ETC 5962

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add case outlines 5, 6, 7 and 8. - tmh
00-06-08
Monica L. Poelking
B
Add device types 09 – 15. - tmh
00-07-26
Thomas M. Hess
C
Add die requirements and appendix A. – tmh
00-09-01
Monica L. Poelking
D
Change dimensions for case outline 8. Boileplate update. phn
01-08-14
Thomas M. Hess
E
Add device types 16 - 29. - phn
02-03-08
Thomas M. Hess
REV
E
E
E
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SHEET
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REV
E
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REV
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REV STATUS
REV
E
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A
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OF SHEETS
SHEET
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9
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PMIC N/A
PREPARED BY
DEFENSE SUPPLY CENTER COLUMBUS
Thomas M. Hess
STANDARD
MICROCIRCUIT
DRAWING
COLUMBUS, OHIO 43216
http://www.dscc.dla.mil
CHECKED BY
Thomas M. Hess
APPROVED BY
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
Monica L. Poelking
MICROCIRCUIT, DIGITAL, CMOS, MG2, GATE
ARRAY, MONOLITHIC SILICON
DRAWING APPROVAL DATE
00-04-04
REVISION LEVEL
E
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1 OF
5962-00B02
101
5962-E268-02
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
|
|
|
Federal
stock class
designator
\
|
|
|
RHA
designator
(see 1.2.1)
01
|
|
|
Device
type
(see 1.2.2)
00B02
/
Q
|
|
|
Device
class
designator
(see 1.2.3)
X
|
|
|
Case
outline
(see 1.2.4)
C
|
|
|
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
Circuit function
01
02
03
04
05
06
07
08
MG2044E
MG2091E
MG2140E
MG2194E
MG2265E
MG2360E
MG2480E
MG2700E
44,000 MG2RT gates available
91,000 MG2RT gates available
140,000 MG2RT gates available
194,000 MG2RT gates available
265,000 MG2RT gates available
360,000 MG2RT gates available
480,000 MG2RT gates available
700,000 MG2RT gates available
09
10
11
12
13
14
15
MG2044
MG2091
MG2140
MG2194
MG2265
MG2360
MG2480
44,000 MG2 gates available
91,000 MG2 gates available
140,000 MG2 gates available
194,000 MG2 gates available
265,000 MG2 gates available
360,000 MG2 gates available
480,000 MG2 gates available
16
17
18
19
20
21
22
MG2M044E
MG2M091E
MG2M140E
MG2M194E
MG2M265E
MG2M360E
MG2M480E
composite 44,000 MG2RT gates available
composite 91,000 MG2RT gates available
composite 140,000 MG2RT gates available
composite 194,000 MG2RT gates available
composite 265,000 MG2RT gates available
composite 360,000 MG2RT gates available
composite 480,000 MG2RT gates available
23
24
25
26
27
28
29
MG2M044
MG2M091
MG2M140
MG2M194
MG2M265
MG2M360
MG2M480
composite 44,000 MG2 gates available
composite 91,000 MG2 gates available
composite 140,000 MG2 gates available
composite 194,000 MG2 gates available
composite 265,000 MG2 gates available
composite 360,000 MG2 gates available
composite 480,000 MG2 gates available
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
2
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device requirements documentation
Device class
M
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Y
Z
U
T
M
N
4
5
6
7
8
Descriptive designator
See Figure 1
See Figure 1
See Figure 1
See Figure 1
See Figure 1
See Figure 1
See Figure 1
CQCC2-F172
See Figure 1
See Figure 1
See Figure 1
See Figure 1
Terminals
Package style
132
160
196
256
352
84
100
172
132
160
196
100
Flatpack gull wing leads
Flatpack gull wing leads
Flatpack gull wing leads
Flatpack unformed leads
Quad flatpack with non-conductive tie bar
Flatpack unformed leads
Flatpack gull wing leads
Flatpack unformed leads
Flatpack unformed leads
Flatpack unformed leads
Flatpack unformed leads
Flatpack unformed leads
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
1.3 Absolute maximum ratings 1/ 2/
Supply voltage range (VDD)................................................................
Input voltage range (VIN)....................................................................
Input current (IIN)
Signal pin ..................................................................................
