ETC 7P020FLV2202C15

PCMCIA Flash Memory Card
FLV Series
PCMCIA Flash Memory Card
1 MEGABYTE through 40 MEGABYTE (Intel/Sharp based)
General Description
Features
WEDC’s FLV Series Flash memory cards offer high density
linear Flash solid state storage solutions for code and data
storage, high performance disk emulation and execute in
place (XIP) applications in mobile PC and dedicated
(embedded) equipment.
FLV series cards conform to the PCMCIA international
standard
The card’s control logic provides the system interface and
controls the internal Flash memories. The card can be
read/written in byte-wide or word-wide mode which allows
for flexible integration into various systems. Combined with
file management software, such as Flash Translation Layer
(FTL), FLV Flash cards provide removable highperformance disk emulation.
The FLV series offers low power modes controlled by
registers. Cards contain separate 2kB EEPROM memory for
Card Information Structure (CIS) which can be used for easy
identification of card characteristics.
The WEDC FLV series is based on Intel/Sharp Flash
memories.
Note: Standard options include attribute memory.Cards
without attribute memory are available. Cards are also
• Low cost High Density Linear Flash Card
• Supports 3V or 5V only systems
• x8/ x16 Data Interface
•Based on Intel/Sharp FlashFile Components
•Fast Read Performance
- 150ns @ 5V
- 200ns @ 3.3V
• High Performance Random Writes
- 8µs Typical Word Write Time @ 5V
- 17µs Typical Word Write Time @ 3.3V
• Automated Write and Erase Algorithms
- Command User Interface
• 100,000 Erase Cycles per Block
• 64K word symmetrical Block Architecture
• PC Card Standard Type I Form Factor
available with or without a hardware write protect switch.
Architecture Overview
WEDC’s FLV series is designed to support from 2 to 20 of 4Mb, 8Mb or 16MB components, providing a wide
range of density options. Cards are based on the 28F004SC (4Mb), 28F008SC (8Mb) and 28F016SC (16Mb)
devices for 3.3V or 5V only applications. Devices codes for the 28F004SC, 28F008SC and the 28F016SC are: A7H,
A6H and AAH respectively. Systems should be able to recognize all three codes. Cards utilizing the 8Mb
components provide densities ranging from 2MB to 20MB in 2MB increments, cards utilizing 16Mb components
provide densities ranging from 4MB to 40MB in 4MB increments. 4 Mbit memory devices are used only for
smallest capacity cards (1MB).
In support of the PC Card 95 standard for word wide access, devices are paired. Therefore, the Flash array is
structured in 64K word (128kBytes) blocks. Write, read and block erase operations can be performed as either a
word or byte wide operation . By multiplexing A0, CE1# and CE2#, 8-bit hosts can access all data on data lines
DQ0 - DQ7.
The FLA21-FLA28 series also supports the following PCMCIA compatible register functions: Soft Reset via the
Configuration Option Register, Power Down (sleep mode) via the Configuration and Status Register and
monitoring of Ready/Busy, Soft Reset and Power Down via the Card Status Register (cards without attribute
memory do not have registers).
The FLV series cards conform to the PC Card (PCMCIA) and JEIDA standards, providing electrical and physical
compatibility. The PC Card form factor offers an industry standard pinout and mechanical outline, allowing density
upgrades without system design changes.
WEDC’s standard cards are shipped with WEDC’s Logo. Cards are also available with blank housings (no Logo).
The blank housings are available in both a recessed (for label) and flat housing. Please contact your WEDC sales
representative for further information on Custom artwork.
August 2000 Rev. 4 - ECO #13133
1
PC Card Products
PCMCIA Flash Memory Card
FLV Series
Block Diagram
Device type Manuf ID Device ID
Device Pair (N/2 - 1)
CSn
Device (N-1)
Device (N-2)
Array
Address
Bus
28F004SC
89H
A7H
28F008SC
89H
A6H
28F016SC
89H
AAH
ADDRESS
BUFFER
ADDRESS BUS
A1-A25
Control
Address
Bus
M Res
WL#
RL#
WH#
RH#
Device Pair 1
Device 3
Device Pair 0
Device 2
CS1
CE2#
CE1#
CSn
Cn
CS0
C0
Ctrl
REG#
A0
WP
At/Reg enable
/SR
/PD
Card
Management
Registers
4000h
Vcc
WH# RH#
DATA
BUS
Q8-Q15
DATA
BUS
Q0-Q7
SR Clr
Reg Clr
CS0
Device 0
Device 1
WE#
OE#
Control Logic
PCMCIA Interface
WL# RL#
0000h
attrib. mem
CIS
EEPROM 2kB
Vcc
control
Q0-Q7
Vcc
I/O buffer
DATA
BUS
D8-D15
DATA
BUS
D0-D7
Registers in Attribute Memory Space
CSR
Configuration Status Register: ADRS=4002h
ADDRESS
Register NAME
4100h
Status Reg.
