UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 75Amps, 75Volts N-CHANNEL POWER MOSTFET 1 TO- 251 1 DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. 1 TO-252 TO-220 FEATURES * RDS(ON) = 12.5mΩ @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness 1 TO-220F *Pb-free plating product number: 75N75L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating 75N75-TA3-T 75N75L-TA3-T TO-220 75N75-TF3-T 75N75L-TF3-T TO-220F 75N75-TM3-T 75N75L-TM3-T TO-251 75N75-TN3-R 75N75L-TN3-R TO-252 75N75-TN3-T 75N75L-TN3-T TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source 75N75L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd. Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel Tube (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN 3: TO-252 (3) L: Lead Free Plating, Blank: Pb/Sn 1 of 8 QW-R502-097,A 75N75 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain to Source Voltage SYMBOL VDSS RATINGS UNIT 75 V TC = 25℃ 75 A ID Continuous Drain Current TC = 100℃ 56 A Drain Current Pulsed (Note 1) IDM 300 A ±20 Gate to Source Voltage VGS V Single Pulsed (Note 2) EAS 900 mJ Avalanche Energy 300 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25℃ 220 W Total Power Dissipation PD Derating above 25℃ 1.4 W/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Thermal Resistance Case-Sink SYMBOL θJA θJC θCS MIN TYP MAX 62.5 0.8 0.5 UNIT ℃/W ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Leakage Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL TEST CONDITIONS BVDSS VGS = 0 V, ID = 250 µA ID = 1mA, △BVDSS/△TJ Referenced to 25℃ VDS = 75 V, VGS = 0 V IDSS VDS = 75 V, VGS = 0 V, TJ = 150℃ VGS = 20V, VDS = 0 V IGSS VGS = -20V, VDS = 0 V TYP MAX 75 UNIT V 0.08 20 µA 250 µA 100 -100 nA nA 4.0 V 15 mΩ VDS = VGS, ID = 250 µA RDS(ON) VGS = 10 V, ID = 48 A 12.5 CISS COSS CRSS VGS = 0 V, VDS = 25 V f = 1MHz 3300 530 80 pF pF pF 12 79 80 52 90 20 30 ns ns ns ns nC nC nC tD(ON) tR tD(OFF) tF QG QGS QGD VDD = 38V, ID =48A, VGS=10V, (Note 4, 5) VDS = 60V, VGS = 10 V ID = 48A, (Note 4, 5) 2.0 V/℃ VGS(TH) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 140 35 45 2 of 8 QW-R502-097,A 75N75 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source-Drain Diode Ratings and Characteristics Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD IS = 48A, VGS = 0 V IS = 48A, VGS = 0 V Reverse Recovery Time trr dIF / dt = 100 A/µs Reverse Recovery Charge Qrr Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 75 300 1.4 90 300 UNIT A V ns µC 3 of 8 QW-R502-097,A 75N75 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-097,A 75N75 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VG 1mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IAS tp Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-097,A 75N75 Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics 100 10-1 14 VGS=10V 13 12 11 0 10 20 30 40 50 60 70 80 90 100 Drain Current, I D (A) 6000 5000 4000 Capacitance Characteristics (Non-Repetitive) CISS=CGS+C GD (CDS=shorted) COSS =CDS+C GD CRSS=CGD C ISS 3000 2000 1000 COSS 0 CRSS *Note: 1. VGS=0V 2. f = 1MHz 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw ℃ 1 50 2 4 5 6 7 8 9 10 3 Gate-Source Voltage, VGS (V) Reverse Drain Current vs. Allowable Case Temperature 102 150℃ 10 1 25℃ *Note: 1. VGS=0V 2. 250µs Test 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSD (V) 1.6 Gate Charge Characteristics 12 10 8 VDS=38V 6 VDS=60V 4 2 0 5 10 15 20 25 30 35 Drain-Source Voltage, VDC (V) 25 ℃ Drain Current, ID (A) Note: 1. VDS=25V 2. 20µs Pulse Test On-Resistance Variation vs. Drain Current and Gate Voltage 15 Capacitance (pF) 10 1 101 10 0 Drain-Source Voltage, VDS (V) Reverse Drain Current, ISD (A) Drain-Source On-Resistance, RDS(ON) (mΩ) 4.5V 101 102 Gate-to-Source Voltage, VGS (V) Drain Current, ID (A) On-State Characteristics V GS Top: 15V 10 V 8 V 7 V 102 6 V 5 .5V 5V Bottorm : 4.5V 0 *Note: ID=48A 5 10 15 20 25 30 35 40 45 Total Gate Charge, Q G (nC) 6 of 8 QW-R502-097,A 75N75 Power MOSFET Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 *Note: 1. VGS=0V 2. ID=250µA 0.9 0.8 -100 -50 0 50 100 150 200 Drain-Source On-Resistance, RDS(ON), (Normalized) Drain-Source Breakdown Voltage, BVDSS(Normalized) TYPICAL CHARACTERISTICS(Cont.) Junction Temperature, T J (℃) 3.0 2.5 2.0 1.5 1.0 0.0 -100 -50 0 50 100 150 200 Junction Temperature, T J (℃) Maximum Drain Current vs. Case Temperature 60 100µs 10 10ms 1ms DC 1 *Note: 1. T c=25℃ 2. T J=150℃ 3. Single Pulse 0.1 1 10 100 1000 Drain-Source Voltage, VD (V) Drain Current, ID (A) Drain Current , ID,(A) 70 Operation in This Area by RDS(ON) *Note: 1. VGS=10V 2. I D=3.5A 0.5 Maximum Safe Operating 100 On-Resistance Variation vs. Junction Temperature 50 40 30 20 10 0 25 50 75 100 125 150 Case Temperature, T C (℃) Thermal Response, ZθJC (t) Transient Thermal Response Curve 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse *Note: 1. ZθJ C (t) = 0.88℃/W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC =PDM×ZθJ C (t) 10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration, t 1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-097,A 75N75 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-097,A