74HC1G32; 74HCT1G32 2-input OR gate Rev. 05 — 14 March 2008 Product data sheet 1. General description 74HC1G32 and 74HCT1G32 are high-speed Si-gate CMOS devices. They provide a 2-input OR function. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V. The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. The standard output currents are half those of the 74HC32 and 74HCT32. 2. Features n n n n n Symmetrical output impedance High noise immunity Low power dissipation Balanced propagation delays SOT353-1 and SOT753 package options 3. Ordering information Table 1. Ordering information Type number 74HC1G32GW Package Temperature range Name Description Version −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 −40 °C to +125 °C SC-74A plastic surface-mounted package; 5 leads SOT753 74HCT1G32GW 74HC1G32GV 74HCT1G32GV 4. Marking Table 2. Marking codes Type number Marking code 74HC1G32GW HG 74HCT1G32GW TG 74HC1G32GV H32 74HCT1G32GV T32 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate 5. Functional diagram 1 B 2 A Y 1 4 ≥1 4 2 mna165 mna164 Fig 1. Logic symbol Fig 2. IEC logic symbol B Y A mna166 Fig 3. Logic diagram 6. Pinning information 6.1 Pinning 74HC1G32 74HCT1G32 B 1 A 2 GND 3 5 VCC 4 Y 001aaf104 Fig 4. Pin configuration 6.2 Pin description Table 3. Pin description Symbol Pin Description B 1 data input B A 2 data input A GND 3 ground (0 V) Y 4 data output Y VCC 5 supply voltage 74HC_HCT1G32_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 2 of 11 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate 7. Functional description Table 4. Function table H = HIGH voltage level; L = LOW voltage level Inputs Output A B Y L L L L H H H L H H H H 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). [1] Symbol Parameter VCC supply voltage IIK input clamping current IOK Min Max Unit −0.5 +7.0 V VI < −0.5 V or VI > VCC + 0.5 V - ±20 mA output clamping current VO < −0.5 V or VO > VCC + 0.5 V - ±20 mA IO output current −0.5 V < VO < VCC + 0.5 V - ±12.5 mA ICC supply current - 25 mA IGND ground current −25 - mA Tstg storage temperature −65 +150 °C - 200 mW total power dissipation Ptot Conditions Tamb = −40 °C to +125 °C [2] [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] Above 55 °C the value of Ptot derates linearly with 2.5 mW/K. 9. Recommended operating conditions Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 74HC1G32 74HCT1G32 Unit Min Typ Max Min Typ Max 2.0 5.0 6.0 4.5 5.0 5.5 V input voltage 0 - VCC 0 - VCC V output voltage 0 - VCC 0 - VCC V VCC supply voltage VI VO Tamb ambient temperature ∆t/∆V input transition rise and fall rate −40 +25 +125 −40 +25 +125 VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - - 139 - - 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 74HC_HCT1G32_5 Product data sheet °C © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 3 of 11 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C. Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Typ Max Min Max VCC = 2.0 V 1.5 1.2 - 1.5 - V VCC = 4.5 V 3.15 2.4 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - V 74HC1G32 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VCC = 2.0 V - 0.8 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 V VI = VIH or VIL IO = −20 µA; VCC = 2.0 V 1.9 2.0 - 1.9 - V IO = −20 µA; VCC = 4.5 V 4.4 4.5 - 4.4 - V IO = −20 µA; VCC = 6.0 V 5.9 6.0 - 5.9 - V IO = −2.0 mA; VCC = 4.5 V 4.13 4.32 - 3.7 - V IO = −2.6 mA; VCC = 6.0 V 5.63 5.81 - 5.2 - V IO = 20 µA; VCC = 2.0 V - 0 0.1 - 0.1 V IO = 20 µA; VCC = 4.5 V - 0 0.1 - 0.1 V IO = 20 µA; VCC = 6.0 V - 0 0.1 - 0.1 V IO = 2.0 mA; VCC = 4.5 V - 0.15 0.33 - 0.4 V IO = 2.6 mA; VCC = 6.0 V - 0.16 0.33 - 0.4 V VI = VIH or VIL II input leakage current VI = VCC or GND; VCC = 6.0 V - - 1.0 - 1.0 µA ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 10 - 20 µA CI input capacitance - 1.5 - - - pF 74HCT1G32 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 µA 4.4 4.5 - 4.4 - V IO = −2.0 mA 4.13 4.32 - 3.7 - V VOL II LOW-level output voltage input leakage current VI = VIH or VIL; VCC = 4.5 V IO = 20 µA - 0 0.1 - 0.1 V IO = 2.0 mA - 0.15 0.33 - 0.4 V - - 1.0 - 1.0 µA VI = VCC or GND; VCC = 5.5 V 74HC_HCT1G32_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 4 of 11 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C. Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Min Typ Max Min Max Unit ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 10 - 20 µA ∆ICC additional supply current per input; VCC = 4.5 V to 5.5 V; VI = VCC − 2.1 V; IO = 0 A - - 500 - 850 µA CI input capacitance - 1.5 - - - pF 11. Dynamic characteristics Table 8. Dynamic characteristics GND = 0 V; tr = tf ≤ 6.0 ns. All typical values are measured at Tamb = 25 °C. For test circuit see Figure 6 Symbol Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Typ Max Min Max 74HC1G32 tpd propagation delay A and B to Y; see Figure 5 [1] VCC = 2.0 V; CL = 50 pF - 18 115 - 135 ns VCC = 4.5 V; CL = 50 pF - 8 23 - 27 ns VCC = 5.0 V; CL = 15 pF - 8 - - - ns - 7 20 - 23 ns - 19 - - - pF VCC = 6.0 V; CL = 50 pF CPD [2] power dissipation VI = GND to VCC capacitance 74HCT1G32 tpd CPD propagation delay A and B to Y; see Figure 5 [1] VCC = 4.5 V; CL = 50 pF - 10 24 - 27 ns VCC = 5.0 V; CL = 15 pF - 10 - - - ns - 20 - - - pF power dissipation VI = GND to VCC − 1.5 V capacitance [1] tpd is the same as tPLH and tPHL. [2] CPD is used to determine the dynamic power dissipation PD (µW). PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in V ∑ (CL × VCC2 × fo) = sum of outputs [2] 74HC_HCT1G32_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 5 of 11 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate 12. Waveforms VM A, B input tPLH tPHL VM Y output mna167 Fig 5. The input (A and B) to output (Y) propagation delays VCC PULSE GENERATOR VI VO DUT RT CL mna101 Measurement points are given in Table 8. Definitions for test circuit: CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to output impedance Zo of the pulse generator. Fig 6. Load circuitry for switching times 74HC_HCT1G32_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 6 of 11 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm E D SOT353-1 A X c y HE v M A Z 5 4 A2 A (A3) A1 θ 1 Lp 3 L e w M bp detail X e1 0 1.5 3 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(1) e e1 HE L Lp v w y Z(1) θ mm 1.1 0.1 0 1.0 0.8 0.15 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 1.3 2.25 2.0 0.425 0.46 0.21 0.3 0.1 0.1 0.60 0.15 7° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT353-1 REFERENCES IEC JEDEC JEITA MO-203 SC-88A EUROPEAN PROJECTION ISSUE DATE 00-09-01 03-02-19 Fig 7. Package outline SOT353-1 (TSSOP5) 74HC_HCT1G32_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 7 of 11 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate Plastic surface-mounted package; 5 leads SOT753 D E B y A X HE 5 v M A 4 Q A A1 c 1 2 3 Lp detail X bp e w M B 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.100 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT753 JEITA SC-74A EUROPEAN PROJECTION ISSUE DATE 02-04-16 06-03-16 Fig 8. Package outline SOT753 (SC-74A) 74HC_HCT1G32_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 8 of 11 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate 14. Abbreviations Table 9. Abbreviations Acronym Description DUT Device Under Test TTL Transistor-Transistor Logic 15. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes 74HC_HCT1G32_5 20080314 Product data sheet - 74HC_HCT1G32_4 Modifications: • Pin description of Pin 4 changed from input to output in Table 3. 74HC_HCT1G32_4 20070514 Product data sheet - 74HC_HCT1G32_3 74HC_HCT1G32_3 20020515 Product specification - 74HC_HCT1G32_2 74HC_HCT1G32_2 20010406 Product specification - 74HC_HCT1G32 74HC_HCT1G32 19971216 Preliminary specification - - 74HC_HCT1G32_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 9 of 11 74HC1G32; 74HCT1G32 NXP Semiconductors 2-input OR gate 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] 74HC_HCT1G32_5 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 05 — 14 March 2008 10 of 11 NXP Semiconductors 74HC1G32; 74HCT1G32 2-input OR gate 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Recommended operating conditions. . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 14 March 2008 Document identifier: 74HC_HCT1G32_5