PCMCIA Flash Memory Card FLV Series PCMCIA Flash Memory Card 1 MEGABYTE through 40 MEGABYTE (Intel/Sharp based) General Description Features WEDC’s FLV Series Flash memory cards offer high density linear Flash solid state storage solutions for code and data storage, high performance disk emulation and execute in place (XIP) applications in mobile PC and dedicated (embedded) equipment. FLV series cards conform to the PCMCIA international standard The card’s control logic provides the system interface and controls the internal Flash memories. The card can be read/written in byte-wide or word-wide mode which allows for flexible integration into various systems. Combined with file management software, such as Flash Translation Layer (FTL), FLV Flash cards provide removable highperformance disk emulation. The FLV series offers low power modes controlled by registers. Cards contain separate 2kB EEPROM memory for Card Information Structure (CIS) which can be used for easy identification of card characteristics. The WEDC FLV series is based on Intel/Sharp Flash memories. Note: Standard options include attribute memory.Cards without attribute memory are available. Cards are also • Low cost High Density Linear Flash Card • Supports 3V or 5V only systems • x8/ x16 Data Interface •Based on Intel/Sharp FlashFile Components •Fast Read Performance - 150ns @ 5V - 200ns @ 3.3V • High Performance Random Writes - 8µs Typical Word Write Time @ 5V - 17µs Typical Word Write Time @ 3.3V • Automated Write and Erase Algorithms - Command User Interface • 100,000 Erase Cycles per Block • 64K word symmetrical Block Architecture • PC Card Standard Type I Form Factor available with or without a hardware write protect switch. Architecture Overview WEDC’s FLV series is designed to support from 2 to 20 of 4Mb, 8Mb or 16MB components, providing a wide range of density options. Cards are based on the 28F004SC (4Mb), 28F008SC (8Mb) and 28F016SC (16Mb) devices for 3.3V or 5V only applications. Devices codes for the 28F004SC, 28F008SC and the 28F016SC are: A7H, A6H and AAH respectively. Systems should be able to recognize all three codes. Cards utilizing the 8Mb components provide densities ranging from 2MB to 20MB in 2MB increments, cards utilizing 16Mb components provide densities ranging from 4MB to 40MB in 4MB increments. 4 Mbit memory devices are used only for smallest capacity cards (1MB). In support of the PC Card 95 standard for word wide access, devices are paired. Therefore, the Flash array is structured in 64K word (128kBytes) blocks. Write, read and block erase operations can be performed as either a word or byte wide operation . By multiplexing A0, CE1# and CE2#, 8-bit hosts can access all data on data lines DQ0 - DQ7. The FLA21-FLA28 series also supports the following PCMCIA compatible register functions: Soft Reset via the Configuration Option Register, Power Down (sleep mode) via the Configuration and Status Register and monitoring of Ready/Busy, Soft Reset and Power Down via the Card Status Register (cards without attribute memory do not have registers). The FLV series cards conform to the PC Card (PCMCIA) and JEIDA standards, providing electrical and physical compatibility. The PC Card form factor offers an industry standard pinout and mechanical outline, allowing density upgrades without system design changes. WEDC’s standard cards are shipped with WEDC’s Logo. Cards are also available with blank housings (no Logo). The blank housings are available in both