Power pin ..................................................................................
Output short circuit current 4/
VOUT = VDD.................................................................................
VOUT = VSS .................................................................................
Lead temperature (soldering, 10 sec) ...............................................
Storage temperature..........................................................................
Maximum junction temperature (TJ) ..................................................
-0.5 V to 7.0 V
-0.5 V to VDD + 0.5 V 3/
-10 mA to 10 mA
-50 mA to 50 mA
48 mA
-36 mA
300°C 5/
-65°C to 150°C
175°C
1.4 Recommended operating conditions.
Supply voltage range......................................................................... 2.4 V to 5.5 V 6/
Ambient operating temperature (TA) ................................................. -55°C to 125°C
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ All voltages referenced to Ground unless otherwise specified.
3/ VDD + 0.5 V shall not exceed 7.0 V.
4/ The maximum output current of any single output in short condition for a maximum duration of 1 second.
5/ Duration 10 s max at a distance not less than 1.6 mm.
6/ This gate array device is capable of being configured with VDD = 3.3 V ±10% or VDD = 5.0 V ±10%.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
3
1.5 Digital logic testing for device classes Q and V.
Fault coverage measurement of manufacturing
logic tests (MIL-STD-883, test method 5012) .................................. As specified in the AID
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings (SMD's).
Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
4
3.3 AID requirements. All AIDs written against this SMD shall be sent to DSCC-VA. The following items shall be provided to
the device manufacturer by the customer as part of an AID.
3.3.1 Terminal connections and pin assignments.
3.3.2 Package type (see 1.2.4).
3.3.3 Functional block diagram (or equivalent VHDL behavioral description).
3.3.4 Functional description terms and symbols.
3.3.5 Logic diagram (or equivalent structural VHDL description or mutually agreed to net list).
3.3.6 Pin function description.
3.3.7 Design tape # or Design document name (i.e., net list).
3.3.8 Design functional tape # or name.
3.3.9 Test functional tape # or name.
3.3.10 Timing diagram(s).
3.3.11 Fault coverage measurement of manufacturing logic tests.
3.3.12 Burn-in circuit.
3.3.13 ESD class and voltage.
3.3.14 Device electrical performance characteristics (additions to Table I). Device electrical performance characteristics
shall include dc parametric, functional, ac parameters and any other data which would be considered required by a design
engineer. All electrical performance characteristics apply over the full recommended ambient operating temperature range and
specified test load conditions.
3.3.15 Maximum power dissipation. Maximum power dissipation shall be in accordance with the application specific design.
3.4 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.5 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.6 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. The AID number shall be added to the
marking by the manufacturer.
3.6.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.7 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
5
3.8 Certificate of conformance. A certificate of conformance as required for device classes Q and V in
MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered
to this drawing.
3.9 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.
3.10 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.11 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 123 (see MIL-PRF-38535, appendix A).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
D
SHEET
6
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
-55°C ≤ TC ≤ +125°C
VDD = 5.0 V ± 10 %
