UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 TO-220F2 FEATURES * RDS(ON) = 2.5Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 8.0 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness TO-220F TO-220 DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1 1 TO-251 TO-252 SYMBOL 1 1 TO-263 TO-262 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N65L-TA3-T 4N65G-TA3-T 4N65L- TF1-T 4N65G-TF1-T 4N65L- TF2-T 4N65G-TF2-T 4N65L- TF3-T 4N65G-TF3-T 4N65L-TM3-T 4N65G-TM3-T 4N65L-TN3-R 4N65G-TN3-R 4N65L-TN3-T 4N65G-TN3-T 4N65L-T2Q-T 4N65G-T2Q-T 4N65L-TQ2-R 4N65G-TQ2-R 4N65L-TQ2-T 4N65G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 TO-252 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube Tape Reel Tube 1 of 8 QW-R502-397.F 4N65 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 4.4 A 4.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 16 A 260 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-262/TO-263 106 TO-220F/TO-220F1 36 Power Dissipation PD W TO-220F2 38 TO-251/ TO-252 50 Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F2 TO-251/ TO-252 TO-220/TO-262/TO-263 TO-220F/TO-220F1 TO-220F2 TO-251/ TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJc RATINGS 62.5 62.5 62.5 83 1.18 3.47 3.28 2.5 UNIT °С/W °С/W 2 of 8 QW-R502-397.F 4N65 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0 V, ID = 250μA 650 VDS = 650 V, VGS = 0 V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ID=250μA, Referenced to 25°C Forward IGSS Reverse △BVDSS/△TJ Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 2.2A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 520V,ID= 4.0A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.4A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 4.4A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature Gate-Source Leakage Current UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.6 V 10 μA 100 nA -100 nA V/°С 2.4 4.0 2.5 V Ω 520 70 8 670 90 11 pF pF pF 13 45 25 35 15 3.4 7.1 35 100 60 80 20 ns ns ns ns nC nC nC 1.4 V 4.4 A 17.6 A 2.0 250 1.5 ns μC 3 of 8 QW-R502-397.F 4N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-397.F 4N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-397.F 4N65 TYPICAL CHARACTERISTICS Breakdown Voltage Variation vs. Temperature On-Resistance Junction Temperature 3.0 Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) 1.2 Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) Power MOSFET 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250µA 0.8 -50 -100 10 0 100 50 150 200 2.5 2.0 1.5 1.0 Note: 1. VGS=10V 2. ID=4A 0.5 0.0 -100 100 50 150 Junction Temperature, TJ (°С) Junction Temperature, TJ (°С) On-State Characteristics Transfer Characteristics VGS 10V 9V 8V 7V 6V 5.5V 5 V Bottorm:5.0V 200 10 Top: 25°С 1 5.0V 150°С 1 0.1 Notes: 1. 250µs Pulse Test 2. TC=25°С 0.1 0 -50 1 10 Drain-to-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 2 4 6 8 10 Gate-Source Voltage, VGS (V) 6 of 8 QW-R502-397.F 4N65 TYPICAL CHARACTERISTICS(Cont.) Capacitance Characteristics (Non-Repetitive) 1200 1000 12 10 Ciss 800 600 Gate Charge Characteristics Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Coss Notes: 1. VGS=0V 2. f = 1MHz 0 0.1 VDS=120V 6 4 400 200 VDS=300V VDS=480V 8 2 Crss Note: ID=4A 0 1 0 10 5 10 15 20 25 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) PD (w) Thermal Response, θJC (t) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-397.F 4N65 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-397.F