4002h
4000h
Config. and Status Reg.
Write Only
PDwn not supported
not supported
D7 D6 D5 D4
D3 D2 D1 D0
D2
Power Down; active High
1=Place all memory devices in power down mode
0=normal operation
Power On default=0
Configuration Option Register
SR
Read Only
Status Register: ADRS=4100h
COR
Configuration Option Register: ADRS=4000h
SRES LREQ
-Configuration IndexD7 D6 D5 D4 D3 D2 D1 D0
D7
Soft Reset, active High
1 = Reset State
0 = End Reset State
D6
LevelReq (not supported)
D5-D0
Configuration index (not supported)
August 2000 Rev. 4 - ECO #13133
not supported SReset
Write Only
D7
D6
D5
PDwn not supported R/BSY
D4
D3
D2
D1
D0
D5
Represents the state of SRESET bit in COR (4000h)
1=Reset
0=Normal operation
Power On default D5=0
D3
Represents the state of Power Down bit (D2) in CSR (4002h)
1=Power Down
D0
Reflects the card's Ready/Busy signal (pin 16) driven
by memory components Ready/Busy outputs.This bit allows
software polling of the card's Ready/Busy status.
1=Ready
2
PC Card Products
PCMCIA Flash Memory Card
FLV Series
Pinout
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Signal name
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
A9
A8
A13
A14
WE#
RDY/BSY#
Vcc
Vpp1
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
WP
GND
I/O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
Data bit 1
Data bit 2
Write Potect
Ground
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
I
I
O
I
I
I
I
I
I
I
I
I
I
I
I/O
I/O
I/O
O
Active
Pin
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
LOW
LOW
LOW
LOW
N.C.
HIGH
Signal name
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
RFU
RFU
A17
A18
A19
A20
A21
Vcc
Vpp2
A22
A23
A24
A25
VS2
RST
Wait#
RFU
REG#
BVD2
BVD1
DQ8
DQ9
DQ10
CD2#
GND
I/O
O
I/O
I/O
I/O
I/O
I
I
O
I
I
I
I
I
I
I
I
I
O
I
O
I
O
O
I/O
I/O
O
O
Function
Ground
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Reserved
Reserved
Address bit 17
Address bit 18
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Card Reset
Extended Bus cycle
Reserved
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
Data bit 9
Data bit 10
Card Detect 2
Ground
Active
LOW
LOW
LOW
2MB(3)
4MB(3)
N.C.
8MB(3)
16MB(3)
32MB(3)
64MB(3)
N.C.
HIGH
Low(2,)
(2)
(2)
LOW
Notes:
1. RDY/BSY signal is an “Open drain” type output, pull-up resistor on host side is required.
2. Wait#, BVD1 and BVD2 are driven high for compatibility.
3. Shows density for which specified address bit is MSB. Higher order address bits are no
connects (ie 4MB A21 is MSB A22 - A25 are NC).
Mechanical
Interconnect area
1.0mm ± 0.05
(0.039”)
1.6mm ± 0.05
(0.063”)
3.0mm MIN
10.0mm MIN
(0.400”)
Substrate area
85.6mm ± 0.20
(3.370”)
1.0mm ± 0.05
(0.039”)
10.0mm MIN
(0.400”)
August 2000 Rev. 4 - ECO #13133
54.0mm ± 0.10
(2.126”)
3.3mm ± T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area
3
PC Card Products
PCMCIA Flash Memory Card
FLV Series
Card Signal Description
Symbol
Type
A0 - A25
INPUT
DQ0 - DQ15
INPUT/OUTPUT
CE1#, CE2#
INPUT
OE#
INPUT
WE#
RDY/BSY#
INPUT
OUTPUT
CD1#, CD2#
OUTPUT
WP
OUTPUT
VPP1, VPP2
N.C.
VCC
GND
REG#
INPUT
RST
INPUT
WAIT#
OUTPUT
BVD1, BVD2
OUTPUT
VS1, VS2
OUTPUT
Name and Function
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to
64MB of memory on the card. Signal A0 is not used in word access mode.