unless otherwise specified
Group A
subgroups
Limits
Device
type
Unit
Min
Max
IOH = -300 µA
1, 2, 3
All
-1.2
-0.2
V
IIL
VIN = GND, VDD = 5.5 V
1, 2, 3
All
-5
-
µA
Low Level Input Current,
Pull-up 2/
IILPU
VIN = GND, VDD = 5.5 V
1, 2, 3
All
-120
-
µA
Low Level Input Current,
Pull-down 2/
ILLPD
VIN = GND, VDD = 5.5 V
1, 2, 3
All
-5
-
µA
High Level Input Current 2/
IIH
VIN = VDD = 5.5 V
1, 2, 3
All
-
5
µA
High Level Input Current,
Pull-up 2/
IIHPU
VIN = VDD = 5.5 V
1, 2, 3
All
-
5
µA
High Level Input Current,
Pull-down 2/
IIHPD
VIN = VDD = 5.5 V
1, 2, 3
All
-
330
µA
Output Leakage Low Current
2/
IOZL
Outputs disabled
VOUT = GND
1, 2, 3
All
-5
IOZHPD
Outputs disabled
VOUT = VDD
1, 2, 3
All
-
330
µA
IOZLPU
Outputs disabled
VOUT = GND
1, 2, 3
All
-120
-
µA
IOZH
Outputs disabled
VOUT = VDD
1, 2, 3
All
-
5
µA
VIL
Functional verification
1, 2, 3
All
-
0.8
V
Input Clamp Voltage to GND
1/
Low Level Input Current
VIC
2/
Output Leakage High
Current Pull-down Output
2/
Output Leakage Low Current
Pull-up Output 2/
Output Leakage High
Current 2/
Low Level Input Voltage 1/
µA
Low Level Output Voltage
BUF 2/
VOL1
VDD = 4.5 V
IOL = +3 mA
1, 2, 3
All
-
0.4
V
Low Level Output Voltage
BUF 2/
VOL2
VDD = 4.5 V
IOL = +6 mA
1, 2, 3
All
-
0.4
V
Low Level Output Voltage
BUF 2/
VOL3
VDD = 4.5 V
IOL = +12 mA
1, 2, 3
All
-
0.4
V
High Level Output Voltage
BUF 2/
VOH1
VDD = 4.5 V
IOH = -3 mA
1, 2, 3
All
3.9
-
V
High Level Output Voltage
BUF 2/
VOH2
VDD = 4.5 V
IOH = -6 mA
1, 2, 3
All
3.9
-
V
See notes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
7
TABLE I. Electrical performance characteristics.- Continued.
Test
High Level
Output Voltage BUF
2/
Schmitt trigger positive
threshold
CMOS input
TTL input
3/
Schmitt trigger negative
threshold
CMOS input
TTL input
3/
Symbol
VOH3
Conditions
-55°C ≤ TC ≤ +125°C
VDD = 5.0 V ± 10 %
unless otherwise specified
VDD = 4.5 V
IOH = -12 mA
Group A
subgroups
Limits
Device
type
All
Unit
Min
Max
3.9
-
V
-
2.8
1.5
V
1.2
1.0
-
V
2.2
-
V
1, 2, 3
1, 2, 3
VT+
1, 2, 3
VT-
High Level Input Voltage
1/
VIH
Functional verification
1, 2, 3
All
Input Capacitance 3/
CI
VDD = 0 V
4
All
15
pF
Output Capacitance 3/
CIO
VDD = 0 V
4
All
15
pF
See notes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
8
TABLE I. Electrical performance characteristics.
Conditions
-55°C ≤ TC ≤ +125°C
Group A
subgroups
Device
type
Min
Max
IOH = -300 µA
1, 2, 3
All
-1.2
-0.2
V
IIL
VIN = GND, VDD = 3.3 V
1, 2, 3
All
-1
-
µA
IILPU
VIN = GND, VDD = 3.3V
1, 2, 3
All
-60
-
µA
ILLPD
VIN = GND, VDD = 3.3 V
1, 2, 3
All
-1
-
µA
IIH
VIN = VDD = 3.3 V
1, 2, 3
All
-
1
µA
IIHPU
VIN = VDD = 3.3 V
1, 2, 3
All
-
1
µA
IIHPD
VIN = VDD = 3.3 V
1, 2, 3
All
-
150
µA
IOZL
Outputs disabled
VOUT = GND
1, 2, 3
All
-1
IOZHPD
Outputs disabled
VOUT = VDD
1, 2, 3
All
-
150
µA
IOZLPU
Outputs disabled
VOUT = GND
1, 2, 3
All
-60
-
µA
IOZH
Outputs disabled
VOUT = VDD
1, 2, 3
All
-
1
µA
VIL
Functional verification
1, 2, 3
All
-
0.8
V
VOL1
VDD = 3.3 V
IOL = +1.5 mA
1, 2, 3
All
-
0.4
V
Low Level Output Voltage
BUF 2/
VOL2
VDD = 3.3 V
IOL = +3 mA
1, 2, 3
All
-
0.4
V
Low Level Output Voltage
BUF 2/
VOL3
VDD = 3.3 V
IOL = +6 mA
1, 2, 3
All
-
0.4
V
High Level Output Voltage
BUF 2/
VOH1
VDD = 2.7 V
IOH = -1 mA
1, 2, 3
All
2.4
-
V
High Level Output Voltage
BUF 2/
VOH2
VDD = 2.7 V
IOH = -2 mA
1, 2, 3
All
2.4
-
V
Test
Symbol
Input Clamp Voltage to GND
1/
VIC
Low Level Input Current
VDD = 3.3 V ± 10 %
unless otherwise specified
Limits
Unit
2/
Low Level Input Current,
Pull-up 2/
Low Level Input Current,
Pull-down 2/
High Level Input Current
2/
High Level Input Current,
Pull-up 2/
High Level Input Current,
Pull-down 2/
Output Leakage Low Current
2/
Output Leakage High
Current Pull-down Output
2/
Output Leakage Low Current
Pull-up Output 2/
Output Leakage High
Current 2/
Low Level Input Voltage
1/
Low Level Output Voltage
BUF 2/
µA
See notes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
9
TABLE I. Electrical performance characteristics.- Continued.
