UNISONIC TECHNOLOGIES CO., LTD 7N75 Preliminary Power MOSFET 7.0A, 750V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N75 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 7N75 is universally applied in high efficiency switch mode power supply. 1 TO-220 FEATURES * RDS(on)=1.7Ω @ VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N75L-TA3-T 7N75G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-563.b 7N75 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 750 V Gate-Source Voltage VGSS ±30 V 7 A Continuous ID Drain Current Pulsed (Note 2) IDM 28 A Avalanche Energy Single Pulsed (Note 3) EAS 530 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 142 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=19.5mH, IAS=7A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤7A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 0.88 UNIT °C/W °C/W 2 of 6 QW-R502-563.b 7N75 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250µA ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C VDS=750V, VGS=0V IDSS VDS=600V, TC=125°C VDS=0V ,VGS=30V IGSS VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS=25V,VGS=0V,f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=600V, VGS=10V, ID=7A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=375V, ID=7A, RG=25Ω (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =7A, VGS=0V Body Diode Reverse Recovery Time tRR VGS=0V, IS=7A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 750 V 0.67 V/°C 1 µA 1 µA 100 nA -100 nA 2.0 1.35 4.0 1.7 1200 1600 150 190 18 25 30 6.5 13 35 79 80 52 80 165 160 120 7.0 28 1.4 320 2.4 V Ω pF pF pF nC nC nC ns ns ns ns A A V ns μC 3 of 6 QW-R502-563.b 7N75 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-563.b 7N75 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-563.b 7N75 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-563.b