A25 is the most significant bit
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bidirectional databus. DQ15 is the MSB.
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-bit
hosts to access all data on DQ0 - DQ7.
OUTPUT ENABLE: Active low signal gating read data from the memory
card.
WRITE ENABLE: Active low signal gating write data to the memory card.
READY/BUSY OUTPUT: Indicates status of internally timed erase or
program algorithms. A high output indicates that the card is ready to
accept accesses. A low output indicates that one or more devices in the
memory card are busy with internally timed erase or write activities.
CARD DETECT 1 and 2: Provide card insertion detection. These signals
are internally connected to ground on the card. The host shall monitor
these signals to detect card insertion (pulled-up on host side).
WRITE PROTECT: Write protect reflects the status of the Write Protect
switch on the memory card. WP set to high = write protected, providing
internal hardware write lockout to the Flash array.
If card does not include optional write protect switch, this signal will be
pulled low internally indicating write protect = "off".
PROGRAM/ERASE POWER SUPPLY: Provides programming voltages
for card . Not connected for 3.3V/5V only card.
CARD POWER SUPPLY: (3.3V or 5.0V nominal).
CARD GROUND
ATTRIBUTE MEMORY SELECT : Active low signal, enables access to
Attribute Memory Plane, occupied by Card Information Structure and Card
Registers.
RESET: Active high signal for placing card in Power-on default state.
Reset can be used as a Power-Down signal for the memory array.
WAIT: This signal is pulled high internally for compatibility. No wait states
are generated.
BATTERY VOLTAGE DETECT: These signals are pulled high to
maintain SRAM card compatibility.
VOLTAGE SENSE: Notifies the host socket of the card's VCC
requirements. VS1 grounded and VS2 is open to indicate a 3.3V/5V card.
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD: pin may be driven or left
floating
RFU
N.C.
Functional Truth Table
READ function
Function Mode
Standby Mode
Byte Access (8 bits)
Word Access (16 bits)
Odd-Byte Only Access
/CE2 /CE1
H
H
H
L
H
L
L
L
L
H
A0
X
L
H
X
X
/OE
X
L
L
L
L
/WE
X
H
H
H
H
X
L
H
X
X
X
H
H
H
H
X
L
L
L
L
Common Memory
Attribute Memory
/REG D15-D8
D7-D0
X
High-Z
High-Z
H
High-Z Even-Byte
H
High-Z
Odd-Byte
H
Odd-Byte Even-Byte
H
Odd-Byte
High-Z
/REG D15-D8
D7-D0
X
High-Z
High-Z
L
High-Z Even-Byte
L
High-Z Not Valid
L Not Valid Even-Byte
L Not Valid
High-Z
WRITE function
Standby Mode
Byte Access (8 bits)
Word Access (16 bits)
Odd-Byte Only Access
H
H
H
L
L
August 2000 Rev. 4 - ECO #13133
H
L
L
L
H
X
H
H
H
H
4
X
X
X
Even-Byte
X
Odd-Byte
Odd-Byte Even-Byte
Odd-Byte
X
X
L
L
L
L
X
X
X
X
X
X
Even-Byte
X
Even-Byte
X
PC Card Products
PCMCIA Flash Memory Card
FLV Series
Absolute Maximum Ratings (1)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
Note:
(1) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
0°C to +60 °C
-40°C to +85 °C
-30°C to +80 °C
-40°C to +85 °C
-0.5V to VCC+0.5V
-0.5V to +7.0V
DC Characteristics (1)
Vcc = 3.3V / 5V
Symbol Parameter
ICCR
VCC Read Current
Density
(Mbytes)
All
ICCW
VCC Program Current
All
ICCE
VCC Erase Current
All
VCC Standby Current
28F016SC
40
2MB
20MB
ICCS
(CMOS)
Units Test Conditions
3.3V Vcc
5V Vcc
Typ(3) Max Typ(3) Max
10
12
20
35
mA VCC = VCCmax
tcycle = 150ns,CMOS levels
28F008SC
60
75
mA
Notes
4MB
40MB
50
2
28F008SC
2
28F016SC
200
400
50
400
60
50
mA
230
µA
420
200
60
420
230
VCC = VCCmax
Control Signals = VCC
Reset = VSS, CMOS levels
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Byte
wide operations. For 16 bit operation values are double.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
ILI
Input Leakage Current
1
±20
µA
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
ILO
Output Leakage Current
1
±20
µA
VIL
Input Low Voltage
1
0
0.8
V
VIH
Input High Voltage
1
0.7VCC
VCC+0.5
V
VOL
Output Low Voltage
1
0.4
V
IOL = 3.2mA
VOH
Output High Voltage
1
VCC-0.4
VCC
V
IOH = -2.0mA
VLKO
VCC Erase/Program
Lock Voltage
1
2.0
V
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to
internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=VCC due to internal
pull-down resistor.
