www.fairchildsemi.com KA5S-SERIES KA5S0765C/KA5S0965/KA5S12656/KA5S1265 Fairchild Power Switch(FPS) Features • • • • • • • • • • • • • TO-220-5L Wide Operating Frequency Range Up to 150kHz Lowest Cost SMPS Solution Lowest External Components Low Start-up Current (Max:170µA) Low Operating Current (Max:12mA) Internal High Voltage SenseFET Over Voltage Protection With Latch Mode (Min23V) Over Load Protection With Latch Mode Over Current Protection With Latch Mode Internal Thermal Protection With Latch Mode Pulse By Pulse Over Current Limiting Under Voltage Lockout With Hysteresis External Sync. Terminal 1 TO-3P-5L 1 1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync. Internal Block Diagram VCC Drain 3 1 VCC UVLO Bias + Vref 15/9V Soft Start & Sync 2.5V - 5 OSC Vth.sy VREF UVLO + - SenseFET CLK + VREF 7V 6V Feedback 4 S Q 0.95mA 2.5V R VREF VCC R + Voffset VS 4µA OLP (Vfb=7.5V) S 1µs Window Open Circuit TSD (Tj=160°C) OVP (VCC=25V) OCP (VS=1.1V) Q R Shutdown Latch Rsense 2 GND Power-on Reset (VCC=6.5V) Rev.1.0.5 ©2003 Fairchild Semiconductor Corporation KA5S-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VDGR 650 V VGS ±30 V KA5S0765C Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) (3) Single Pulsed Avalanch Current (Energy (2) ) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. IDM 28 ADC ID 7.0 ADC ID 5.6 ADC IAS(EAS) 27(570) A(mJ) VCC,MAX 30 V VFB -0.3 to VCC V VSS -0.3 to 8 V PD (Watt H/S) 140 W Darting 1.11 W/°C TJ +160 °C TA -25 to +85 °C TSTG -55 to +150 °C VDGR 650 V KA5S0965 Drain-Gate Voltage(RGS=1MΩ) VGS ±30 V Pulsed(1) IDM 36 ADC Continuous Drain Current (Tc = 25°C) ID 9.0 ADC Gate-Source(GND) Voltage Drain Current ID 5.8 ADC Single Pulsed Avalanch Current(3)(Energy (2)) IAS(EAS) 25(950) A(mJ) Maximum Supply Voltage VCC,MAX 30 V VFB -0.3 to VCC V VSS -0.3 to 8 V Continuous Drain Current (Tc = 100°C) Input Voltage Range PD (Watt H/S) 170 W Darting 1.33 W/°C Operating Junction Temperature. TJ +160 °C Operating Ambient Temperature. TA -25 to +85 °C TSTG -55 to +150 °C Total Power Dissipation Storage Temperature Range. 2 KA5S-SERIES Absolute Maximum Ratings (Continued) (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit VDGR 650 V VGS ±30 V IDM 48 ADC ID 12 ADC ID 8.4 ADC IAS(EAS) 25(785) A(mJ) VCC,MAX 30 V KA5S12656 Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) (3) Single Pulsed Avalanch Current (Energy (2) ) Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. VFB -0.3 to VCC V VSS -0.3 to 8 V PD (Watt H/S) 160 W Darting 1.28 W/°C TJ +160 °C TA -25 to +85 °C TSTG -55 to +150 °C VDGR 650 V KA5S1265 Drain-Gate Voltage(RGS=1MΩ) VGS ±30 V Pulsed(1) IDM 48 ADC Continuous Drain Current (Tc = 25°C) ID 12 ADC Gate-Source(GND) Voltage Drain Current ID 8.4 ADC Single Pulsed Avalanch Current(3)(Energy (2)) IAS(EAS) 42(785) A(mJ) Maximum Supply Voltage VCC,MAX 30 V VFB -0.3 to VCC V VSS -0.3 to 8 V Continuous Drain Current (Tc = 100°C) Input Voltage Range PD (Watt H/S) 160 W Darting 1.28 W/°C Operating Junction Temperature. TJ +160 °C Operating Ambient Temperature. TA -25 to +85 °C TSTG -55 to +150 °C Total Power Dissipation Storage Temperature Range. Note: 1. Repetitive rating : Pulse width limited by maximum junction temperature 2. L = 10mH, VDD =50V, RG = 27Ω, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C 3 KA5S-SERIES Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit 650 - - V VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA RDS(on) VGS=10V, ID=4.0A - 1.25 1.6 Ω gfs VDS=15V, ID=4.0A 3.0 - - S - 1600 - KA5S0765C Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance(1) Forward Transconductance (1) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn on Delay Time td(on) Rise Time Turn Off Delay Time Fall Time VGS=0V, ID=50µA tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=0.5B VDSS, ID=7.