UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) < 15mΩ@VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 70N06L-TA3-T 70N06G-TA3-T TO-220 70N06L-TF3-T 70N06G-TF3-T TO-220F 70N06L-TF2-T 70N06G-TF2-T TO-220F2 70N06L-T2Q-T 70N06G-T2Q-T TO-262 70N06L-TQ2-T 70N06G-TQ2-T TO-263 70N06L-TQ2-R 70N06G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 9 QW-R502-089.D 70N06 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-089.D 70N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V TC = 25°C 70 A Continuous Drain Current ID TC = 100°C 56 A Drain Current Pulsed (Note 2) IDM 280 A 600 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns TO-220/TO-262/TO-263 104 W Power Dissipation TO-220F PD 36 W TO-220F2 38 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.24mH, IAS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C 4. ISD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient TO-220/TO-262 TO-263 Junction to Case TO-220F TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62 UNIT °C/W 1.2 °C/W 3.47 3.28 °C/W °C/W 3 of 9 QW-R502-089.D 70N06 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V Forward VGS = 20V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0 V Breakdown Voltage Temperature △BVDSS/△TJ ID = 1mA, Referenced to 25°C 0.08 Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 35 A DYNAMIC CHARACTERISTICS 1800 Input Capacitance CISS VGS = 0 V, VDS = 25 V Output Capacitance COSS 800 f = 1MHz Reverse Transfer Capacitance CRSS 130 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 90 Turn-On Rise Time tR 350 VDD = 30V, VGS=10V,ID =1 A (Note 1, 2) Turn-Off Delay Time tD(OFF) 260 Turn-Off Fall Time tF 260 Total Gate Charge QG 210 VDS = 60V, VGS = 10 V, Gate-Source Charge QGS 50 ID = 48A (Note 1, 2) Gate-Drain Charge (Miller Charge) QGD 120 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 70A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR 90 VGS = 0 V, IS = 70A dIF / dt = 100 A/μs Reverse Recovery Charge QRR 300 Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MAX UNIT 1 100 -100 V μA nA nA V/°C 4.0 15 V mΩ 2000 900 150 pF pF pF 120 400 300 300 250 ns ns ns ns nC nC nC 1.4 V 70 A 280 ns μC 4 of 9 QW-R502-089.D 70N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-089.D 70N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤1μs tD(OFF) tF tR Duty Factor≤0.1% Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS 12V Same Type as D.U.T. 50kΩ 0.2μF QG 10V 0.3μF VDS QGS QGD VGS DUT 1mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS R VDD G 10V D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig. 4B Unclamped Inductive Switching Waveforms 6 of 9 QW-R502-089.D Gate-to-Source Voltage, VGS (V) Reverse Drain Current, ISD (A) Drain-Source On-Resistance, RDS(ON) (mΩ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 25 °С 1 50 °С Drain Current, ID (A) Drain Current, ID (A) Capacitance (pF) 70N06 Power MOSFET TYPICAL CHARACTERISTICS QW-R502-089.D 7 of 9 Drain Current, ID (A) Drain Current , ID,(A) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Thermal Response, ZθJC (t) 70N06 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R502-089.D 8 of 9 70N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 9 of 9 QW-R502-089.D