August 2000 Rev. 4 - ECO #13133
5
PC Card Products
PCMCIA Flash Memory Card
FLV Series
AC Characteristics
Read Timing Parameters
250ns
150ns
SYMBOL
(PCMCIA)
tC(R)
Parameter
Min
Read Cycle Time
150
ta(A)
Address Access Time
150
250
ns
ta(CE)
Card Enable Access Time
150
250
ns
ta(OE)
Output Enable Access Time
75
125
ns
tsu(A)
Address Setup Time
20
30
ns
tsu(CE)
Card Enable Setup Time
0
0
ns
th(A)
Address Hold Time
20
30
ns
th(CE)
Card Enable Hold Time
20
30
ns
tv(A)
0
0
ns
tdis(CE)
Output Hold from Address
Change
Output Disable Time from CE#
75
100
ns
tdis(OE)
Output Disable Time from OE#
75
100
ns
ten(CE)
Output Enable Time from CE#
5
5
ns
ten(OE)
Output Enable Time from OE#
5
5
ns
trec(RSR)
Power Down recovery to Output
Delay. VCC = 5V
Max
Min
Max
Unit
250
500
ns
600
ns
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Read Timing Diagram
tc(R )
th (A )
ta (A )
A [2 5::0], /R E G
tv(A )
ta(C E )
tsu(C E )
/C E 1, /C E 2
NOTE 1
NOTE 1
tsu(A )
ta(O E )
th(C E )
tdis(C E )
/O E
tdis(O E )
ten(O E )
D [1 5::0]
D A TA V A LID
Note: Signal may be high or low in this area.
August 2000 Rev. 4 - ECO #13133
6
PC Card Products
PCMCIA Flash Memory Card
FLV Series
Write Timing Parameters
150ns @ 5V
250ns @ 3.3V
SYMBOL
(PCMCIA)
tCW
Write Cycle Time
150
250
ns
tw(WE)
Write Pulse Width
80
150
ns
tsu(A)
Address Setup Time
20
30
ns
tsu(A-WEH)
Address Setup Time for WE#
100
180
ns
tsu(CEWEH)
tsu(D-WEH)
Card Enable Setup Time for WE#
100
180
ns
Data Setup Time for WE#
50
80
ns
th(D)
Data Hold Time
20
30
ns
trec(WE)
Write Recover Time
20
30
ns
tdis(WE)
Output Disable Time from WE#
75
100
ns
tdis(OE)
Output Disable Time from OE#
75
100
ns
ten(WE)
Output Enable Time from WE#
5
5
ns
ten(OE)
Output Enable Time from OE#
5
5
ns
tsu(OE-WE)
Output Enable Setup from WE#
10
10
ns
th(OE-WE)
Output Enable Hold from WE#
10
10
ns
tsu(CE)
Card Enable Setup Time from OE#
0
0
ns
th(CE)
Card Enable Hold Time
20
20
ns
Parameter
Min
Max
Min
Max
Unit
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Write Timing Diagram
tc (W )
A [ 2 5 :: 0 ], / R E G
ts u ( A - W E H )
tre c (W E )
ts u ( C E - W E H )
th (C E )
ts u (C E )
/C E 1 , /C E 2
NOTE 1
NO TE 1
/O E
tw (W E )
ts u ( A )
th (O E -W E )
/W E
th ( D )
ts u (O E -W E )
D [ 1 5 : :0 ] ( D in )
ts u (D -W E H )
NO TE 2
D A T A IN P U T
t d is ( W E )
t d is ( O E )
te n (O E )
te n (W E )
D [ 1 5 ::0 ] ( D o u t )
NO TE 2
Notes:
1. Signal may be high or low in this area.
2. When the data I/O pins are in the output state, no signals shall be applied to the
data pins (D15 - D0) by the host system.