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - 310 - - 120 - - 25 - - 55 - - 80 - - 50 - - - 72 - 9.3 - - 29.3 - 650 - - V pF nS nC KA5S0965 Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance(1) Forward Transconductance(1) Input Capacitance - - 50 µA - - 200 µA RDS(on) VGS=10V, ID=4.5A - 0.96 1.2 Ω gfs VDS=50V, ID=4.5A 5.0 - - S - 1750 - Ciss Coss Reverse Transfer Capacitance Crss Turn on Delay Time td(on) Turn Off Delay Time Fall Time 4 VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C Output Capacitance Rise Time VGS=0V, ID=50µA tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=0.5B VDSS, ID=9.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - 190 - - 78 - - 20 50 - 23 55 - 85 180 - 30 70 - 74 95 - 12 - - 35 - pF nS nC KA5S-SERIES Electrical Characteristics (SFET Part) (Continued) (Ta = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit 650 - - V VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA RDS(on) VGS=10V, ID=6.0A - 0.72 0.9 Ω gfs VDS=50V, ID=4.0A 5.7 - - S - 2700 - KA5S12656 Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source On Resistance(1) Forward Transconductance (1) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn on Delay Time td(on) Rise Time Turn Off Delay Time Fall Time VGS=0V, ID=50µA tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=0.5B VDSS, ID=12.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - 300 - - 61 - - 18 - - 37 - - 88 - - 36 - - - 140 - 20 - - 69 - 650 - - V pF nS nC KA5S1265 Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance(1) Forward Transconductance(1) Input Capacitance VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA RDS(on) VGS=10V, ID=6.0A - 0.72 0.9 Ω gfs VDS=50V, ID=4.0A 5.7 - - S - 2700 - Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn on Delay Time td(on) Rise Time Turn Off Delay Time Fall Time VGS=0V, ID=50µA tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=12.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - 300 - - 61 - - 18 - - 37 - - 88 - - 36 - - - 140 - 20 - - 69 - pF nS nC Note: 1. Pulse Test : Pulse width ≤ 300uS, Duty Cycle ≤ 2% 2.MOSFET switching time is essentially independent of operating temperature 13. S = --R 5 KA5S-SERIES Electrical Characteristics (Control Part) (Continued) (VCC=16V, Tamb = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8 9 10 V 18 20 22 kHz OSCILLATOR SECTION Initial Frequency FOSC Voltage Stability - FSTABLE 12V ≤ VCC ≤ 23V 0 1 3 % Temperature Stability (Note2) ∆FOSC -25°C ≤ Τa≤ 85°C 0 ±5 ±10 % Maximum Duty Cycle DMAX - 92 95 98 % Minimum Duty Cycle DMIN - - - 0 % FEEDBACK SECTION Feedback Source Current IFB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage VSD VFB ≥ 6.9V 6.9 7.5 8.1 V IDELAY VFB=5V 3.0 4.0 5.0 µA VSS VFB=2V 4.7 5.0 5.3 V ISS VSS=0V Shutdown Delay Current SYNC. & SOFTSTART SECTION Softstart Voltage 0.75 0.95 1.15 mA Sync High Threshold Voltage(Note3) VSYNCH VCC=16V , VFB=5V - 7.0 - V Sync Low Threshold Voltage(Note3) VSYNCL VCC=16V , VFB=5V - 6.0 - V KA5S0765C 3.52 4.0 4.48 KA5S0965 5.28 6.0 6.72 KA5S12656 5.28 6.0 6.72 KA5S1265 7.04 8.0 8.96 VCC ≥ 24V 23 25 28 Softstart Current CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note4) IOVER A PROTECTION SECTION Over Voltage Protection VOVP Over Current Latch voltage(Note3) VOCL - 0.9 1.0 1.1 V Thermal Shutdown Tempature(Note2) TSD - 140 160 - °C - 0.1 0.17 mA - 7 12 mA V TOTAL DEVICE SECTION Start Up Current Operating Supply Current(Note1) ISTART VFB=GND, VCC=14V IOP VFB=GND, VCC=16V IOP(MIN) VFB=GND, VCC=12V IOP(MAX) VFB=GND, VCC=30V Note: 1. These parameters are the current flowing in the control IC. 2. These parameters, although guaranteed, are not 100% tested in mass production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor current. 6 KA5S-SERIES Typical Performance Characteristics 0.12 Istart(mA) 0.09 10.0 0.06 8.0 0.03 6.0 0.00 4.0 -25 0 25 50 75 100 125 150 Temp(℃) -25 Figure 1. Start Up Current vs. Temp. 9.30 Iop(mA) 12.0 VVstop(V) STOP 25 50 75 100 125 150 Temp(℃) Figure 2. Operating Supply Current vs. Temp. Vstart(V) 15.6 9.00 15.3 8.70 15.0 8.40 14.7 8.10 0 14.4 -25 0 25 50 75 100 125 150 Temp(℃) Figure 3. Stop Threshold Voltage vs. Temp -25 0 25 50 75 100 125 150 Temp(℃) Figure 4. Start Threshold Voltage vs. Temp Fosc(kHz) 19.8 19.1 18.4 17.7 17.0 -25 0 25 50 75 100 125 150 Temp(℃) Figure 5. Initial Frequency VS. Temp 7 KA5S-SERIES Typical Performance Characteristics (Continued) 98.0 Dmax(%) Ifb(mA) 1.10 96.5 1.00 95.0 0.90 93.5 0.80 92.0 0.70 -25 0 25 50 75 100 125 150 Temp(℃) Figure 6. Maximum Duty vs. Temp. -25 25 50 75 100 125 150 Temp(℃) Figure 7. Feedback Source Current vs. Temp. Idelay(uA) Vsd(V) 7.55 0 3.90 7.50 3.70 7.45 3.50 7.40 7.35 3.30 -25 0 25 50 75 100 -25 125 150 Temp(℃) Vovp(V) 25.9 4.10 25.2 4.00 24.5 3.90 75 100 125 150 Temp(℃) 3.80 -25 0 25 50 75 100 125 150 Temp(℃) Figure 10. Over Voltage Protection vs. Temp. 8 50 Iover(A) 4.20 23.8 25 Figure 9. Shutdown Delay Current vs. Temp. Figure 8. Shutdown Feedback Voltage vs. Temp. 26.6 0 -25 0 25 50 75 100 125 150 Temp(℃) Figure 11. Peak Current Limit vs. Temp KA5S-SERIES Typical Performance Characteristics (Continued) Iss(mA) Vss(V) 5.10 1.0 5.05 1.0 5.00 0.9 4.95 0.8 4.90 -25 0 25 50 75 100 125 150 Temp(℃) Figure 12. Soft Start Current vs. Temp. -25 0 25 50 75 100 125 150 Temp(℃) Figure 13. Soft Start Voltage vs. Temp. 9 KA5S-SERIES Package Dimensions TO-3P-5L 10 KA5S-SERIES Package Dimensions (Continued) TO-3P-5L(Forming) 11 KA5S-SERIES Package Dimensions (Continued) TO-220-5L 12 KA5S-SERIES Package Dimensions (Continued) TO-220-5L(Forming) 13 KA5S-SERIES TOP Mark and Pinout Information F M AR KI NG Y Y WW 1 2 3 4 5 Device Pin No. Symbol 1 Drain SenseFET Drain 2 GND Ground (Source) 3 VCC Control Part Supply Input 4 F/B PWM Non Inverting Input 5 S/S Soft start & External Sync. Marking KA5S0765C 5S0765C KA5S0965 5S0965 KA5S12656 5S12656 KA5S1265 5S1265 Notes ; (1) F ; Fairchild Semiconductor (2) 5S0765C, 5S0965, 5S12656, 5S1265; Device Marking Name (3) YY: Last Two Digit of Calender Year (4) WW: Patweek Based on Fairchild Semiconductor Work Month Calender 14 Description KA5S-SERIES Ordering Information Product Number KA5S0765CTU KA5S0765CYDTU KA5S0965TU KA5S0965YDTU KA5S12656TU KA5S12656YDTU KA5S1265TU KA5S1265YDTU Package TO-220-5L TO-220-5L(Forming) TO-3P-5L TO-3P-5L(Forming) TO-3P-5L TO-3P-5L(Forming) TO-3P-5L TO-3P-5L(Forming) Marking Code BVdss Rds(on) 5S0765C 650V 1.6Ω 5S0965 650V 1.2Ω 5S12656 650V 0.9Ω 5S1265 650V 0.9Ω TU : Non Forming Type YDTU : Forming Type 15 KA5S-SERIES DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 8/25/03 0.0m 001 2003 Fairchild Semiconductor Corporation