ZXTP25140BFH 140V, SOT23, PNP medium power transistor Summary BV(BR)CEX > -180V; BV(BR)CEO > -140V BV(BR)ECO > -7V ; IC(cont) = -1A Rce(sat) = 180 m⍀ typical Vce(sat) < -260mV @ 1A ; PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT23 package • 180V forward blocking voltage • Low saturation voltage E Applications • DC-DC converters • High side switching Ordering information Device ZXTP25140BFHTA Reel size (inches) Tape width Quantity per reel 7 8mm 3,000 Pinout - top view Device marking 026 Issue 1 - March 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXTP25140BFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage VCBO -180 V Collector-emitter voltage (forward blocking) VCEX -180 V Collector-emitter voltage VCEO -140 V Emitter-collector voltage (reverse blocking) VECO -7 V Emitter-base voltage VEBO -7 V IC -1 A Peak pulse current ICM -3 A Power dissipation at TA=25°C (a) Linear derating factor PD 0.73 5.84 W mW/°C Power dissipation at TA=25°C (b) Linear derating factor PD 1.05 8.4 W mW/°C Power dissipation at TA=25°C (c) Linear derating factor PD 1.25 9.6 W mW/°C Power dissipation at TA=25°C (d) Linear derating factor PD 1.81 14.5 W mW/°C Tj, Tstg -55 to 150 °C Symbol Limit Unit Junction to ambient (a) R⍜JA 171 °C/W Junction to ambient (b) R⍜JA 119 °C/W Junction to ambient (c) R⍜JA 100 °C/W Junction to ambient (d) R⍜JA 69 °C/W Continuous collector current (a) Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 2 www.zetex.com ZXTP25140BFH Characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com ZXTP25140BFH Electrical characteristics (at TAMB = 25°C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Symbol BVCBO Min. -180 Typ. -205 BVCEX, -180 -205 V IC = -100A, RBE ⱕ 1k⍀ or -0.25V < VBE < 1V Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-base breakdown voltage Collector cut-off current BVCEO -140 -160 V IC = -10mA (*) BVECO -7 -8.5 V IE = -100uA (*) BVEBO -7 -8.2 V IE = -100A ICBO <-1 -50 -20 nA A VCB = -144V VCB = -144V, TAMB= 100°C Collector emitter cut-off current ICEX - -100 nA VCE = -144V; RBE ⱕ 1k⍀ or -0.25V < VBE < 1V Emitter cut-off current IEBO <-1 -50 nA VEB = -5.6V Collector-emitter saturation voltage Vce(sat) -40 -50 mV IC = -0.1A, IB = -10mA (*) -110 -135 mV IC = -0.1A, IB = -2mA (*) -90 -110 mV IC = -0.5A, IB = -50mA (*) -170 -230 mV IC = -0.5A, IB = -25mA (*) -180 -260 mV IC = -1A, IB = -100mA (*) Vbe(sat) -850 -950 mV IC = -1A, IB = -100mA (*) VBE(ON) -800 -900 mV IC = -1A, VCE = -2V (*) 100 200 300 100 190 IC = -0.1A, VCE = -2V (*) 20 30 IC = -1A, VCE = -2V (*) Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio hFE Max. Unit V Conditions IC = -100A IC = -10mA, VCE = -2V (*) Transition frequency fT 75 MHz IC = -10mA, VCE = -20V f = 20MHz Output capacitance COBO 10 pF VCB = -20V, f = 1MHz (*) Turn-on time t(on) 102 ns VCC = -20V. IC = -100mA, IB1 = IB2= -10mA Turn-off time t(off) 854 ns NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com ZXTP25140BFH Typical characteristics Issue 1 - March 2006 © Zetex Semiconductors plc 2006 5 www.zetex.com ZXTP25140BFH Package outline - SOT23 L H N G D 3 leads M A B C K Dim. F Millimeters Inches Min. Max. Min. Max. A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 C - 1.10 D 0.37 F 0.085 G Dim. Millimeters Inches Min. Max. Max. Max. H 0.33 0.51 0.013 0.020 0.055 K 0.01 0.10 0.0004 0.004 - 0.043 L 2.10 2.50 0.083 0.0985 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 0.15 0.0034 0.0059 N 0.95 NOM - - 1.90 NOM 0.075 NOM 0.0375 NOM - - - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - March 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com