a recessed (for label) and flat housing. Please contact your WEDC sales representative for further information on Custom artwork. August 2000 Rev. 4 - ECO #13133 1 PC Card Products PCMCIA Flash Memory Card FLV Series Block Diagram Device type Manuf ID Device ID Device Pair (N/2 - 1) CSn Device (N-1) Device (N-2) Array Address Bus 28F004SC 89H A7H 28F008SC 89H A6H 28F016SC 89H AAH ADDRESS BUFFER ADDRESS BUS A1-A25 Control Address Bus M Res WL# RL# WH# RH# Device Pair 1 Device 3 Device Pair 0 Device 2 CS1 CE2# CE1# CSn Cn CS0 C0 Ctrl REG# A0 WP At/Reg enable /SR /PD Card Management Registers 4000h Vcc WH# RH# DATA BUS Q8-Q15 DATA BUS Q0-Q7 SR Clr Reg Clr CS0 Device 0 Device 1 WE# OE# Control Logic PCMCIA Interface WL# RL# 0000h attrib. mem CIS EEPROM 2kB Vcc control Q0-Q7 Vcc I/O buffer DATA BUS D8-D15 DATA BUS D0-D7 Registers in Attribute Memory Space CSR Configuration Status Register: ADRS=4002h ADDRESS Register NAME 4100h Status Reg. 4002h 4000h Config. and Status Reg. Write Only PDwn not supported not supported D7 D6 D5 D4 D3 D2 D1 D0 D2 Power Down; active High 1=Place all memory devices in power down mode 0=normal operation Power On default=0 Configuration Option Register SR Read Only Status Register: ADRS=4100h COR Configuration Option Register: ADRS=4000h SRES LREQ -Configuration IndexD7 D6 D5 D4 D3 D2 D1 D0 D7 Soft Reset, active High 1 = Reset State 0 = End Reset State D6 LevelReq (not supported) D5-D0 Configuration index (not supported) August 2000 Rev. 4 - ECO #13133 not supported SReset Write Only D7 D6 D5 PDwn not supported R/BSY D4 D3 D2 D1 D0 D5 Represents the state of SRESET bit in COR (4000h) 1=Reset 0=Normal operation Power On default D5=0 D3 Represents the state of Power Down bit (D2) in CSR (4002h) 1=Power Down D0 Reflects the card's Ready/Busy signal (pin 16) driven by memory components Ready/Busy outputs.This bit allows software polling of the card's Ready/Busy status. 1=Ready 2 PC Card Products PCMCIA Flash Memory Card FLV Series Pinout Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Signal name GND DQ3 DQ4 DQ5 DQ6 DQ7 CE1# A10 OE# A11 A9 A8 A13 A14 WE# RDY/BSY# Vcc Vpp1 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 WP GND I/O Function Ground Data bit 3 Data bit 4 Data bit 5 Data bit 6 Data bit 7 Card enable 1 Address bit 10 Output enable Address bit 11 Address bit 9 Address bit 8 Address bit 13 Address bit 14 Write Enable Ready/Busy Supply Voltage Prog. Voltage Address bit 16 Address bit 15 Address bit 12 Address bit 7 Address bit 6 Address bit 5 Address bit 4 Address bit 3 Address bit 2 Address bit 1 Address bit 0 Data bit 0 Data bit 1 Data bit 2 Write Potect Ground I/O I/O I/O I/O I/O I I I I I I I I I O I I I I I I I I I I I I/O I/O I/O O Active Pin 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 LOW LOW LOW LOW N.C. HIGH Signal name GND CD1# DQ11 DQ12 DQ13 DQ14 DQ15 CE2# VS1 RFU RFU A17 A18 A19 A20 A21 Vcc Vpp2 A22 A23 A24 A25 VS2 RST Wait# RFU REG# BVD2 BVD1 DQ8 DQ9 DQ10 CD2# GND I/O O I/O I/O I/O I/O I I O I I I I I I I I I O I O I O O I/O I/O O O Function Ground Card Detect 1 Data bit 11 Data bit 12 Data bit 13 Data bit 14 Data bit 15 Card Enable 2 Voltage Sense 1 Reserved Reserved Address bit 17 Address bit 18 Address bit 19 Address bit 20 Address bit 21 Supply Voltage Prog. Voltage Address bit 22 Address bit 23 Address bit 24 Address bit 25 Voltage Sense 2 Card Reset Extended Bus cycle Reserved Attrib Mem Select Bat. Volt. Detect 2 Bat. Volt. Detect 1 Data bit 8 Data bit 9 Data bit 10 Card Detect 2 Ground Active LOW LOW LOW 2MB(3) 4MB(3) N.C. 8MB(3) 16MB(3) 32MB(3) 64MB(3) N.C. HIGH Low(2,) (2) (2) LOW Notes: 1. RDY/BSY signal is an “Open drain” type output, pull-up resistor on host side is required. 