AGB3307 50Ω High Linearity Low Noise Wideband Gain Block PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • DC-5500 MHz Operation Bandwidth • +42 dBm Output IP3 at 850 MHz • 5 dB Noise Figure at 850 MHz • 12 dB Gain at 850 MHz • +17.5 dBm P1dB at 1950 MHz • SOT-89 Package • Single +8 V to +12 V Supply • Case Temperature: -40 to +85 °C APPLICATIONS • Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD systems • Fixed Wireless • MMDS/WLL • WLAN, HyperLAN S24 Package SOT-89 PRODUCT DESCRIPTION The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise and low distortion. No external matching components are needed for insertion into a 50Ω system. With a high output IP3, low noise figure and wide band operation, the AGB3307 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3307 requires a single supply voltage, and typically consumes 0.6 Watts of power using a +8 V supply. RF Input RF Output / Bias Figure 1: Block Diagram 07/2003 AGB3307 GND 4 1 2 3 RF IN GND RF OUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME 1 RFIN RF Input 2 GND Ground 3 RFOUT RF Output / Bias 4 GND Ground DESCRIPTION PRELIMINARY DATA SHEET - Rev 1.2 07/2003 AGB3307 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Device Voltage (VCC) 0 +6 VD C RF Input Power (PIN) - +10 dB m -40 +150 °C - +200 °C Storage Temperature (TSTG) Junction Temperature Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) (1) - - 5500 MHz Supply Voltage (VSUPPLY) (2) - +8 - VD C -40 - +85 °C Case Temperature (TC) The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) Operating frequency is defined by the output return loss (S22) having a VSWR less than 2:1. (2) Voltage applied through a bias resistor and inductor. Refer to Figure 3. For other supply voltages, see the APPLICATION INFORMATION section. PRELIMINARY DATA SHEET - Rev 1.2 07/2003 3 AGB3307 Table 4: Electrical Specifications Ω System) (TA = +25 °C, VSUPPLY = +8 VDC, 50Ω PARAMETER MIN TYP MAX UNIT Gain (S21) 850 1950 2140 2450 MHz MHz MHz MHz - 11.9 11.7 11.5 11.5 - dB 850 1950 2140 2450 MHz MHz MHz MHz - +41.9 +36.0 +35.6 +33.8 - dB m Output 1dB Compression (P1dB) 1950 MHz - +17.4 - dB m - 5 - dB Thermal Resistance ( θJC) (2) - 140 - °C/W Supply Current (ICC) - 80 - mA Output IP3 (1) Noise Figure 850 MHz Notes: (1) OIP3 is measured with two tones at 1 MHz spacing at 0 dBm output power per tone. (2) The value for Thermal Resistance is based on a Device Voltage (VCC) of +5.0 Volts. 3. Performance as measured on ANADIGICS test fixture (see Figure 3). VSUPPLY 38 W Rs Bypass RF Choke DC Block RF Input 100 nH 0.01 mF DC Block RF Output AGB3307 0.01 mF VCC 0.01 mF Ω Terminations) Figure 3: Application Circuit (50Ω 4 PRELIMINARY DATA SHEET - Rev 1.2 07/2003 100 pF 10 pF AGB3307 PERFORMANCE DATA Figure 5: Isolation vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA) 25 0 20 -10 Mag S12: Isolation (dB) Mag S21: Gain (dB) Figure 4: Gain vs. Frequency De-embedded 50W S-parameter (TA = +25 °C, VCC = +5.0 V, ICC = 80 mA) 15 10 5 -20 -30 -40 0 -50 0 1 2 3 4 5 6 7 0 1 2 Frequency (GHz) 5 6 7 0 Mag S22: Output Return Loss (dB) Mag S11: Input Return Loss (dB) 4 Figure 7: Output Return Loss vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA) Figure 6: Input Return Loss vs. Frequency De-embedded 50W S-parameter o (TA = +25 C, VCC = +5.0 V, ICC = 80 mA) 0 3 Frequency (GHz) -10 -20 -30 -40 -50 -10 -20 -30 -40 -50 0 1 2 3 4 5 6 7 0 1 Frequency (GHz) 2 3 4 5 6 7 Frequency (GHz) PRELIMINARY DATA SHEET - Rev 1.2 07/2003 5 AGB3307 APPLICATION INFORMATION The AGB3307 is optimized for a bias current of 80 mA. Using a +8 V supply, a bias resistor (RS) of 38 Ω will provide the appropriate bias (see Figure 3). Table 5 shows the recommended value of RS for other supply voltages. 6 Table 5: Bias Resistor Values for Various Supply Voltages VSUPPLY +8 V +9 V +10 V +12 V RS 38 Ω 51 Ω 63 Ω 88 Ω PRELIMINARY DATA SHEET - Rev 1.2 07/2003 AGB3307 PACKAGE OUTLINE Figure 8: S24 Package Outline – SOT-89 3307 LLLLNN LLLL= FOUR NUMERIC CHARACTERS Figure 9: Branding Specification PRELIMINARY DATA SHEET - Rev 1.2 07/2003 7 AGB3307 ORDERING INFORMATION PART NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AGB3307S24Q1 -40 to +85°C SOT-89 Package 1,000 piece Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 8 PRELIMINARY DATA SHEET - Rev 1.2 07/2003