August 2000 Rev. 4 - ECO #13133
7
PC Card Products
PCMCIA Flash Memory Card
FLV Series
Data Write and Erase Performance (1,3)
VCC = 5V ± 5%, TA = 0C to + 70C
Symbol Parameter
tWHQV1
tEHQV1
tWHQV2
tEHQV2
Notes
Word/Byte Program time
4
Block Program Time
device SC
Block Erase Time
Min
Typ(1)
Max
Units
8
µs
0.4
0.5
sec
device SC
0.9
1.1
sec
Notes
Min
Typ(1)
VCC = 3.3V ± 0.3V, TA = 0C to + 70C
Symbol Parameter
tWHQV1
tEHQV1
tWHQV2
tEHQV2
Max
Units
Word/Byte Program time
4
17
µs
Block Program Time
device SC
1.1
sec
Block Erase Time
device SC
1.8
sec
Notes:
1. Typical: Nominal voltages and TA = 25C.
2. Excludes system overhead.
3. Valid for all speed options.
4. To maximize system performance RDY/BSY# signal should be polled.
August 2000 Rev. 4 - ECO #13133
8
PC Card Products
PCMCIA Flash Memory Card
FLV Series
PRODUCT MARKING
WED 7P016FLV2600C15 C995 9915
EDI
Date code
Lot code / trace number
Part number
Company Name
Note:
Some products are currently marked with our pre-merger company name/acronym (EDI). During our
transition period, some products will also be marked with our new company name/acronym (WED).
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.
PART NUMBERING
7 P 016 FLV26 00 C 15
Card access time
15
25
150ns
250ns
Temperature range
C Commercial 0°C to +70°C
I Industrial
-40°C to +85°C
Packaging option
00
Standard, type 1
Card family and version
- See Card Family and Version Info. for details (next page)
Card capacity
016
16MB
PC card
P
R
Standard PCMCIA
Ruggedized PCMCIA
Card technology
7
8
August 2000 Rev. 4 - ECO #13133
FLASH
SRAM
9
PC Card Products
PCMCIA Flash Memory Card
FLV Series
Card Family and Version Information
FLV 21-FLV24
FLV 21
FLV 22
FLV 23
FLV 24
Based on 28F008SC for 3.3V / 5V application
No Attribute Memory, No Write Protect switch
With Attribute Memory, No Write Protect switch
No Attribute Memory,with Write Protect switch
With Attribute Memory, with Write Protect switch
Example P/N 7P XXX FLV 22 SS T ZZ
FLV 25-FLV28
FLV 25
FLV 26
FLV 27
FLV 28
Based on 28F016SC for 3.3V / 5V application
No Attribute Memory, No Write Protect switch
With Attribute Memory, No Write Protect switch
No Attribute Memory,with Write Protect switch
With Attribute Memory, with Write Protect switch
Example P/N 7P XXX FLV 26 SS T ZZ
Ordering Information
7P XXX FLVYY SS T ZZ
where
XXX:
002 1)
004
006 1)
008
010 1)
012
014 1)
016
018 1)
020
024 2)
028 2)
032 2)
036 2)
040 2)
2MB
4MB
6MB
8MB
10MB
12MB
14MB
16MB
18MB
20MB
24MB
28MB
32MB
36MB
40MB
1)
2)
available only for FLV21 - FLV24
available only for FLV25 - FLV28
FLVYY:
Card Version (See Card Family and Version Information)
SS:
00
01
02
WEDC Silkscreen
Blank Housing, Type I
Blank Housing, Type I Recessed
T:
C
I**
Commercial
Industrial
ZZ:
15
150ns
Note: Options without attribute memory and with hardware write protect switch are available.
** Denotes advanced information.
August 2000 Rev. 4 - ECO #13133
10
PC Card Products
PCMCIA Flash Memory Card
FLV Series
CIS Information for FLV Series Cards
Example for FLV26 family, built with 28F016SC.
