UNISONIC TECHNOLOGIES CO., LTD UTT30N06 Power MOSFET 30A, 60V N-CHANNEL POWER MOSFET 1 1 DESCRIPTION TO-220 The UTC UTT30N06 is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used in automotive applications of power supplies, high efficient DC to DC converters and battery operated products. 1 1 TO-252 TO-251 TO-252D FEATURES * RDS(ON) < 40mΩ@VGS = 10 V * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT30N06L-TA3-T UTT30N06G-TA3-T UTT30N06L-TM3-T UTT30N06G-TM3-T UTT30N06L-TN3-R UTT30N06G-TN3-R UTT30N06L-TND-R UTT30N06G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package TO-220 TO-251 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tape Reel Tape Reel 1 of 9 QW-R502-637.D UTT30N06 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-637.D UTT30N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 60 V ±20 V TC = 25°C 30 A Continuous ID Drain Current TC = 100°C 21.3 A Pulsed (Note 1) IDM 120 A 300 mJ Single Pulsed (Note 2) EAS Avalanche Energy Repetitive (Note 1) EAR 8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7.5 V/ns TO-220 89 Power Dissipation PD W TO-251/TO-252/TO-252D 44 Junction Temperature TJ +150 °C Operation Temperature TOPR -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C 4. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C SYMBOL VDSS VGSS THERMAL DATA PARAMETER TO-220 Junction to Ambient TO-251/TO-252/TO-252D TO-220 Junction to Case TO-251/TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 110 1.4 2.85 UNIT °C/W °C/W 3 of 9 QW-R502-637.D UTT30N06 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 μA 100 nA Forward VGS = 20V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25℃ 0.06 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 1.0 3.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 15 A 32 40 mΩ DYNAMIC CHARACTERISTICS 800 1000 pF Input Capacitance CISS VGS = 0 V, VDS = 25 V, Output Capacitance COSS 130 200 pF f = 1MHz Reverse Transfer Capacitance CRSS 80 100 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 35 70 ns Turn-On Rise Time tR 40 80 ns VDD = 30V, ID =1.0 A, VGS=10V (Note 1, 2) Turn-Off Delay Time tD(OFF) 220 280 ns Turn-Off Fall Time tF 100 120 ns Total Gate Charge QG 80 100 nC VDS = 60V, VGS = 10 V, Gate-Source Charge QGS 15 nC ID = 24A (Note 1, 2) Gate-Drain Charge QGD 50 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 30A, dIF / dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 40 70 30 A 120 A ns μC 4 of 9 QW-R502-637.D UTT30N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-637.D UTT30N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 1mA VG Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 6 of 9 QW-R502-637.D UTT30N06 TYPICAL CHARACTERISTICS Transfer Characteristics 4.5V 101 -1 10 101 10 Drain-Source Voltage, VDS (V) 0 150℃ 101 Note: 1. VDS=25V 2. 20µs Pulse Test 100 2 3 4 5 6 7 8 9 10 Gate-Source Voltage, VGS (V) Gate-to-Source Voltage, VGS (V) Reverse Drain Current, ISD (A) Drain-Source On-Resistance, RDS(ON) (mΩ) 100 102 25 ℃ VGS Top: 15V 10V 8V 7V 2 10 6V 5.5V 5V Bottorm: 4.5V Drain Current, ID (A) Drain Current, ID (A) On-State Characteristics Capacitance (pF) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 9 QW-R502-637.D UTT30N06 Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) TYPICAL CHARACTERISTICS(Cont.) Maximum Drain Current vs. Case Temperature Maximum Safe Operating 30 100µs 10 10ms 1ms DC 1 *Note: 1. Tc=25℃ 2. TJ=150℃ 3. Single Pulse 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 100 Operation in This Area by RDS (ON) Drain Current , ID,(A) Power MOSFET 20 10 0 25 50 75 100 125 150 Case Temperature, TC (℃) Transient Thermal Response Curve 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse *Note: 1. ZθJC (t) = 0.88℃/W Max. 2. Duty Factor, D=t1/t2 3. TJ -TC=PDM×ZθJC (t) 10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 9 QW-R502-637.D UTT30N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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