UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-262 FEATURES * RDS(ON) = 15mΩ@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability TO-220 DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. 1 1 TO-263 SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 70N06L-TA3-T 70N06G-TA3-T 70N06L-T2Q-T 70N06G-T2Q-T 70N06L-TQ2-T 70N06G-TQ2-T 70N06L-TQ2-R 70N06G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel 70N06L-TA3-T (1) Packing Type (1) R: Tape Reel, T: Tube (2) Package Type (2) TA3: TO-220, T2Q: TO-262, TQ2: TO-263 (3) Lead Plating (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-089.C 70N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TC = 25°C 70 A Continuous Drain Current ID TC = 100°C 56 A Drain Current Pulsed (Note 2) IDM 280 A Single Pulsed (Note 3) EAS 600 mJ Avalanche Energy Repetitive (Note 2) EAR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns Power Dissipation PD 200 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Repeativity rating: pulse width limited by junction temperature L=0.24mH, IAS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 1.2 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS IDSS IGSS VGS = 0 V, ID = 250 μA VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V MIN VGS(TH) RDS(ON) VDS = VGS, ID = 250 μA VGS = 10 V, ID = 35 A CISS COSS CRSS VGS = 0 V, VDS = 25 V f = 1MHz tD(ON) tR tD(OFF) tF QG QGS QGD VDD = 30V, VGS=10V,ID =70 A (Note 1, 2) VDS = 60V, VGS = 10 V, ID = 48A (Note 1, 2) TYP MAX UNIT 60 1 100 -100 △BVDSS/△TJ ID = 1mA, Referenced to 25°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS 0.08 2.0 12 V μA nA nA V/°C 4.0 15 V mΩ 3300 530 80 pF pF pF 12 79 80 52 90 20 30 ns ns ns ns nC nC nC 140 35 45 2 of 8 QW-R502-089.C 70N06 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 70A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 70A dIF / dt = 100 A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1.4 V 70 A 280 90 300 ns μC 3 of 8 QW-R502-089.C 70N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-089.C 70N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs tD(OFF) tF tR Duty Factor≤0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS 12V Same Type as D.U.T. 50kΩ 0.2μF QG 10V 0.3μF VDS QGS QGD VGS DUT 1mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS R VDD G 10V D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-089.C Gate-to-Source Voltage, VGS (V) Reverse Drain Current, ISD (A) Drain-Source On-Resistance, RDS(ON) (mΩ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 °С 1 50 °С Drain Current, ID (A) Drain Current, ID (A) Capacitance (pF) 70N06 Power MOSFET TYPICAL CHARACTERISTICS QW-R502-089.C 6 of 8 Drain Current, ID (A) Drain Current , ID,(A) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Thermal Response, ZθJC (t) 70N06 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R502-089.C 7 of 8 70N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-089.C