2. Wait#, BVD1 and BVD2 are driven high for compatibility. 3. Shows density for which specified address bit is MSB. Higher order address bits are no connects (ie 4MB A21 is MSB A22 - A25 are NC). Mechanical Interconnect area 1.0mm ± 0.05 (0.039”) 1.6mm ± 0.05 (0.063”) 3.0mm MIN 10.0mm MIN (0.400”) Substrate area 85.6mm ± 0.20 (3.370”) 1.0mm ± 0.05 (0.039”) 10.0mm MIN (0.400”) August 2000 Rev. 4 - ECO #13133 54.0mm ± 0.10 (2.126”) 3.3mm ± T1 (0.130”) T1=0.10mm interconnect area T1=0.20mm substrate area 3 PC Card Products PCMCIA Flash Memory Card FLV Series Card Signal Description Symbol Type A0 - A25 INPUT DQ0 - DQ15 INPUT/OUTPUT CE1#, CE2# INPUT OE# INPUT WE# RDY/BSY# INPUT OUTPUT CD1#, CD2# OUTPUT WP OUTPUT VPP1, VPP2 N.C. VCC GND REG# INPUT RST INPUT WAIT# OUTPUT BVD1, BVD2 OUTPUT VS1, VS2 OUTPUT Name and Function ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not used in word access mode. A25 is the most significant bit DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bidirectional databus. DQ15 is the MSB. CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7. OUTPUT ENABLE: Active low signal gating read data from the memory card. WRITE ENABLE: Active low signal gating write data to the memory card. READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. A high output indicates that the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy with internally timed erase or write activities. CARD DETECT 1 and 2: Provide card insertion detection. These signals are internally connected to ground on the card. The host shall monitor these signals to detect card insertion (pulled-up on host side). WRITE PROTECT: Write protect reflects the status of the Write Protect switch on the memory card. WP set to high = write protected, providing internal hardware write lockout to the Flash array. If card does not include optional write protect switch, this signal will be pulled low internally indicating write protect = "off". PROGRAM/ERASE POWER SUPPLY: Provides programming voltages for card . Not connected for 3.3V/5V only card. CARD POWER SUPPLY: (3.3V or 5.0V nominal). CARD GROUND ATTRIBUTE MEMORY SELECT : Active low signal, enables access to Attribute Memory Plane, occupied by Card Information Structure and Card Registers. RESET: Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down signal for the memory array. WAIT: This signal is pulled high internally for compatibility. No wait states are generated. BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility. VOLTAGE SENSE: Notifies the host socket of the card's VCC requirements. VS1 grounded and VS2 is open to indicate a 3.3V/5V card. RESERVED FOR FUTURE USE NO INTERNAL CONNECTION TO CARD: pin may be driven or left floating RFU N.C. Functional Truth Table READ function Function Mode Standby Mode Byte Access (8 bits) Word Access (16 bits) Odd-Byte Only Access /CE2 /CE1 H H H L H L L L L H A0 X L H X X /OE X L L L L /WE X H H H H X L H X X X H H H H X L L L L Common Memory Attribute Memory /REG D15-D8 D7-D0 X High-Z High-Z H High-Z Even-Byte H High-Z Odd-Byte H Odd-Byte Even-Byte H Odd-Byte High-Z /REG D15-D8 D7-D0 X High-Z High-Z L High-Z Even-Byte L High-Z Not Valid L Not Valid Even-Byte L Not Valid High-Z WRITE function Standby Mode Byte Access (8 bits) Word