VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V, Tvj ≥ 25 °C 1700 V IC Tc = 80 °C 1800 A Peak collector current ICM tp = 1 ms, Tc = 80 °C 3600 A 20 V 11000 W 1800 A 3600 A 16500 A 10 µs 4000 V 150 °C Total power dissipation DC forward current Peak forward current Surge current VGES Ptot -20 Tc = 25 °C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 1200 V, VCEM CHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 °C Case temperature Tc -40 125 °C Storage temperature Tstg -40 125 °C Mounting torques 2) min DC collector current Gate-emitter voltage 1) VCES Conditions 2) M1 Base-heatsink, M6 screws 4 6 M2 Main terminals, M8 screws 8 10 M3 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 1800E170100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 1700 Collector-emitter 4) saturation voltage VCE sat IC = 1800 A, VGE = 15 V Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance Lσ CE Resistance, terminal-chip RCC’+EE’ 3) 4) typ max Unit V Tvj = 25 °C 2.0 2.3 2.6 V Tvj = 125 °C 2.3 2.6 2.9 V 12 mA 120 mA -500 500 nA 4.5 6.5 V Tvj = 25 °C Tvj = 125 °C 50 IC = 1800 A, VCE = 900 V, VGE = -15 V .. 15 V 15.1 µC 166 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C 16.5 nF 6.98 VCC = 900 V, IC = 1800 A, RG = 0.82 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load Tvj = 25 °C 290 Tvj = 125 °C 300 Tvj = 25 °C 230 Tvj = 125 °C 250 VCC = 900 V, IC = 1800 A, RG = 0.82 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load Tvj = 25 °C 920 Tvj = 125 °C 1000 Tvj = 25 °C 215 Tvj = 125 °C 230 VCC = 900 V, IC = 1800 A, VGE = ±15 V, RG = 0.82 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C 380 Tvj = 125 °C 550 VCC = 900 V, IC = 1800 A, VGE = ±15 V, RG = 0.82 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C 560 Tvj = 125 °C 700 ns ns ns ns mJ mJ tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 1200 V, VCEM CHIP ≤ 1700 V 8500 A 10 nH TC = 25 °C 0.06 TC = 125 °C 0.085 mΩ Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 2 of 9 5SNA 1800E170100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol Conditions VF IF = 1800 A Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) VCC = 900 V, IF = 1800 A, VGE = ±15 V, RG = 0.82 Ω Lσ = 60 nH inductive load Erec min typ max Tvj = 25 °C 1.4 1.65 2.0 Tvj = 125 °C 1.4 1.7 2.0 Tvj = 25 °C 1140 Tvj = 125 °C 1460 Tvj = 25 °C 440 Tvj = 125 °C 780 Tvj = 25 °C 590 Tvj = 125 °C 890 Tvj = 25 °C 310 Tvj = 125 °C 540 Unit V A µC ns mJ Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Thermal properties Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.009 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W Thermal resistance case to heatsink 2) 2) Conditions min per module, λ grease = 1W/m x K Rth(c-h) typ max 0.006 Unit K/W For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Symbol Dimensions LxW x Conditions H Typical , see outline drawing min max 190 x 140 x 38 Clearance distance DC according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 23 Surface creepage distance DSC according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 33 Weight typ Unit mm mm 19 mm 32 1380 g ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 3 of 9 5SNA 1800E170100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 4 of 9 5SNA 1800E170100 3600 3600 3200 3200 VGE = 25 V 25 °C 2800 2800 