Test
High Level
Output Voltage BU2
2/
Schmitt trigger positive
threshold
CMOS input
TTL input
3/
Schmitt trigger negative
threshold
CMOS input
TTL input
3/
Symbol
VOH3
Conditions
-55°C ≤ TC ≤ +125°C
VDD = 3.3 V ± 10 %
unless otherwise specified
VDD = 2.7 V
IOH = -4 mA
Group A
subgroups
Limits
Device
type
All
Unit
Min
Max
2.4
-
V
-
1.5
1.1
V
0.8
0.2
-
V
2.2
-
V
1, 2, 3
1, 2, 3
VT+
1, 2, 3
VT-
High Level Input Voltage
1/
VIH
Functional verification
1, 2, 3
All
Input Capacitance 3/
CI
VDD = 0 V
4
All
15
pF
Output Capacitance 3/
CIO
VDD = 0 V
4
All
15
pF
1/ Forcing conditions of the functional test, assure that these limits are met, but they will not be individually recorded.
2/ Read & Record measurements in accordance with MIL-PRF-38535.
3/ Tested at initial design and after major process changes, otherwise guaranteed.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
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A
REVISION LEVEL
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SHEET
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Case X
Figure 1. Case outlines - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
11
Case Y
Figure 1. Case outlines - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
12
Case Z
Figure 1. Case outlines - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
13
Case U
Figure 1. Case outlines - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
14
Case T
Figure 1. Case outlines - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
15
Case M
Figure 1. Case outlines - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
16
Case N
Figure 1. Case outlines – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
17
Case 5
Figure 1. Case outlines – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
18
Case 6
Figure 1. Case outlines – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
19
Case 7
Figure 1. Case outlines – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
A
SHEET
20
Case 8
Figure 1. Case outlines – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
D
SHEET
21
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition is described in the AID. The test circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing or acquiring activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent
specified in test method 1015.
(2) TA = +125°C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
D
SHEET
22
TABLE II. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class M
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
1, 7, 9
1, 7, 9
1, 7, 9
Final electrical
parameters (see 4.2)
1, 2, 3, 7, 8, 9, 10, 11
1/
1, 2, 3, 7, 8, 9,
10, 11 1/
1, 2, 3, 7, 8,
9, 10, 11 2/
1, 2, 3, 4, 7, 8, 9, 10,
11
1, 2, 3, 4, 7, 8,
9, 10, 11
1, 2, 3, 4, 7,
8, 9, 10, 11
Group C end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group D end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group E end-point electrical
parameters (see 4.4)
1, 7, 9
1, 7, 9
1, 7, 9
Group A test
requirements (see 4.4)
1/ PDA applies to subgroup 1.
2/ PDA applies to subgroups 1 and 7.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table II herein.
b.
For device class Q and V, subgroups 7 and 8 tests shall be sufficient to verify the functionality of the device as
described in the AID.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition as described in the AID. The test circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit
shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1005 of MIL-STD-883.
b.
TA = +125°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
D
SHEET
23
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table II herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.
c.