Access (16 bits) Odd-Byte Only Access H H H L L August 2000 Rev. 4 - ECO #13133 H L L L H X H H H H 4 X X X Even-Byte X Odd-Byte Odd-Byte Even-Byte Odd-Byte X X L L L L X X X X X X Even-Byte X Even-Byte X PC Card Products PCMCIA Flash Memory Card FLV Series Absolute Maximum Ratings (1) Operating Temperature TA (ambient) Commercial Industrial Storage Temperature Commercial Industrial Voltage on any pin relative to VSS VCC supply Voltage relative to VSS Note: (1) Stress greater than those listed under “Absolute Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 0°C to +60 °C -40°C to +85 °C -30°C to +80 °C -40°C to +85 °C -0.5V to VCC+0.5V -0.5V to +7.0V DC Characteristics (1) Vcc = 3.3V / 5V Symbol Parameter ICCR VCC Read Current Density (Mbytes) All ICCW VCC Program Current All ICCE VCC Erase Current All VCC Standby Current 28F016SC 40 2MB 20MB ICCS (CMOS) Units Test Conditions 3.3V Vcc 5V Vcc Typ(3) Max Typ(3) Max 10 12 20 35 mA VCC = VCCmax tcycle = 150ns,CMOS levels 28F008SC 60 75 mA Notes 4MB 40MB 50 2 28F008SC 2 28F016SC 200 400 50 400 60 50 mA 230 µA 420 200 60 420 230 VCC = VCCmax Control Signals = VCC Reset = VSS, CMOS levels CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V Notes: 1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Byte wide operations. For 16 bit operation values are double. 2. Control Signals: CE1#, CE2#, OE#, WE#, REG#. 3. Typical: VCC = 5V, T = +25C. Symbol Parameter Notes Min Max Units Test Conditions ILI Input Leakage Current 1 ±20 µA VCC = VCCMAX Vin =VCC or VSS VCC = VCCMAX Vout =VCC or VSS ILO Output Leakage Current 1 ±20 µA VIL Input Low Voltage 1 0 0.8 V VIH Input High Voltage 1 0.7VCC VCC+0.5 V VOL Output Low Voltage 1 0.4 V IOL = 3.2mA VOH Output High Voltage 1 VCC-0.4 VCC V IOH = -2.0mA VLKO VCC Erase/Program Lock Voltage 1 2.0 V Notes: 1. Values are the same for byte and word wide modes for all card densities. 2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to internal pull-up resistors. Leakage currents on RST will be <150µA when VIN=VCC due to internal pull-down resistor. August 2000 Rev. 4 - ECO #13133 5 PC Card Products PCMCIA Flash Memory Card FLV Series AC Characteristics Read Timing Parameters 250ns 150ns SYMBOL (PCMCIA) tC(R) Parameter Min Read Cycle Time 150 ta(A) Address Access Time 150 250 ns ta(CE) Card Enable Access Time 150 250 ns ta(OE) Output Enable Access Time 75 125 ns tsu(A) Address Setup Time 20 30 ns tsu(CE) Card Enable Setup Time 0 0 ns th(A) Address Hold Time 20 30 ns th(CE) Card Enable Hold Time 20 30 ns tv(A) 0 0 ns tdis(CE) Output Hold from Address Change Output Disable Time from CE# 75 100 ns tdis(OE) Output Disable Time from OE# 75 100 ns ten(CE) Output Enable Time from CE# 5 5 ns ten(OE) Output Enable Time from OE# 5 5 ns trec(RSR) Power Down recovery to Output Delay. VCC = 5V Max Min Max Unit 250 500 ns 600 ns Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications. Read Timing Diagram tc(R ) th (A ) ta (A ) A [2 5::0], /R E G tv(A ) ta(C E ) tsu(C E ) /C E 1, /C E 2 NOTE 1 NOTE 1 tsu(A ) ta(O E ) th(C E ) tdis(C E ) /O E tdis(O E ) ten(O E ) D [1 5::0] D A TA V A LID Note: Signal may be high or low in this area. August 2000 Rev. 4 - ECO #13133 6 PC Card Products PCMCIA Flash Memory Card FLV Series Write Timing Parameters 150ns @ 5V 250ns @ 3.3V SYMBOL (PCMCIA) tCW Write Cycle Time 150 250 ns tw(WE) Write Pulse Width 80 150 ns tsu(A) Address Setup Time 20 30 ns tsu(A-WEH) Address Setup Time for WE# 100 180 ns tsu(CEWEH) tsu(D-WEH) Card Enable Setup