO
-100
V
Emitter-collector voltage (reverse blocking)
VECO
-7
V
Emitter-base voltage
VEBO
-7
V
IC
-2
A
ICM
-3
A
Base current
IB
-1
A
Power dissipation at TA =25°C(a)
Linear derating factor
PD
0.84
W
mW/°C
Power dissipation at TA =25°C(b)
Linear derating factor
PD
1.34
W
mW/°C
Power dissipation at TA =25°C(c)
Linear derating factor
PD
1.5
W
mW/°C
Power dissipation at TA =25°C(d)
Linear derating factor
PD
2
W
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Value
Unit
Junction to Ambient(a)
R␪JA
149.3
°C/W
Junction to Ambient(b)
R␪JA
93.4
°C/W
Junction to Ambient(c)
R␪JA
83.3
°C/W
Junction to Ambient(d)
R␪JA
60
°C/W
Junction to Case(e)
R␪JC
38
°C/W
Continuous collector current(c)
Peak pulse current
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs
(e) Junction to Case from Collector Tab.
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ZXTP19100CFF
Thermal characteristics
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ZXTP19100CFF
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Symbol
Min.
Typ.
Collector-Base Breakdown BVCBO
Voltage
-110
Collector-Emitter
Breakdown Voltage (Base
open)
BVCEX
Collector-Emitter
Breakdown Voltage (Base
open)
Max.
Unit
Conditions
-135
V
IC = -100␮A
-110
-135
V
IC = -100␮A, RBC < 1kΩ or
0.25V > VBC > -0.25V
BVCEO
-100
-135
V
IC = -10mA (*)
Emitter-Base Breakdown
Voltage
BVEBO
-7
-8.3
V
IE = -100␮A
Emitter-Collector
Breakdown Voltage
(Reverse Blocking)
BVECX
-7
-8.3
V
IE = -100␮A, RBC < 1k⑁ or
0.25V > VBC > -0.25V
Emitter-Collector
Breakdown Voltage (Base
open)
BVECO
-7
-8.7
V
IE = -100␮A
Collector-Base Cut-Off
Current
ICBO
<-1
-50
-0.5
nA
␮A
VCB = -110V
VCB = -110V, Tamb= 100°C
Emitter-Base Cut-Off
Current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-Emitter
Saturation Voltage
VCE(sat)
-100
-130
mV
IC = -0.5A, IB = -20mA(*)
-95
-120
mV
IC = -1A, IB = -100mA(*)
-175
-225
mV
IC = -1A, IB = -50mA(*)
-215
-275
mV
IC = -2A, IB = -200mA(*)
Base-Emitter Saturation
Voltage
VBE(sat)
-870
-950
mV
IC = -2A, IB = -200mA(*)
Base-Emitter Turn-On
Voltage
VBE(on)
-810
-900
mV
IC = -2A, VCE = -2V(*)
Static Forward Current
Transfer Ratio
hFE
200
330
500
70
135
IC = -1A, VCE = -2V(*)
20
30
IC = -2A, VCE = -2V(*)
Transition Frequency
fT
142
Input Capacitance
Cibo
291
Output Capacitance
Cobo
Delay Time
IC = -100mA, VCE = -2V(*)
MHz
IC = -100mA, VCE = -10V
f = 50MHz
pF
VEB = -0.5V, f = 1MHz(*)
23.5
pF
VCB = -10V, f = 1MHz(*)
td
24.7
ns
Rise Time
tr
22.4
ns
Storage Time
ts
660
ns
Fall Time
tf
107
ns
400
IC = -500mA, VCC = -10V
IB1 = -IB2= -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300␮s; duty cycle ≤ 2%.
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ZXTP19100CFF
Typical characteristics
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ZXTP19100CFF
Package outline - SOT23F
c
D
b
e1
b
e
L1
L
E
E1
b
A1
R
A
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.80
1.00
0.0315
0.0394
A1
0.00
0.10
0.00
b
0.35
0.45
c
0.10
D
2.80
e
e1
Millimeters
Inches
Min.
Max.
Min.
Max.
E
2.30
2.50
0.0906
0.0984
0.0043
E1
1.50
1.70
0.0590
0.0669
0.0153
0.0161
L
0.48
0.68
0.0189
0.0268
0.20
0.0043
0.0079
L1
0.30
0.50
0.0153
0.0161
3.00
0.1102
0.1181
R
0.05
0.15
0.0019
0.0059
O
0°
12°
0°
12°
-
-
-
-
-
0.95 ref
1.80
Dim.
2.00
0.0374 ref
0.0709
0.0787
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP19100CFF
Intentionally left blank
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ZXTP19100CFF
Definitions
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The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
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1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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This term denotes an issued datasheet containing finalized specifications. However, changes to
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© 2007 Published by Zetex Semiconductors plc
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