When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
D
SHEET
24
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
10. SCOPE
10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QML plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices
using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes
consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or
Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
10.2 PIN. The PIN is as shown in the following example:
5962



Federal
stock class
designator
\



RHA
designator
(see 10.2.1)
01



Device
type
(see 10.2.2)
00B02
/
V



Device
class
designator
(see 10.2.3)
9



Die
code
A



Die
Details
(see 10.2.4)
\/
Drawing number
10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A
dash (-) indicates a non-RHA die.
10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
01
02
03
04
05
06
07
09
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Generic number
MG2044E
MG2091E
MG2140E
MG2194E
MG2265E
MG2360E
MG2480E
MG2044
MG2091
MG2140
MG2194
MG2265
MG2360
MG2480
MG2M044E
MG2M091E
MG2M140E
MG2M194E
MG2M265E
MG2M360E
MG2M480E
MG2M044
MG2M091
MG2M140
MG2M194
MG2M265
MG2M360
MG2M480
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
Circuit function
44,000 MG2RT gates available
91,000 MG2RT gates available
140,000 MG2RT gates available
194,000 MG2RT gates available
265,000 MG2RT gates available
360,000 MG2RT gates available
480,000 MG2RT gates available
44,000 MG2 gates available
91,000 MG2 gates available
140,000 MG2 gates available
194,000 MG2 gates available
265,000 MG2 gates available
360,000 MG2 gates available
480,000 MG2 gates available
composite 44,000 MG2RT gates available
composite 91,000 MG2RT gates available
composite 140,000 MG2RT gates available
composite 194,000 MG2RT gates available
composite 265,000 MG2RT gates available
composite 360,000 MG2RT gates available
composite 480,000 MG2RT gates available
composite 44,000 MG2 gates available
composite 91,000 MG2 gates available
composite 140,000 MG2 gates available
composite 194,000 MG2 gates available
composite 265,000 MG2 gates available
composite 360,000 MG2 gates available
composite 480,000 MG2 gates available
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
25
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
10.2.3 Device class designator.
Device class
Device requirements documentation
Q or V
Certification and qualification to the die requirements of MIL-PRF-38535
10.2.4 Die Details. The die details designation shall be a unique letter which designates the die physical dimensions,
bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each
product and variant supplied to this appendix.
10.2.4.1 Die physical dimensions.
Die type
Figure number
01
02
03
04
05
06
07
08
A-1
A-2
A-3
A-4
A-5
A-6
A-7
REVERSED
09
10
11
12
13
14
15
A-1
A-2
A-3
A-4
A-5
A-6
A-7
16
17
18
19
20
21
22
A-1
A-2
A-3
A-4
A-5
A-6
A-7
23
24
25
26
27
28
29
A-1
A-2
A-3
A-4
A-5
A-6
A-7
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
26
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
10.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
02
03
04
05
06
07
08
A-1
A-2
A-3
A-4
A-5
A-6
A-7
RESERVED
09
10
11
12
13
14
15
A-1
A-2
A-3
A-4
A-5
A-6
A-7
16
17
18
19
20
21
22
A-1
A-2
A-3
A-4
A-5
A-6
A-7
23
24
25
26
27
28
29
A-1
A-2
A-3
A-4
A-5
A-6
A-7
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
27
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
10.2.4.3 Interface materials.
Die type
Figure number
01
02
03
04
05
06
07
08
A-1
A-2
A-3
A-4
A-5
A-6
A-7
RESERVED
09
10
11
12
13
14
15
A-1
A-2
A-3
A-4
A-5
A-6
A-7
16
17
18
19
20
21
22
A-1
A-2
A-3
A-4
A-5
A-6
A-7
23
24
25
26
27
28
29
A-1
A-2
A-3
A-4
A-5
A-6
A-7
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
28
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
10.2.4.4 Assembly related information.
Die type
Figure number
01
02
03
04
05
06
07
08
A-1
A-2
A-3
A-4
A-5
A-6
A-7
RESERVED
09
10
11
12
13
14
15
A-1
A-2
A-3
A-4
A-5
A-6
A-7
16
17
18
19
20
21
22
A-1
A-2
A-3
A-4
A-5
A-6
A-7
23
24
25
26
27
28
29
A-1
A-2
A-3
A-4
A-5
A-6
A-7
10.3 Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.