Time for WE# 100 180 ns Data Setup Time for WE# 50 80 ns th(D) Data Hold Time 20 30 ns trec(WE) Write Recover Time 20 30 ns tdis(WE) Output Disable Time from WE# 75 100 ns tdis(OE) Output Disable Time from OE# 75 100 ns ten(WE) Output Enable Time from WE# 5 5 ns ten(OE) Output Enable Time from OE# 5 5 ns tsu(OE-WE) Output Enable Setup from WE# 10 10 ns th(OE-WE) Output Enable Hold from WE# 10 10 ns tsu(CE) Card Enable Setup Time from OE# 0 0 ns th(CE) Card Enable Hold Time 20 20 ns Parameter Min Max Min Max Unit Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications. Write Timing Diagram tc (W ) A [ 2 5 :: 0 ], / R E G ts u ( A - W E H ) tre c (W E ) ts u ( C E - W E H ) th (C E ) ts u (C E ) /C E 1 , /C E 2 NOTE 1 NO TE 1 /O E tw (W E ) ts u ( A ) th (O E -W E ) /W E th ( D ) ts u (O E -W E ) D [ 1 5 : :0 ] ( D in ) ts u (D -W E H ) NO TE 2 D A T A IN P U T t d is ( W E ) t d is ( O E ) te n (O E ) te n (W E ) D [ 1 5 ::0 ] ( D o u t ) NO TE 2 Notes: 1. Signal may be high or low in this area. 2. When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by the host system. August 2000 Rev. 4 - ECO #13133 7 PC Card Products PCMCIA Flash Memory Card FLV Series Data Write and Erase Performance (1,3) VCC = 5V ± 5%, TA = 0C to + 70C Symbol Parameter tWHQV1 tEHQV1 tWHQV2 tEHQV2 Notes Word/Byte Program time 4 Block Program Time device SC Block Erase Time Min Typ(1) Max Units 8 µs 0.4 0.5 sec device SC 0.9 1.1 sec Notes Min Typ(1) VCC = 3.3V ± 0.3V, TA = 0C to + 70C Symbol Parameter tWHQV1 tEHQV1 tWHQV2 tEHQV2 Max Units Word/Byte Program time 4 17 µs Block Program Time device SC 1.1 sec Block Erase Time device SC 1.8 sec Notes: 1. Typical: Nominal voltages and TA = 25C. 2. Excludes system overhead. 3. Valid for all speed options. 4. To maximize system performance RDY/BSY# signal should be polled. August 2000 Rev. 4 - ECO #13133 8 PC Card Products PCMCIA Flash Memory Card FLV Series PRODUCT MARKING WED 7P016FLV2600C15 C995 9915 EDI Date code Lot code / trace number Part number Company Name Note: Some products are currently marked with our pre-merger company name/acronym (EDI). During our transition period, some products will also be marked with our new company name/acronym (WED). Starting October 2000 all PCMCIA products will be marked only with the WED prefix. PART NUMBERING 7 P 016 FLV26 00 C 15 Card access time 15 25 150ns 250ns Temperature range C Commercial 0°C to +70°C I Industrial -40°C to +85°C Packaging option 00 Standard, type 1 Card family and version - See Card Family and Version Info. for details (next page) Card capacity 016 16MB PC card P R Standard PCMCIA Ruggedized PCMCIA Card technology 7 8 August 2000 Rev. 4 - ECO #13133 FLASH SRAM 9 PC Card Products PCMCIA Flash Memory Card FLV Series Card Family and Version Information FLV 21-FLV24 FLV 21 FLV 22 FLV 23 FLV 24 Based on 28F008SC for 3.3V / 5V application No Attribute Memory, No Write Protect switch With Attribute Memory, No Write Protect switch No Attribute Memory,with Write Protect switch With Attribute Memory, with Write Protect switch Example P/N 7P XXX FLV 22 SS T ZZ FLV 25-FLV28 FLV 25 FLV 26 FLV 27 FLV 28 Based on 28F016SC for 3.3V / 5V application No Attribute Memory, No Write Protect switch With Attribute Memory, No Write Protect switch No Attribute Memory,with Write Protect switch With Attribute Memory, with Write Protect switch Example P/N 7P XXX FLV 26 SS T ZZ Ordering Information 7P XXX FLVYY SS T ZZ where XXX: 002 1) 004 006 1) 008 010 1) 012 014 1) 016 018 