ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC(cont) = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100mV PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions B Features E • High gain • Low saturation voltage • High peak current Applications • High side driver • Motor drive • Load disconnect switch E C C B Ordering information Device ZXTP19100CZTA Reel size (inches) Tape width (mm) Quantity per reel 7 12 1000 Pinout - top view Device marking 1M3 Issue 1- February 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXTP19100CZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage VCBO -110 V Collector-Emitter voltage (forward blocking) VCEX -110 V Collector-Emitter voltage VCEO -100 V Emitter-Collector voltage (reverse blocking) VECO -7 V Emitter-Base voltage VEBO -7 V Continuous Collector current(c) IC -2 A Base current IB -1 A Peak pulse current ICM -3 A Power dissipation at TA =25°C(a) PD 1.1 W 8.8 mW/°C 1.8 W 14.4 mW/°C 2.4 W 19.2 mW/°C Linear derating factor PD Power dissipation at TA =25°C(b) Linear derating factor PD Power dissipation at TA =25°C(c) Linear derating factor 4.46 W 35.7 mW/°C 26.3 W 213 mW/°C Tj, Tstg -55 to 150 °C PD Power dissipation at TA =25°C(d) Linear derating factor PD Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Thermal resistance Parameter Symbol Limit Unit ambient(a) RUJA 117 °C/W Junction to ambient(b) RUJA 68 °C/W Junction to ambient(c) RUJA 51 °C/W Junction to ambient(d) RUJA 28 °C/W Junction to case(e) RUJC 4.5 °C/W Junction to NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab).Typical Issue 1- February 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXTP19100CZ Thermal characteristics 1m Collector Current (A) CE(sat) Limited see note (c) Collector Current (A) V 1 DC 1s 100ms 100m 10ms 1ms 100µs =25°C amb 100m 1 -V CE BV =100V (BR)CEO 10µ 1µ BV C T 10m in this region 100µ 10 100 90 Collector-Emitter Voltage (V) 100 -V CE Safe Operating Area =110V T (BR)CEX - I -I C Single Pulse Failure may occur =25°C amb 110 120 Collector-Emitter Voltage (V) Safe Operating Area Max Power Dissipation (W) 2.5 see note (c) 2.0 1.5 see note (b) 1.0 0.5 see note (a) 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Issue 1- February 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXTP19100CZ 100 120 T 100 =25°C Maximum Power (W) Thermal Resistance (°C/W) Thermal characteristics amb see note (a) 80 60 40 D=0.5 D=0.2 Single Pulse 20 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 Single Pulse T 10 1 100µ 1k 1m Pulse Width (s) Maximum Power (W) Thermal Resistance (°C/W) =25°C amb see note (b) 50 D=0.5 30 Single Pulse D=0.2 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 T =25°C amb see note (b) 10 1 100µ 1k 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation T =25°C Maximum Power (W) Thermal Resistance (°C/W) 1k 100 50 20 100 Single Pulse Pulse Width (s) Transient Thermal Impedance 30 10 100 T 60 40 1 Pulse Width (s) 70 20 10m 100m Pulse Power Dissipation Transient Thermal Impedance 40 =25°C amb see note (a) amb see note (c) D=0.5 Single Pulse D=0.2 10 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 =25°C amb 10 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) © Zetex Semiconductors plc 2008 T see note (c) 1 100µ 1k Pulse Power Dissipation Transient Thermal Impedance Issue 1- February 2008 Single Pulse 4 www.zetex.com ZXTP19100CZ Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Collector-Base breakdown BVCBO voltage Collector-Emitter BVCEX breakdown voltage Min. -110 Typ. -135 -110 -135 V IE = -100µA, RBC < 1kΩ or 0.25V > VBC > -0.25V Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage (reverse blocking) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector-Base cut-off current BVCEO -100 -130 V IC= -10mA (*) BVECX -7 -8.3 V IE = -100µA, RBC < 1kΩ or 0.25V > VBC > -0.25V BVECO -7 -8.7 V IE = -100µA BVEBO -7 -8.3 V IE = -100µA ICBO <1 -50 -0.5 nA µA VCB = -110V VCB = -110V, Tamb=100°C Emitter cut-off current IEBO <1 -50 nA VEB = -5.6V Collector-Emitter saturation voltage VCE(sat) -100 -100 -180 -220 -130 -125 -230 -295 mV mV mV mV IC = -0.5A, IB = -20mA(*) IC = -1A, IB = -100mA(*) IC = -1A, IB = -50mA(*) IC = -2A, IB = -200mA(*) Base-Emitter saturation voltage Base-Emitter turn-on voltage Static forward current transfer ratio VBE(sat) -890 -1000 mV IC = -2A, IB = -200mA(*) VBE(on) -840 -950 mV IC = -2A, VCE = -2V(*) 300 130 25 500 Transition frequency fT 142 Input capacitance Cibo 291 400 pF VEB = -0.5V, f = 1MHz(*) Output capacitance Cobo 23.5 40 pF VCB = -10V, f = 1MHz(*) Delay time td 24.7 ns Rise time tr 22.4 ns Storage time ts 660 ns Fall time tf 107 ns hFE 200 70 20 Max. Unit V Conditions IC = -100µA IC = -100mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -2A, VCE = -2V(*) MHz IC = -100mA, VCE = -10V f = 50MHz IC = -500mA, VCC = -10V, IB1 = -IB2 = -50mA Rb=100Ω, Rc=20Ω NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 1- February 2008 © Zetex Semiconductors plc 2008 5 www.zetex.com Typical characteristics 1 0.4 Tamb=25°C I /I =10 C B I /I =50 B CE(SAT) CE(SAT) (V) 0.3 (V) C 100m I /I =20 - V B - V C 0.2 150°C 100°C 0.1 25°C I /I =10 C B 10m 0.0 1m 10m 100m - I 1 V CE(SAT) CE(SAT) V C 300 25°C 0.6 200 0.4 -55°C B 0.8 (V) 400 BE(SAT) 100°C - V 500 C -55°C I /I =10 150°C v I 1.0 600 =2V CE 0.6 150°C 100°C 0.4 25°C 100 0.2 0.2 0 1m 10m - I 100m 1 1m h FE 10m - I Collector Current (A) C C v I 100m 1 Collector Current (A) V C BE(SAT) v I C 400 1.2 V =2V 350 CE 1.0 Capacitance (pF) -55°C 25°C (V) 1 Collector Current (A) V C Typical Gain (hFE ) Normalised Gain C 0.0 0.8 0.6 - V BE(ON) 100m - I 1.0 0.8 10m v I 1.6 1.2 10 Collector Current (A) C 1.4 -55°C 150°C 0.4 100°C f = 1MHz 300 250 Cibo 200 150 100 Cobo 50 0 0.2 1m 10m - I 100m 10m 1 V BE(ON) Issue 1- February 2008 © Zetex Semiconductors plc 2008 100m 1 10 100 - Voltage(V) Collector Current (A) C Capacitance v Voltage v I C 6 www.zetex.com ZXTP19100CZ Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1- February 2008 © Zetex Semiconductors plc 2008 7 www.zetex.com ZXTP19100CZ Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. 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Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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