10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
29
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
20. APPLICABLE DOCUMENTS.
20.1 Government specifications, standards, and handbooks. Unless otherwise specified, the following specification,
standard, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards
specified in the solicitation, form a part of this drawing to the extent specified herein.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883
- Test Method Standard Microcircuits.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD’s).
(Copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition
functions should be obtained from the contracting activity or as directed by the contracting activity).
20.2. Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing shall take precedence.
30. REQUIREMENTS
30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not effect the form, fit or function as described herein.
30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified
in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.
30.2.1 Die physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figures A-1 thru A-7.
30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in 10.2.4.2 and on figures A-1 thru A-7.
30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figures A-1 thru A-7.
30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figures A-1 thru
A-7.
30.2.5 Truth table(s). The truth table(s) shall be as defined within paragraph 3.2.3. of the body of this document.
30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient
to make the packaged die capable of meeting the electrical performance requirements in table I.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
30
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN
listed in 10.2 herein. The certification mark shall be a “QML” or ‘Q’ as required by MIL-PRF-38535.
30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance
submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s
product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.
30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
40. QUALITY ASSURANCE PROVISIONS
40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not effect the form, fit or function as described herein.
40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum it shall consist of:
a)
Wafer lot acceptance for Class V product using the criteria defined within MIL-STD-883 test method 5007.
b)
100% wafer probe (see paragraph 30.4).
c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 test method 2010 or the
alternate procedures allowed within MIL-STD-883 test method 5004.
40.3 Conformance inspection.
40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,
4.4.4.1.1., 4.4.4.2, 4.4.4.3 and 4.4.4.4.
50. DIE CARRIER
50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
60 NOTES
60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and
logistics purposes.
60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone
(614)-692-0547.
60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined within
MIL-PRF-38535 and MIL-STD-1331.
60.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have
agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
31
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be
maintained and available from the device manufacturer.
See subsequent pages for a table of pad locations.
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 4940.04 x 4840.11 microns (with scribe line)
Die thickness: 475 microns
Interface materials.
Top metallization: Aluminium + Copper
Backside metallization: Bare Silicon
Glassivation.
Type: Oxinitride
Thickness: 10,000 Angstroms
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: Not connected
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
32
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-1. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
33
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-1. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
34
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-1. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
35
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-1. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
36
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-1. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
37
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be
maintained and available from the device manufacturer.
See subsequent pages for a table of pad locations.
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 6600.05 x 6530.05 microns (with scribe line)
Die thickness: 475 microns
Interface materials.
Top metallization: Aluminium + Copper
Backside metallization: Bare Silicon
Glassivation.
Type: Oxinitride
Thickness: 10,000 Angstroms
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: Not connected
Special assembly instructions: None
FIGURE A-2. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
38
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-2. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
39
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-2. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
40
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-2. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
41
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-2. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
42
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-2. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
43
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-2. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
44
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be
maintained and available from the device manufacturer.
See subsequent pages for a table of pad locations.
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 7600.11 x 7590.13 microns (with scribe line)
Die thickness: 475 microns
Interface materials.
Top metallization: Aluminium + Copper
Backside metallization: Bare Silicon
Glassivation.
Type: Oxinitride
Thickness: 10,000 Angstroms
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: Not connected
Special assembly instructions: None
FIGURE A-3. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
45
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-3. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
46
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-3. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
47
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-3. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
48
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-3. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
49
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-3. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
50
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-3. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
51
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-3. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
52
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-3. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
53
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be
maintained and available from the device manufacturer.
See subsequent pages for a table of pad locations.
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 8730 x 8790 microns (with scribe line)
Die thickness: 475 microns
Interface materials.
Top metallization: Aluminium + Copper
Backside metallization: Bare Silicon
Glassivation.
Type: Oxinitride
Thickness: 10,000 Angstroms
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: Not connected
Special assembly instructions: None
FIGURE A-4. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
54
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
55
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
56
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
57
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
58
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
59
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
60
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
61
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
62
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-4. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
63
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be
maintained and available from the device manufacturer.
See subsequent pages for a table of pad locations.
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 9910.15 x 9900.09 microns (with scribe line)
Die thickness: 475 microns
Interface materials.
Top metallization: Aluminium + Copper
Backside metallization: Bare Silicon
Glassivation.
