ABB 5SGA06D4502

VDRM
ITGQM
ITSM
VT0
rT
VDclink
=
=
=
=
=
=
4500
600
3×103
1.9
3.5
2800
V
A
A
V
mW
V
Asymmetric Gate turn-off
Thyristor
5SGA 06D4502
PRELIMINARY
Doc. No. 5SYA1236-00 Jun. 04
· Patented free-floating silicon technology
· Low on-state and switching losses
· Central gate electrode
· Industry standard housing
· Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Repetitive peak off-state
voltage
VDRM
Repetitive peak reverse
voltage
VRRM
Permanent DC voltage for
100 FIT failure rate
VDclink
min
typ
VGR ³ 2 V
Ambient cosmic radiation at sea level
in open air.
max
Unit
4500
V
17
V
2800
V
max
Unit
Characteristic values
Parameter
Symbol Conditions
min
typ
Repetitive peak off-state
current
IDRM
VD = VDRM, VGR ³ 2 V
20
mA
Repetitive peak reverse
current
IRRM
VR = VRRM, RGK = ¥ W
50
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
Mounting force
Fm
min
typ
max
Unit
10
11
12
kN
min
typ
max
Unit
Characteristic values
Parameter
Symbol Conditions
Pole-piece diameter
Dp
Housing thickness
H
Weight
m
Surface creepage distance
Ds
± 0.1 mm
34
mm
26
mm
0.25
Anode to Gate
30
Air strike distance
Da
Anode to Gate
20.5
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
kg
mm
mm
5SGA 06D4502
GTO Data
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
Max. average on-state
current
IT(AV)M
Max. RMS on-state current
IT(RMS)
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
ITSM
Limiting load integral
I2t
min
typ
Half sine wave, TC = 85 °C
max
Unit
210
A
330
A
3
A
3
A2s
3.1×10
tp = 8.3 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
40×10
3
tp = 10 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
3×10
3
45×10
3
tp = 1 ms, Tvj = 125°C, sine wave
After Surge: VD = VR = 0 V
6×10
3
A
A2s
A
18×10
A2s
max
Unit
4
V
Characteristic values
Parameter
Symbol Conditions
On-state voltage
VT
IT = 600 A, Tvj = 125°C
min
typ
Threshold voltage
V(T0)
1.9
V
Slope resistance
rT
Tvj = 125°C
IT = 200...600 A
3.5
mW
Holding current
IH
Tvj = 25°C
20
A
max
Unit
400
A/µs
600
A/µs
Turn-on switching
Maximum rated values
1)
Parameter
Symbol Conditions
Critical rate of rise of onstate current
diT/dtcr
Critical rate of rise of onstate current
diT/dtcr
Min. on-time
ton
min
Tvj = 125°C,
IT = 600 A, IGM = 20 A,
f = 200 Hz
diG/dt = 20 A/µs
f = 1 Hz
typ
80
µs
Characteristic values
Parameter
Symbol Conditions
Turn-on delay time
td
Rise time
tr
Turn-on energy per pulse
Eon
min
typ
VD = 0.5 VDRM, Tvj = 125 °C
IT = 600 A, di/dt = 200 A/µs,
IGM = 20 A, diG/dt = 20 A/µs,
CS = 1 µF, RS = 10 W
max
Unit
1.5
µs
3
µs
0.8
J
max
Unit
600
A
£ 650
V
Turn-off switching
Maximum rated values
1)
Parameter
Symbol Conditions
Max. controllable turn-off
current
ITGQM
VDM £ VDRM, VD = 0.5 VDRM
Spike Voltage
VDSP
diGQ/dt = 20 A/µs, CS = 1 µF,
LS £ 0.15 µH, RCD Snubber
Min. off-time
toff
min
typ
80
µs
Characteristic values
Parameter
Symbol Conditions
Storage time
tS
Turn-on energy per pulse
Eoff
VD = 0.5 VDRM, Tvj = 125 °C
VDM £ VDRM, diGQ/dt = 20 A/µs,
ITGQ = ITGQM,
RS = 10 W, CS = 1 µF, LS = 0.15 µH
Fall time
tf
Peak turn-off gate current
IGQM
RCD Snubber
min
typ
max
Unit
15
µs
5
µs
1.9
J
300
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04
page 2 of 5
5SGA 06D4502
Gate
Maximum rated values
1)
Parameter
Symbol Conditions
Repetitive peak reverse
voltage
VGRM
Repetitive peak reverse
current
IGRM
min
typ
max
Unit
17
V
20
mA
max
Unit
VGR = VGRM
Characteristic values
Parameter
Symbol Conditions
Gate trigger voltage
VGT
Gate trigger current
IGT
Thermal
Maximum rated values
min
Tvj = 25°C,
VD = 24 V, RA = 0.1 W
typ
1
V
2
A
1)
Parameter
Symbol
Conditions
min
typ
max
Unit
Junction operating temperature
Tvj
0
125
°C
Storage temperature range
Tstg
0
125
°C
max
Unit
Characteristic values
Parameter
Symbol
Thermal resistance junction to case
Thermal resistance case to heatsink
(Double side cooled)
Conditions
min
typ
Rth(jc)
Double side cooled
50
K/kW
Rth(jc)A
Anode side cooled
85
K/kW
Rth(jc)C
Cathode side cooled
122
K/kW
Rth(ch)
Single side cooled
16
K/kW
Rth(ch)
Double side cooled
8
K/kW
Analytical function for transient thermal
impedance:
n
ZthJC(t) = å Ri(1 - e -t/t i )
i =1
i
1
2
3
4
Ri(K/kW)
15.000
5.200
7.500
0.100
ti(s)
0.4610
0.0950
0.0120
0.0010
Fig. 1 Transient thermal impedance, junction to
case.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04
page 3 of 5
5SGA 06D4502
Fig. 2 General current and voltage waveforms with GTO-specific symbols.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04
page 4 of 5
5SGA 06D4502
Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation :
VGR = 10…15 V.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
[email protected]
www.abb.com/semiconductors
Doc. No. 5SYA1236-00 Jun. 04