UNISONIC TECHNOLOGIES CO., LTD 70N06 MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. 1 TO-220F FEATURES *Pb-free plating product number: 70N06L * RDS(ON) = 15mΩ@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Normal Lead Free Plating 70N06-TA3-T 70N06L-TA3-T 70N06-TF3-T 70N06L-TF3-T Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 70N06L-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., LTD 1 of 8 QW-R502-089,A 70N06 MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 60 V ±20 V TC = 25℃ 70 A Continuous Drain Current ID TC = 100℃ 56 A Drain Current Pulsed (Note 1) IDM 280 A Single Pulsed Avalanche Energy (Note 2) EAS 600 mJ Repetitive Avalanche Energy (Note 1) EAR 20 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 10 V/ns Total Power Dissipation (TC = 25℃) 200 W PD 1.4 W/℃ Derating Factor above 25℃ ℃ Operation Junction Temperature TJ -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate to Source Voltage THERMAL DATA PARAMETER Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient SYMBOL θJC θCS θJA MIN TYP MAX 1.2 UNIT °C/W °C/W °C/W 0.5 62.5 ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient SYMBOL BVDSS TEST CONDITIONS VGS = 0 V, ID = 250 µA MIN Gate-Source Leakage Current Gate-Source Leakage Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) IDSS IGSS V 0.08 VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 150℃ VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V 1 µA 10 µA 100 -100 nA nA 4.0 V 15 mΩ VDS = VGS, ID = 250 µA RDS(ON) VGS = 10 V, ID = 35 A 12 CISS COSS CRSS VGS = 0 V, VDS = 25 V f = 1MHz 3300 530 80 pF pF pF 12 79 80 52 90 20 30 ns ns ns ns nC nC nC tD(ON) tR tD(OFF) tF QG QGS QGD VDD = 30V, ID =70 A, VGS=10V, (Note 4, 5) VDS = 60V, VGS = 10 V ID = 48A, (Note 4, 5) 2.0 V/℃ VGS(TH) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT 60 △BVDSS/△TJ ID = 1mA, Referenced to 25℃ Drain-Source Leakage Current TYP 140 35 45 2 of 8 QW-R502-089,A 70N06 MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN Source-Drain Diode Ratings and Characteristics Diode Forward Voltage VSD IS = 70A, VGS = 0 V Integral Reverse p-n Junction Diode in the MOSFET Continuous Source Current IS TYP MAX UNIT 1.4 V 70 D A Pulsed Source Current ISM 280 G S Reverse Recovery Time tRR IS = 70A, VGS = 0 V dIF / dt = 100 A/µs Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH, IAS=70A, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 90 300 ns µC 3 of 8 QW-R502-089,A 70N06 MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-089,A 70N06 MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VG 1mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RG 10V VDD D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IAS tp Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-089,A 70N06 MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics 14 VGS=10V 13 12 0 10 20 30 40 50 60 70 80 90 100 Drain Current, I D (A) 6000 Capacitance (pF) 1 50 °С 25 °С Note : 1 . VDS =25 V 2. 20µs Pulse Test 2 On-Resistance Variation vs. Drain Current and Gate Voltage 15 11 101 100 101 100 Drain-Source Voltage , VDS (V) 5000 4000 Capacitance Characteristics (Non-Repetitive) C ISS=C GS+CGD (CDS=shorted) C OSS =CDS+CGD C RSS=C GD C ISS 3000 2000 1000 COSS 0 CRSS *Note: 1. VGS=0V 2. f = 1MHz 102 150℃ 10 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25℃ *Note: 1. VGS=0V 2. 250µs Test 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSD (V) 1.6 Gate Charge Characteristics 12 10 8 VDS=38V 6 VDS=60V 4 2 0 5 10 15 20 25 30 35 Drain-Source Voltage, VDC (V) 3 5 7 9 10 4 6 8 Gate -Source Voltage , VGS (V) Reverse Drain Current vs. Allowable Case Temperature Reverse Drain Current, ISD (A) Drain-Source On-Resistance, RDS(ON) (mΩ) 100 -1 10 Drain Current, ID (A) 4 .5V 101 102 Gate-to-Source Voltage, VGS (V) Drain Current, ID (A) On -State Characteristics V GS Top : 15V 10 V 8 V 7 V 2 10 6 V 5 .5V 5V Bottorm : 4.5V 0 *Note: ID=48A 5 10 15 20 25 30 35 40 45 Total Gate Charge, Q G (nC) 6 of 8 QW-R502-089,A 70N06 MOSFET Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 *Note: 1. VGS=0V 2. ID=250µA 0.9 0.8 -100 -50 0 50 100 150 200 Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) TYPICAL CHARACTERISTICS 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Junction Temperature, T J (℃) 10ms 1ms DC *Note: 1. T c=25℃ 2. T J=150℃ 3. Single Pulse 1 10 100 1000 Drain-Source Voltage, VD (V) Drain Current, ID (A) Drain Current , ID,(A) 60 100µs 0.1 -50 0 50 100 150 Junction Temperature, T J (℃) 70 100 Operation in This Area by RDS (on) 1 *Note: 1. VGS=10V 2. I D=35A Maximum Drain Current vs. Case Temperature Maximum Safe Operating 10 On-Resistance Variation vs. Junction Temperature 50 40 30 20 10 0 25 50 100 125 75 Case Temperature, T C (℃) 150 Thermal Response, ZθJC (t) Transient Thermal Response Curve 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse *Note: 1. ZθJ C (t) = 0.88℃/W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC =PDM×ZθJ C (t) 10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration, t 1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-089,A 70N06 MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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