Type: Oxinitride
Thickness: 10,000 Angstroms
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: Not connected
Special assembly instructions: None
FIGURE A-5. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
64
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
65
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
66
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
67
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
68
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
69
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
70
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
71
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
72
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
73
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-5. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
74
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be
maintained and available from the device manufacturer.
See subsequent pages for a table of pad locations.
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 11530.09 x 11600.13 microns (with scribe line)
Die thickness: 475 microns
Interface materials.
Top metallization: Aluminium + Copper
Backside metallization: Bare Silicon
Glassivation.
Type: Oxinitride
Thickness: 10,000 Angstroms
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: Not connected
Special assembly instructions: None
FIGURE A-6. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
75
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
76
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
77
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
78
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
79
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
80
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
81
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
82
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
83
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
84
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
85
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
86
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-6. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
87
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
Due to the complexity of the device, a graphical representation of the pad locations is not available. This figure shall be
maintained and available from the device manufacturer.
See subsequent pages for a table of pad locations.
Die bonding pad locations and electrical functions
Die physical dimensions.
Die size: 13020.13 x 12950.12 microns (with scribe line)
Die thickness: 475 microns
Interface materials.
Top metallization: Aluminium + Copper
Backside metallization: Bare Silicon
Glassivation.
Type: Oxinitride
Thickness: 10,000 Angstroms
Substrate: Single crystal silicon
Assembly related information.
Substrate potential: Not connected
Special assembly instructions: None
FIGURE A-7. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
88
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
89
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
90
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
91
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
92
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
93
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
94
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
95
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
96
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
98
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
99
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. – Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
100
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-00B02
FIGURE A-7. Die bonding pad locations and electrical functions. - Continued
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
