INTEGRATED CIRCUITS 74F189A 64-bit TTL bipolar RAM, inverting (3-State) Product specification IC15 Data Handbook 1990 Feb 23 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) 74F189A are fully decoded on chip. The outputs are in high impedance state whenever the chip enable (CE) is high. The outputs are active only in the READ mode (WE = high) and the output data is the complement of the stored data. FEATURES • High speed performance • Replaces 74F189 • Address access time: 8ns max vs 28ns for 74F189 • Power dissipation: 4.3mW/bit • Schottky clamp TTL • One chip enable • Inverting outputs (for non-inverting outputs see 74F219A) • 3-State outputs • 74F189A in 150 mil wide SO is preferred options for new designs TYPE TYPICAL ACCESS TIME TYPICAL SUPPLY CURRENT ( TOTAL) 74F189A 5.0ns 55mA DESCRIPTION The 74F189A is a high speed, 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and ORDERING INFORMATION ORDER CODE DESCRIPTION COMMERCIAL RANGE DRAWING NUMBER VCC = 5V ±10%, Tamb = 0°C to +70°C 16-pin plastic Dual In-line Package N74F189AN SOT38-4 16-pin plastic Small Outline (150mil) N74F189AD SOT109-1 INPUT AND OUTPUT LOADING AND FAN OUT TABLE PINS DESCRIPTION 74F (U.L.) HIGH/LOW LOAD VALUE HIGH/LOW D0 – D3 Data inputs 1.0/1.0 20µA/0.6mA A0 – A3 Address inputs 1.0/1.0 20µA/0.6mA CE Chip enable input (active low) 1.0/2.0 20µA/1.2mA WE Write enable input (active low) 1.0/2.0 20µA/1.2mA Data outputs 150/40 3mA/24mA Q0 – Q3 NOTE: One (1.0) FAST unit load is defined as: 20µA in the high state and 0.6mA in the low state. PIN CONFIGURATION LOGIC SYMBOL 4 A0 1 16 V CC CE 2 15 A1 WE 3 14 A2 D0 4 13 A3 Q0 5 12 D3 D1 6 11 Q3 Q1 7 10 D2 GND 8 9 D0 D1 D2 D3 1 15 14 13 2 3 Q2 VCC = pin 16 GND = pin 8 SF00299 1990 Feb 23 6 10 12 A0 A1 A2 A3 CE WE Q0 Q1 Q2 Q3 5 7 9 11 SF00300 2 853–1309 98908 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) IEC/IEEE SYMBOL 1 15 FUNCTION TABLE 2 3 OUTPUT OPERATING CE INPUTS WE Dn Qn MODE L H X Complement of stored data Read L L L High impedance Write “0” H L H High impedance Write “1” H X X High impedance Disable input RAM 16X4 0 14 13 74F189A A 0 15 1 G1 1 EN [READ] 1 C2 [WRITE] 4 A,2D A 5 6 7 10 9 12 11 NOTES: H = High voltage level L = Low voltage level X = Don’t care SF00301 LOGIC DIAGRAM D0 D1 D2 D3 4 6 10 12 3 Data buffers A0 A1 A2 A3 2 WE CE 1 15 14 Decoder Drivers Address Decoder 13 16–word x 4–bit memory cell array Output buffers 5 VCC = Pin 16 GND = Pin 8 7 9 11 Q0 Q1 Q2 Q3 SF00302 ABSOLUTE MAXIMUM RATINGS (Operation beyond the limit set forth in this table may impair the useful life of the device. Unless otherwise noted these limits are over the operating free air temperature range.) SYMBOL PARAMETER RATING UNIT V VCC Supply voltage –0.5 to +7.0 VIN Input voltage –0.5 to +7.0 V IIN Input current –30 to +5 mA VOUT Voltage applied to output in high output state –0.5 to VCC V IOUT Current applied to output in low output state 48 mA Tamb Operating free air temperature range 0 to +70 °C Tstg Storage temperature range –65 to +150 °C 1990 Feb 23 3 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) 74F189A RECOMMENDED OPERATING CONDITIONS LIMITS SYMBOL PARAMETER UNIT MIN NOM MAX TA = –40 to +85°C 5.0 5.5 V VCC Supply voltage 4.5 VIH High–level input voltage 2.0 VIL Low–level input voltage 0.8 V V IIk Input clamp current –18 mA IOH High–level output current –3 mA IOL Low–level output current 24 mA +70 °C Tamb Operating free air temperature range 0 DC ELECTRICAL CHARACTERISTICS (Over recommended operating free-air temperature range unless otherwise noted.) SYMBOL TEST CONDITIONS1 PARAMETER LIMITS MIN VOH High-level output voltage VCC = MIN, VIL = MAX ±10%VCC 2.4 VIH = MIN, IOH = MAX ±5%VCC 2.7 VCC = MIN, VIL = MAX ±10%VCC VIH = MIN, IOL = MAX ±5%VCC TYP2 UNIT MAX V 3.4 V VOL Low-level output voltage VIK Input clamp voltage VCC = MIN, II = IIK II Input current at maximum input voltage VCC = MAX, VI = 7.0V IIH High–level input current VCC = MAX, VI = 2.7V 20 µA IIL Low–level input current VCC = MAX, VI = 0.5V -0.6 mA -1.2 mA others 0.35 0.50 V 0.35 0.50 V -0.73 -1.2 V 100 µA CE, WE IOZH Offset output current, high–level voltage applied VCC = MAX, VI = 2.7V 50 µA IOZL Offset output current, low–level voltage applied VCC = MAX, VI = 0.5V –50 µA IOS Short-circuit output current3 VCC = MAX -150 mA ICC Supply current (total) VCC = MAX, CE = WE = GND 55 80 mA CIN Input capacitance VCC = 5V, VIN = 2.0V 4 pF Output capacitance VCC = 5V, VOUT = 2.0V 7 pF COUT -60 NOTES: 1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type. 2. All typical values are at VCC = 5V, Tamb = 25°C. 3. Not more than one output should be shorted at a time. For testing IOS, the use of high-speed test apparatus and/or sample-and-hold techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting of a high output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any sequence of parameter tests, IOS tests should be performed last. 1990 Feb 23 4 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) 74F189A AC ELECTRICAL CHARACTERISTICS LIMITS Tamb = +25°C SYMBOL tPLH tPHL PARAMETER Access time tPZH tPZL tPHZ tPLZ Disable time CE to Qn tPZH tPZL Write recovery time tPHZ tPLZ Disable time WE to Qn TEST CONDITION Propagation delay An to Qn Enable time CE to Qn Enable time WE to Qn Tamb = 0°C to +70°C VCC = +5.0V CL = 50pF, RL = 500Ω VCC = +5.0V ± 10% UNIT CL = 50pF, RL = 500Ω MIN TYP MAX MIN MAX Waveform 1 2.5 2.0 5.0 4.5 8.0 8.0 2.5 2.0 8.0 8.0 ns Waveform 2 2.0 2.0 3.5 4.0 6.0 7.0 1.5 2.0 7.0 7.5 ns Waveform 3 2.5 1.5 4.5 3.0 7.0 5.5 2.0 1.5 8.0 6.0 ns Waveform 4 2.0 2.5 4.0 4.5 6.5 7.5 2.0 2.5 7.0 8.0 ns Waveform 4 3.5 1.5 5.5 3.5 8.5 6.5 3.0 1.5 9.0 7.0 ns AC SETUP REQUIREMENT LIMITS Tamb = +25°C SYMBOL PARAMETER TEST CONDITION VCC = +5.0V CL = 50pF, RL = 500Ω MIN TYP MAX Tamb = 0°C to +70°C VCC = +5.0V ± 10% UNIT CL = 50pF, RL = 500Ω MIN MAX tsu(H) tsu(L) Setup time, high or low An to WE Waveform 4 4.5 4.5 5.0 5.0 ns th(H) th(L) Hold time, high or low An to WE Waveform 4 0 0 0 0 ns tsu(H) tsu(L) Setup time, high or low Dn to WE Waveform 4 7.5 6.5 9.0 8.0 ns th(H) th(L) Hold time, high or low Dn to WE Waveform 4 0 0 0 0 ns tsu(L) Setup time, low CE (falling edge) to WE (falling edge) Waveform 4 0 0 ns th(L) Hold time, low WE (falling edge) to WE (rising edge) Waveform 4 6.5 7.5 ns tw(L) Pulse width, low WE Waveform 4 7.0 8.0 ns AC WAVEFORMS FOR READ CYCLES An VM tPHL Qn VM tPLH NOTE: For all waveforms, VM = 1.5V. SF00303 Waveform 1. Read cycle, address access time 1990 Feb 23 5 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) CE 74F189A VM tPZH Qn VM tPZL NOTE: For all waveforms, VM = 1.5V. SF00304 Waveform 2. Read cycle, chip enable access time CE VM tPHZ Qn VM tPLZ NOTE: For all waveforms, VM = 1.5V. SF00305 Waveform 3. Read cycle, chip disable time AC WAVEFORMS FOR WRITE CYCLE An VM VM tsu (H or L) Dn th (H or L) VM VM tsu ( L) CE VM th (H or L) VM VM tsu (H or L) th ( L) tw ( L) VM WE VM tPHZ tPZH Hi–Z Qn VM VM tPLZ NOTE: tPZL For all waveforms, VM = 1.5V. SF00306 Waveform 4. Write cycle 1990 Feb 23 6 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) 74F189A TEST CIRCUIT AND WAVEFORM VCC NEGATIVE PULSE VIN tw 90% VM D.U.T. RT CL RL AMP (V) VM 10% VOUT PULSE GENERATOR 90% 10% tTHL (tf ) tTLH (tr ) tTLH (tr ) tTHL (tf ) 0V AMP (V) 90% 90% POSITIVE PULSE DEFINITIONS: RL = Load resistor; see AC ELECTRICAL CHARACTERISTICS for value. CL = Load capacitance includes jig and probe capacitance; see AC ELECTRICAL CHARACTERISTICS for value. RT = Termination resistance should be equal to ZOUT of pulse generators. VM VM 10% Test Circuit for Totem-Pole Outputs 10% tw 0V Input Pulse Definition INPUT PULSE REQUIREMENTS family amplitude VM 74F 3.0V 1.5V rep. rate tw tTLH tTHL 1MHz 500ns 2.5ns 2.5ns SF00006 1990 Feb 23 7 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) DIP16: plastic dual in-line package; 16 leads (300 mil) 1990 Feb 23 8 74F189A SOT38-4 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) SO16: plastic small outline package; 16 leads; body width 3.9 mm 1990 Feb 23 9 74F189A SOT109-1 Philips Semiconductors Product specification 64-bit TTL bipolar RAM, inverting (3-State) 74F189A Data sheet status Data sheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. [1] Please consult the most recently issued datasheet before initiating or completing a design. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Disclaimers Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Copyright Philips Electronics North America Corporation 1998 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 print code Document order number: yyyy mmm dd 10 Date of release: 10-98 9397-750-05092