1) 020 024 2) 028 2) 032 2) 036 2) 040 2) 2MB 4MB 6MB 8MB 10MB 12MB 14MB 16MB 18MB 20MB 24MB 28MB 32MB 36MB 40MB 1) 2) available only for FLV21 - FLV24 available only for FLV25 - FLV28 FLVYY: Card Version (See Card Family and Version Information) SS: 00 01 02 WEDC Silkscreen Blank Housing, Type I Blank Housing, Type I Recessed T: C I** Commercial Industrial ZZ: 15 150ns Note: Options without attribute memory and with hardware write protect switch are available. ** Denotes advanced information. August 2000 Rev. 4 - ECO #13133 10 PC Card Products PCMCIA Flash Memory Card FLV Series CIS Information for FLV Series Cards Example for FLV26 family, built with 28F016SC. Address 00H Value Description 01H 02H 03H CISTPL_DEVICE TPL_LINK Address 2AH Value Description 1DH 2CH 03H CISTPL_DEVICE_OA TPL_LINK 04H 53H FLASH = 150ns (device writable) 2EH 02H 3 VOLT OPERATION 06H 0EH CARD SIZE: 4MB 30H 11H ROM - 250ns 1EH 8MB 32H FFH END OF DEVICE 2EH 12MB 34H 1AH 3EH 16MB 36H 06H CISTPL_CONF TPL_LINK 4EH 20MB 38H 01H TPCC_SZ 5EH 24MB 3AH 00H TPCC_LAST 6EH 28MB 3CH 00H TPCC_RADR 7EH 32MB 3EH 40H TPCC_RADR 8EH 36MB 40H 03H TPCC_RMSK 9EH 40MB 42H FFH CISTPL_END 08H FFH END OF DEVICE 44H 1EH CISTPL_DEVICEGEO 0AH 1CH 06H TPL_LINK 04H CISTPL_DEVICE_OC TPL_LINK 46H 0CH 48H 02H DGTPL_BUS 0EH 02H 3 VOLT OPERATION 4AH 11H DGTPL_EBS 10H 51H FLASH = 250ns (device writable) 4CH 01H DGTPL_RBS 12H 0EH CARD SIZE: 4MB 4EH 01H DGTPL_WBS 1EH 4MB 50H 01H DGTPL_PART 2EH 12MB 52H 01H FLASH DEVICE 3EH 16MB 4EH 20MB 54H 20H 5EH 24MB 56H 04H 6EH 28MB 58H F6H EDI TPLMID_MANF: LSB 7EH 32MB 5AH 01H EDI TPLMID_MANF: MSB 8EH 36MB 5CH 00H LSB: Number Not Assigned 9EH 40MB 5EH 00H MSB: Number Not Assigned NON-INTERLEAVED CISTPL_MANFID TPL_LINK(04H) 14H FFH END OF DEVICE 60H 15H CISTPL_VERS1 16H 18H 62H 47H TPL_LINK 64H 05H TPLLV1_MAJOR 66H 00H TPLLV1_MINOR 18H 03H CISTPL_JEDEC_C TPL_LINK 1AH 89H INTEL - ID 1CH AAH 28F016SC – ID(4-40MB) 68H 45H E 1EH FFH END OF DEVICE 6AH 44H D 20H 17H 49H I 03H CISTPL_DEVICE_A TPL_LINK 6CH 22H 6EH 37H 7 24H 42H EEPROM - 200ns 70H 50H P 26H 01H Device Size = 2KBytes 72H 30H 0 FFH END OF TUPLE 28H INTEL August 2000 Rev. 4 - ECO #13133 11 PC Card Products PCMCIA Flash Memory Card FLV Series CIS Information for FLV Series Cards (Cont.) Address 74H 76H 78H 7AH 7CH Value 34H 30H 46H 4CH 56H Address C8H Description 4 0 F L V Value 20H Description SPACE CAH 49H I CCH 4EH N CEH 43H C D0H 4FH O 7EH 32H 2 D2H 52H R 80H 36H 6 D4H 50H P 82H 2DH - D6H 4FH O 84H 2DH - D8H 52H R 86H 2DH - DAH 41H A 88H 31H 1 DCH 54H T 8AH 35H 5 DEH 45H E 8CH 20H SPACE E0H 44H D 8EH 00H END TEXT E2H 20H SPACE 90H 92H 43H 4FH C O E4H 00H END TEXT 94H E6H P 31H 1 50H E8H 96H 9 59H Y 39H EAH 98H 52H R 39H 9 9AH 49H I ECH 37H 7 9CH 47H G 9EH 48H H A0H 54H T A2H 20H SPACE A4H 45H E A6H 4CH L A8H 45H E AAH 43H C ACH 54H T AEH 52H R B0H 4FH O B2H 4EH N B4H 49H I B6H 43H C B8H 20H SPACE BAH 44H D BCH 45H E BEH 53H S C0H 49H I C2H 47H G C4H 4EH N C6H 53H S August 2000 Rev. 4 - ECO #13133 12 EEH 00H END TEXT F0H FFH END OF LIST PC Card Products PCMCIA Flash Memory Card FLV Series Revision History revision 00 01 02 03 04 rev date Sep-98 02-Dec-98 7-Jun-99 30-May-00 1-Aug-00 descrpt initial release CIS, value in line 0CH Logo change Added Page 9, Revised Page 10, Changed Page Header Corrected Timing Error pg. 6 White Electronic Designs Corporation One Research Drive, Westborough, MA 01581, USA tel: (508) 366 5151 fax: (508) 836 4850 www.whiteedc.com August 2000 Rev. 4 - ECO #13133 13 PC Card Products