UNISONIC TECHNOLOGIES CO., LTD 9N90 Preliminary Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET 1 TO-247 DESCRIPTION The UTC 9N90 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-3P FEATURES * RDS(ON) = 1.4Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 45 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 14 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness 1 SYMBOL TO-220F 1 TO-220F1 2.Drain 1 1.Gate TO-220F2 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N90L-T47-T 9N90G-T47-T 9N90L-T3P-T 9N90G-T3P-T 9N90L-TF1-T 9N90G-TF1-T 9N90L-TF2-T 9N90G-TF2-T 9N90L-TF3-T 9N90G-TF3-T 9N90L-T47-T Package TO-247 TO-3P TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube (1) T: Tube (1)Packing Type (2)Package Type (3)Lead Free (2) T47: TO-247, T3P: TO-3P, TF1: TO-220F1, TF2: TO-220F2, TF3:TO-220F (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-217.H 9N90 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TC =25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TC = 25°C) Pulsed Drain Current (Note 2) Avalanche Current (Note 2) Single Pulsed(Note 3) Avalanche Energy Repetitive(Note 2) Peak Diode Recovery dv/dt (Note 4) TO-247 Power Dissipation TO-3P TO-220F1/ TO-220F TO-220F2 TO-247 Linear Derating Factor TO-3P above TC = 25°C TO-220F1/ TO-220F SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt PD RATINGS 900 ±30 9.0 36 9.0 900 28 4.0 160 UNIT V V A A A mJ mJ V/ns W 240 49 51 W 1.28 2.22 0.392 W/°C TO-220F2 0.408 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 21mH, IAS = 9.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤9.0A, di/dt ≤ 200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-247 TO-3P Junction to Ambient TO-220F1/ TO-220F TO-220F2 TO-247 TO-3P Junction to Case TO-220F1/ TO-220F TO-220F2 SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 50 40 62.5 62.5 0.78 0.52 2.55 2.45 UNIT °C/W °C/W 2 of 6 QW-R502-217.H 9N90 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250μA 900 V Drain-Source Leakage Current IDSS VDS = 900 V, VGS = 0 V 10 μA VGS = 30 V, VDS = 0 V 100 nA Forward IGSSF Gate-Body Leakage Current Reverse IGSSR VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.99 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 3.0 5.0 V Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 4.5A 1.05 1.4 Ω DYNAMIC PARAMETERS 2100 2730 pF Input Capacitance CISS VDS = 25 V, VGS = 0 V, Output Capacitance COSS 175 230 pF f = 1.0 MHz Reverse Transfer Capacitance CRSS 14 18 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 50 110 ns VDD = 450V, ID =11.0 A, Turn-On Rise Time tR 120 250 ns RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 100 210 ns Turn-Off Fall Time tF 75 160 ns Total Gate Charge QG 45 58 nC VDS = 720V, ID = 11.0A, Gate-Source Charge QGS 13 nC VGS = 10 V (Note 1,2) Gate-Drain Charge QGD 18 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 9.0 A 1.4 V Maximum Continuous Drain-Source Diode IS 9.0 A Forward Current Maximum Pulsed Drain-Source Diode ISM 36 A Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 9.0 A, 550 ns dIF / dt =100 A/μs (Note 1) Reverse Recovery Charge QRR 6.5 μC Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-217.H 9N90 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-217.H 9N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDD VDS(t) Time tP Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-217.H 9N90 Power MOSFET TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-217.H