Address
00H
Value
Description
01H
02H
03H
CISTPL_DEVICE
TPL_LINK
Address
2AH
Value
Description
1DH
2CH
03H
CISTPL_DEVICE_OA
TPL_LINK
04H
53H
FLASH = 150ns (device writable)
2EH
02H
3 VOLT OPERATION
06H
0EH
CARD SIZE: 4MB
30H
11H
ROM - 250ns
1EH
8MB
32H
FFH
END OF DEVICE
2EH
12MB
34H
1AH
3EH
16MB
36H
06H
CISTPL_CONF
TPL_LINK
4EH
20MB
38H
01H
TPCC_SZ
5EH
24MB
3AH
00H
TPCC_LAST
6EH
28MB
3CH
00H
TPCC_RADR
7EH
32MB
3EH
40H
TPCC_RADR
8EH
36MB
40H
03H
TPCC_RMSK
9EH
40MB
42H
FFH
CISTPL_END
08H
FFH
END OF DEVICE
44H
1EH
CISTPL_DEVICEGEO
0AH
1CH
06H
TPL_LINK
04H
CISTPL_DEVICE_OC
TPL_LINK
46H
0CH
48H
02H
DGTPL_BUS
0EH
02H
3 VOLT OPERATION
4AH
11H
DGTPL_EBS
10H
51H
FLASH = 250ns (device writable)
4CH
01H
DGTPL_RBS
12H
0EH
CARD SIZE: 4MB
4EH
01H
DGTPL_WBS
1EH
4MB
50H
01H
DGTPL_PART
2EH
12MB
52H
01H
FLASH DEVICE
3EH
16MB
4EH
20MB
54H
20H
5EH
24MB
56H
04H
6EH
28MB
58H
F6H
EDI
TPLMID_MANF: LSB
7EH
32MB
5AH
01H
EDI
TPLMID_MANF: MSB
8EH
36MB
5CH
00H
LSB:
Number Not Assigned
9EH
40MB
5EH
00H
MSB:
Number Not Assigned
NON-INTERLEAVED
CISTPL_MANFID
TPL_LINK(04H)
14H
FFH
END OF DEVICE
60H
15H
CISTPL_VERS1
16H
18H
62H
47H
TPL_LINK
64H
05H
TPLLV1_MAJOR
66H
00H
TPLLV1_MINOR
18H
03H
CISTPL_JEDEC_C
TPL_LINK
1AH
89H
INTEL - ID
1CH
AAH
28F016SC – ID(4-40MB)
68H
45H
E
1EH
FFH
END OF DEVICE
6AH
44H
D
20H
17H
49H
I
03H
CISTPL_DEVICE_A
TPL_LINK
6CH
22H
6EH
37H
7
24H
42H
EEPROM - 200ns
70H
50H
P
26H
01H
Device Size = 2KBytes
72H
30H
0
FFH
END OF TUPLE
28H
INTEL
August 2000 Rev. 4 - ECO #13133
11
PC Card Products
PCMCIA Flash Memory Card
FLV Series
CIS Information for FLV Series Cards (Cont.)
Address
74H
76H
78H
7AH
7CH
Value
34H
30H
46H
4CH
56H
Address
C8H
Description
4
0
F
L
V
Value
20H
Description
SPACE
CAH
49H
I
CCH
4EH
N
CEH
43H
C
D0H
4FH
O
7EH
32H
2
D2H
52H
R
80H
36H
6
D4H
50H
P
82H
2DH
-
D6H
4FH
O
84H
2DH
-
D8H
52H
R
86H
2DH
-
DAH
41H
A
88H
31H
1
DCH
54H
T
8AH
35H
5
DEH
45H
E
8CH
20H
SPACE
E0H
44H
D
8EH
00H
END TEXT
E2H
20H
SPACE
90H
92H
43H
4FH
C
O
E4H
00H
END TEXT
94H
E6H
P
31H
1
50H
E8H
96H
9
59H
Y
39H
EAH
98H
52H
R
39H
9
9AH
49H
I
ECH
37H
7
9CH
47H
G
9EH
48H
H
A0H
54H
T
A2H
20H
SPACE
A4H
45H
E
A6H
4CH
L
A8H
45H
E
AAH
43H
C
ACH
54H
T
AEH
52H
R
B0H
4FH
O
B2H
4EH
N
B4H
49H
I
B6H
43H
C
B8H
20H
SPACE
BAH
44H
D
BCH
45H
E
BEH
53H
S
C0H
49H
I
C2H
47H
G
C4H
4EH
N
C6H
53H
S
August 2000 Rev. 4 - ECO #13133
12
EEH
00H
END TEXT
F0H
FFH
END OF LIST
PC Card Products
PCMCIA Flash Memory Card
FLV Series
Revision History
revision
00
01
02
03
04
rev date
Sep-98
02-Dec-98
7-Jun-99
30-May-00
1-Aug-00
descrpt
initial release
CIS, value in line 0CH
Logo change
Added Page 9, Revised Page
10, Changed Page Header
Corrected Timing Error pg. 6
White Electronic Designs Corporation
One Research Drive, Westborough, MA 01581, USA
tel:
(508) 366 5151
fax:
(508) 836 4850
www.whiteedc.com
August 2000 Rev. 4 - ECO #13133
13
PC Card Products