2400 2400 2000 2000 IC [A] IC [A] 125 °C 1600 1600 1200 1200 800 800 400 400 125 °C 25 °C VGE = 15 V 0 0 0 1 2 3 4 5 0 1 2 3 4 VCE [V] Fig. 1 6 7 8 Fig. 2 Typical on-state characteristics, chip level 10 11 12 Typical transfer characteristics, chip level 3600 3200 17V 3200 2800 15V 2800 17V 15V 13V 2400 13V 2400 11V 2000 11V IC [A] 9V 1600 2000 1200 800 800 400 9V 1600 1200 400 Tvj = 25 °C Tvj = 125 °C 0 0 0 1 2 3 4 5 6 0 VCE [V] Fig. 3 9 VGE [V] 3600 IC [A] 5 Typical output characteristics, chip level 1 2 3 4 5 6 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 5 of 9 5SNA 1800E170100 2.0 3 VCC = 900 V RG = 0.82 ohm VGE = ±15 V Tvj = 125 °C Lσ = 60 nH 1.5 2.5 Eoff 1.0 Eon 2 Eon, E off [J] Eon, E off [J] VCC = 900 V IC = 1800 A VGE = ±15 V Tvj = 125 °C Lσ = 60 nH Eon 1.5 Eoff 1 0.5 0.5 E sw [J] = 1.6 x 10 -7 x I C 2 + 2.6 x 10 -4 x I C + 0.27 0.0 0 0 1000 2000 3000 4000 0 2 IC [A] Fig. 5 6 8 RG [ohm] Typical switching energies per pulse vs collector current Fig. 6 10 Typical switching energies per pulse vs gate resistor 10 VCC = 900 V RG = 0.82 ohm VGE = ±15 V Tvj = 125 °C Lσ = 60 nH VCC = 900V IC = 1800 A VGE = ±15 V Tvj = 125 °C Lσ = 60 nH td(on),tr, t d(off), t f [µs] td(on), t r, t d(off), t f [µs] 4 td(off) 1 td(off) 1 tr td(on) tf td(on) tf tr 0.1 0.1 0 1000 2000 3000 0 4000 Typical switching times vs collector current 4 6 8 RG [ohm] IC [A] Fig. 7 2 Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 6 of 9 5SNA 1800E170100 1000 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV VCC = 900 V Cies 15 100 VGE [V] C [nF] VCC = 1300 V Coes 10 10 Cres 5 IC = 1800 A Tvj = 25 °C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 2 4 6 8 Qg [µC] 10 12 14 Typical gate charge characteristics 2.5 VCC ≤ 1200 V, Tvj = 125 °C VGE = ±15 V, RG = 0.82 ohm 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 500 1000 VCE [V] 1500 2000 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 7 of 9 5SNA 1800E170100 800 900 1600 Irr 700 1800 800 1400 1600 Irr 700 200 300 Erec 200 400 100 100 200 E rec [mJ] = -6 x 10 -5 x I F 2 + 0.371 x I F + 65 0 1000 2000 3000 2 4000 Irr [A] RG = 0.56 ohm RG = 0.82 ohm 600 400 VCC = 900 V IF = 1800 A Tvj = 125 °C Lσ = 60 nH 200 3 4 5 6 7 8 9 10 di/dt [kA/µs] Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 3600 4000 3200 3600 VCC ≤ 1200 V di/dt ≤ 9000 A/µs Tvj = 125 °C 3200 25°C 2800 800 0 1 IF [A] Fig. 12 1000 0 0 0 RG = 1.5 ohm 400 RG = 2.2 ohm 600 VCC = 900 V RG = 0.82 ohm Tvj = 125 °C Lσ = 60 nH Erec 500 RG = 3.9 ohm 300 1200 Qrr RG = 5.6 ohm 800 600 RG = 6.8 ohm 400 1000 Erec [mJ], Q rr [µC] Qrr 500 Erec [mJ] 1400 1200 Qrr [µC], Irr [A] 600 125°C 2800 2400 IR [A] IF [A] 2400 2000 2000 1600 1600 1200 1200 800 800 400 400 0 0 0 0.5 1 1.5 2 0 2.5 VF [V] Fig. 14 Typical diode forward characteristics, chip level 500 1000 1500 2000 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1554-03 Nov. 04 page 8 of 9 5SNA 1800E170100 0.1 n Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) Zth(j-c) Diode 0.01 i =1 0.001 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 6.24 1.73 0.704 0.345 τi(ms) 192 20.4 1.97 0.52 DIODE Zth(j-h) [K/W] IGBT, DIODE Analytical function for transient thermal impedance: Ri(K/kW) 11.6 2.91 1.28 1.27 τi(ms) 204 29.3 6.96 1.5 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA 1554-03 Nov. 04