UNISONIC TECHNOLOGIES CO., LTD 9N80 Preliminary Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 9N80 is universally applied in high efficiency switch mode power supply. TO-220 1 1 FEATURES TO-220F1 TO-220F2 * RDS(on) = 1.3Ω @VGS = 10 V * Improved Gate Charge * Lower Input Capacitance * Lower Leakage Current: 25μA (Max.) @ VDS = 800V SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N80L-TA3-T 9N80G-TA3-T 9N80L-TF1-T 9N80G-TF1-T 9N80L-TF2-T 9N80G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 5 QW-R502-493.e 9N80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) RATINGS UNIT 800 V ±30 V 9 A 9 A Continuous Drain Current (Continuous) Pulsed (Note 2) 36 A 900 mJ Single Pulsed (Note 3) Avalanche Energy Repetitive (Note 2) 24 mJ Peak Diode Recovery dv/dt (Note 4) 2.0 V/ns TO-220 147 Power Dissipation TO-220F1 PD 49 W TO-220F2 51 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 21mH, IAS = 9A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C 4. ISD ≤ 9A, di/dt ≤ 180A/µs, VDD ≤ BVDSS, Starting TJ = 25°C SYMBOL VDSS VGSS IAR ID IDM EAS EAR dv/dt THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220 TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 62.5 0.85 2.55 2.45 UNIT °C/W °C/W 2 of 5 QW-R502-493.e 9N80 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 800 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA 0.96 V/°C Drain-Source Leakage Current IDSS VDS=800V 25 µA +100 nA Forward VGS=+30V Gate- Source Leakage Current IGSS Reverse VGS=-30V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=5V, ID=250µA 3 5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.5A 1.05 1.3 Ω Forward Transconductance gFS VDS=50V, ID=4.5A (Note 1) 5.54 S DYNAMIC PARAMETERS Input Capacitance CISS 2020 2600 pF VGS=0V, VDS=25V, f=1.0MHz, Output Capacitance COSS 195 230 pF Reverse Transfer Capacitance CRSS 82 95 pF SWITCHING PARAMETERS 93 120 nC Total Gate Charge QG VGS=10V, VDS=640V, ID=9A, Gate to Source Charge QGS 14.3 nC (Note 1, 2) Gate to Drain Charge QGD 42.1 nC Turn-ON Delay Time tD(ON) 25 60 ns Rise Time tR 37 85 ns VDD=400V, ID=9 A, RG=16Ω, (Note 1, 2) Turn-OFF Delay Time tD(OFF) 113 235 ns Fall-Time tF 42 95 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 9 A Integral reverse pn-diode in the Maximum Pulsed Drain-Source Diode mosfet ISM 36 A Forward Current (Note 1) Drain-Source Diode Forward Voltage (Note 1) VSD IS=9A, VGS=0V, TJ=25°C 1.4 V 560 ns Reverse Recovery Time trr TJ=25°C, IF=9A, dIF/dt=100A/µs, (Note 1) Reverse Recovery Charge QRR 8.4 µC Note: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-493.e 9N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-493.e 9N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-493.e