ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES SOT89 • Extremely low equivalent on-resistance • 5.5 amps continuous current • Up to 15 amps peak current • Very low saturation voltages < -60mV @ -1A APPLICATIONS • DC - DC converters • MOSFET gate drivers • Charging circuits • Power switches • Motor control PINOUT ORDERING INFORMATION DEVICE ZXTP2009ZTA REEL SIZE TAPE WIDTH QUANTITY PER REEL 7” 12mm 1,000 units DEVICE MARKING 53Z TOP VIEW ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTP2009Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV CBO -50 V Collector-base voltage BV CBS -50 V Collector-emitter voltage BV CEO -40 V Emitter-base voltage BV EBO -7.5 V Continuous collector current (b) IC -5.5 A Peak pulse current I CM -15 A Power dissipation at T A =25°C (a) PD 0.9 W 7.2 mW/°C Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor PD Power dissipation at T A =25°C (c) PD Linear derating factor Power dissipation at T A =25°C (d) PD Linear derating factor T j , T stg Operating and storage temperature range 1.5 W 12 mW/°C 2.1 W 16.8 mW/°C 3 W 24 mW/°C -55 to 150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R ⍜JA 139 °C/W Junction to ambient (b) R ⍜JA 83 °C/W Junction to ambient (c) R ⍜JA 60 °C/W Junction to ambient (d) R ⍜JA 42 °C/W NOTES (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB measured at t⬍ 5 secs. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 2 ZXTP2009Z CHARACTERISTICS ISSUE 1 - JUNE 2005 3 SEMICONDUCTORS ZXTP2009Z ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. Collector-base breakdown voltage BV CBO -50 -90 V I C =-100A Collector-emitter breakdown voltage BV CES -50 -90 V I C =-100A Collector-emitter breakdown voltage BV CEO -40 -58 V I C =-10mA* Emitter-base breakdown voltage BV EBO -7.5 -8.3 V I E =-100A Collector cut-off current I CBO ⬍1 -20 nA V CB =-40V Collector cut-off current I CES ⬍1 -20 nA V CB =-32V Emitter cut-off current I EBO ⬍1 -20 nA V EB =-6V Collector-emitter saturation voltage V CE(SAT) -15 -30 mV I C =-0.1A, I B =-10mA* -44 -60 mV IC=-1A, IB=-100mA* -50 -70 mV IC=-1A, IB=-50mA* -120 -165 mV IC=-1A, IB=-10mA* -70 -80 mV IC=-2A, IB=-200mA* -125 -175 mV IC=-2A, IB=-40mA* -130 -175 mV IC=-3.5A, IB=-175mA* -162 -185 mV IC=-5.5A, IB=-550mA* Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) H FE MAX. UNIT CONDITIONS -820 -900 mV I C =-2A, I B =-40mA* -1000 -1075 mV IC=-5.5A, IB=-550mA* -778 -850 mV I C =-2A, V CE =-2V* -869 -950 mV IC=-5.5A, VCE=-2V* 200 390 200 350 170 290 IC=-2A, VCE=-2V* 110 175 IC=-5.5A, VCE=-2V* 152 I C =-10mA, V CE =-2V* IC=-0.5A, VCE=-2V* 550 MHz IC =-50mA, VCE =-10V f=100MHz Transition frequency fT Output capacitance C OBO 53 pF ns Switching times Switching times td 18 tr 17 ts 325 tr 60 td 55 tr 107 ts 264 tr 103 V CB =-10V, f=1MHz* I C =-1A, V CC =-10V, I B1 =I B2 =-100mA ns I C =-2A, V CC =-30V, I B1 =I B2 =-20mA * Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ2%. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 4 ZXTP2009Z TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 SEMICONDUCTORS ZXTP2009Z PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 E 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 E1 - 2.60 - 0.102 b2 1.50 c 0.28 1.80 0.060 0.071 G 2.90 3.00 0.114 0.118 0.44 0.011 0.017 H 2.60 2.85 0.102 0.112 D 4.40 4.60 0.173 0.181 - - - - - © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 SEMICONDUCTORS 6