5962-00B02
A
REVISION LEVEL
E
SHEET
101
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 02-03-08
Approved sources of supply for SMD 5962-00B02 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
5962-00B0201Q_C 3/
Vendor
CAGE
number
F7400
Vendor
similar
PIN 2/
MG2044E
5962-00B0201V_C 3/
MG2044E
5962-00B0201Q9A 4/
MM0-G2044EHxxxMQ
5962-00B0201V9A 4/
SM0-G2044EHxxxSV
5962-00B0202Q_C 3/
F7400
MG2091E
5962-00B0202V_C 3/
MG2091E
5962-00B0202Q9A 4/
MM0-G2091EHxxxMQ
5962-00B0202V9A 4/
SM0-G2091EHxxxSV
5962-00B0203Q_C 3/
F7400
MG2140E
5962-00B0203V_C 3/
MG2140E
5962-00B0203Q9A 4/
MM0-G2140EHxxxMQ
5962-00B0203V9A 4/
SM0-G2140EHxxxSV
5962-00B0204Q_C 3/
F7400
MG2194E
5962-00B0204V_C 3/
MG2194E
5962-00B0204Q9A 4/
MM0-G2194EHxxxMQ
5962-00B0204V9A 4/
SM0-G2194EHxxxSV
5962-00B0205Q_C 3/
F7400
MG2265E
5962-00B0205V_C 3/
MG2265E
5962-00B0205Q9A 4/
MM0-G2265EHxxxMQ
5962-00B0205V9A 4/
SM0-G2265EHxxxSV
5962-00B0206Q_C 3/
F7400
MG2360E
5962-00B0206V_C 3/
MG2360E
5962-00B0206Q9A 4/
MM0-G2360EHxxxMQ
5962-00B0206V9A 4/
SM0-G2360EHxxxSV
5962-00B0207Q_C 3/
F7400
MG2480E
5962-00B0207V_C 3/
MG2480E
5962-00B0207Q9A 4/
MM0-G2480EHxxxMQ
5962-00B0207V9A 4/
SM0-G2480EHxxxSV
Standard
microcircuit drawing
PIN 1/
5962-00B0209Q_C 3/
Vendor
CAGE
number
Vendor
similar
PIN 2/
F7400
MG2044
5962-00B0209Q9A 4/
5962-00B0210Q_C 3/
MM0-G2044xxxMQ
F7400
5962-00B0210Q9A 4/
5962-00B0211Q_C 3/
MM0-G2091xxxMQ
F7400
F7400
5962-00B0212Q9A 4/
5962-00B0213Q_C 3/
F7400
F7400
MG2360
MM0-G2360xxxMQ
F7400
5962-00B0215Q9A 4/
5962-00B0216Q_C 3/
MG2265
MM0-G2265xxxMQ
5962-00B0214Q9A 4/
5962-00B0215Q_C 3/
MG2194
MM0-G2194xxxMQ
5962-00B0213Q9A 4/
5962-00B0214Q_C 3/
MG2140
MM0-G2140xxxMQ
5962-00B0211Q9A 4/
5962-00B0212Q_C 3/
MG2091
MG2480
MM0-G2480xxxMQ
F7400
MG2M044E
5962-00B0216V_C 3/
MG2M044E
5962-00B0216Q9A 4/
MM0-G2M044EHxxxMQ
5962-00B0216V9A 4/
SM0-G2M044EHxxxSV
5962-00B0217Q_C 3/
F7400
MG2M091E
5962-00B0217V_C 3/
MG2M091E
5962-00B0217Q9A 4/
MM0-G2M091EHxxxMQ
5962-00B0217V9A 4/
SM0-G2M091EHxxxSV
5962-00B0218Q_C 3/
F7400
MG2M140E
5962-00B0218V_C 3/
MG2M140E
5962-00B0218Q9A 4/
MM0-G2M140EHxxxMQ
5962-00B0218V9A 4/
SM0-G2M140EHxxxSV
5962-00B0219Q_C 3/
F7400
MG2M194E
5962-00B0219V_C 3/
MG2M194E
5962-00B0219Q9A 4/
MM0-G2M194EHxxxMQ
5962-00B0219V9A 4/
SM0-G2M194EHxxxSV
5962-00B0220Q_C 3/
F7400
MG2M265E
5962-00B0220V_C 3/
MG2M265E
5962-00B0220Q9A 4/
MM0-G2M265EHxxxMQ
5962-00B0220V9A 4/
SM0-G2M265EHxxxSV
5962-00B0221Q_C 3/
F7400
MG2M360E
5962-00B0221V_C 3/
MG2M360E
5962-00B0221Q9A 4/
MM0-G2M360EHxxxMQ
5962-00B0221V9A 4/
SM0-G2M360EHxxxSV
Standard
microcircuit drawing
PIN 1/
5962-00B0222Q_C 3/
Vendor
CAGE
number
F7400
Vendor
similar
PIN 2/
MG2M480E
5962-00B0222V_C 3/
MG2M480E
5962-00B0222Q9A 4/
MM0-G2M480EHxxxMQ
5962-00B0222V9A 4/
SM0-G2M480EHxxxSV
5962-00B0223Q_C 3/
F7400
5962-00B0223Q9A 4/
5962-00B0224Q_C 3/
MM0-G2M044xxxMQ
F7400
F7400
F7400
5962-00B0226Q9A 4/
5962-00B0227Q_C 3/
F7400
5962-00B0229Q9A 4/
MG2M265
MM0-G2M265xxxMQ
F7400
5962-00B0228Q9A 4/
5962-00B0229Q_C 3/
MG2M194
MM0-G2M194xxxMQ
5962-00B0227Q9A 4/
5962-00B0228Q_C 3/
MG2M140
MM0-G2M140xxxMQ
5962-00B0225Q9A 4/
5962-00B0226Q_C 3/
MG2M091
MM0-G2M091xxxMQ
5962-00B0224Q9A 4/
5962-00B0225Q_C 3/
MG2M044
MG2M360
MM0-G2M360xxxMQ
F7400
MG2M480
MM0-G2M480xxxMQ
1/ The lead finish shown for each PIN representing a hermetic package is the most readily available
from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to
determine its availability.
2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Due to the nature of this SMD, the standard microcircuit drawing PIN and corresponding vendor
similar PIN shall be specified in the AID.
4/ The “xxx” is reserved to indicate the customer specific code.
Vendor CAGE
number
F7400
Vendor name
and address
Atmel Nantes S.A.
Part of Atmel Wireless & Microcontrollers
La Chantrerie
BP 70602
44306 Nantes Cedex 03
France
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.