Am29LV065D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 23544 Revision C Amendment 2 Issue Date February 16, 2006 THIS PAGE LEFT INTENTIONALLY BLANK. Am29LV065D 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileIOTM control — Device generates output voltages and tolerates input voltages on the DQ I/Os as determined by the voltage on VIO input ■ High performance — Access times as fast as 90 ns ■ Manufactured on 0.23 µm process technology ■ CFI (Common Flash Interface) compliant — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices ■ SecSi (Secured Silicon) Sector region — 256-byte sector for permanent, secure identification through an 16-byte random Electronic Serial Number — May be programmed and locked at the factory or by the customer — Accessible through a command sequence ■ Ultra low power consumption (typical values at 3.0 V, 5 MHz) — 9 mA typical active read current — 26 mA typical erase/program current — 200 nA typical standby mode current ■ Flexible sector architecture — One hundred twenty-eight 64 Kbyte sectors ■ Sector Protection — A hardware method to lock a sector to prevent program or erase operations within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Compatibility with JEDEC standards — Pinout and software compatible with single-power supply Flash — Superior inadvertent write protection ■ Minimum 1 million erase cycle guarantee per sector ■ Package options — 48-pin TSOP — 63-ball FBGA ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Hardware reset pin (RESET#) — Hardware method to reset the device for reading array data ■ ACC pin — Accelerates programming time for higher throughput during system production ■ Program and Erase Performance (VHH not applied to the ACC input pin) — Byte program time: 5 µs typical — Sector erase time: 0.9 s typical for each 64 Kbyte sector ■ 20-year data retention at 125°C — Reliable operation for the life of the system Publication# 23544 Rev: C Amendment: 2 Issue Date: February 16, 2006 Refer to AMD’s Website (www.amd.com) for the latest information. GENERAL DESCRIPTION The Am29LV065D is a 64 Mbit, 3.0 Volt (3.0 V to 3.6 V) single power supply flash memory devices organized as 8,388,608 bytes. Data appears on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access times of 90, 100, and 120 ns. The device is offered in standard 48-pin TSOP and 63-ball FBGA packages. To eliminate bus contention each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0 Volt power supply (3.0 V to 3.6 V) for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The VersatileIO™ (VIO) control allows the host system to set the voltage levels that the device generates and tolerates on CE# and DQ I/Os to the same voltage level that is asserted on VIO. V IO is available in two configurations (1.8–2.9 V and 3.0–5.0 V) for operation in various system environments. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, by reading the DQ7 (Data# Polling), or DQ6 (tog- 4 gle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read boot-up firmware from the Flash memory device. The device offers a standby mode as a power-saving feature. Once the system places the device into the standby mode power consumption is greatly reduced. The SecSiTM (Secured Silicon) Sector provides an minimum 256-byte area for code or data that can be permanently protected. Once this sector is protected, no further programming or erasing within the sector can occur. The accelerated program (ACC) feature allows the system to program the device at a much faster rate. When ACC is pulled high to VHH, the device enters the Unlock Bypass mode, enabling the user to reduce the time needed to do the program operation. This feature is intended to increase factory throughput during system production, but may also be used in the field if desired. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunnelling. The data is programmed using hot electron injection. Am29LV065D February 16, 2006 TABLE OF CONTENTS Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 7 Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Ordering Information . . . . . . . . . . . . . . . . . . . . . . 10 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 11 Table 1. Am29LV065D Device Bus Operations ..............................11 VersatileIOTM (VIO) Control ...................................................... 11 Requirements for Reading Array Data ................................... 11 Writing Commands/Command Sequences ............................ 12 Accelerated Program Operation ............................................. 12 Autoselect Functions .............................................................. 12 Standby Mode ........................................................................ 12 Automatic Sleep Mode ........................................................... 12 RESET#: Hardware Reset Pin ............................................... 12 Output Disable Mode .............................................................. 13 Table 2. Sector Address Table ........................................................13 Autoselect Mode ..................................................................... 17 Table 3. Am29LV065D Autoselect Codes, (High Voltage Method) 17 Sector Group Protection and Unprotection ............................. 18 Table 4. Sector Group Protection/Unprotection Address Table .....18 Temporary Sector Group Unprotect ....................................... 19 Figure 1. Temporary Sector Group Unprotect Operation................ 19 Figure 2. In-System Sector Group Protect/Unprotect Algorithms ... 20 SecSi (Secured Silicon) Sector Flash Memory Region .......... 21 Table 5. SecSi Sector Contents ......................................................21 Figure 3. SecSi Sector Protect Verify.............................................. 22 Hardware Data Protection ...................................................... 22 Low VCC Write Inhibit ............................................................ 22 Write Pulse “Glitch” Protection ............................................... 22 Logical Inhibit .......................................................................... 22 Power-Up Write Inhibit ............................................................ 22 Common Flash Memory Interface (CFI) . . . . . . . 22 Table 6. CFI Query Identification String .......................................... 23 System Interface String................................................................... 23 Table 8. Device Geometry Definition .............................................. 23 Table 9. Primary Vendor-Specific Extended Query ........................ 24 Command Definitions . . . . . . . . . . . . . . . . . . . . . . 25 Reading Array Data ................................................................ 25 Reset Command ..................................................................... 25 Autoselect Command Sequence ............................................ 25 Enter SecSi Sector/Exit SecSi Sector Command Sequence .............................................................. 25 Byte Program Command Sequence ....................................... 26 Unlock Bypass Command Sequence ..................................... 26 Figure 4. Program Operation .......................................................... 26 Chip Erase Command Sequence ........................................... 27 Sector Erase Command Sequence ........................................ 27 Erase Suspend/Erase Resume Commands ........................... 27 Table 10. Am29LV065D Command Definitions ............................. 29 Write Operation Status . . . . . . . . . . . . . . . . . . . . 30 DQ7: Data# Polling ................................................................. 30 Figure 6. Data# Polling Algorithm .................................................. 30 RY/BY#: Ready/Busy# ............................................................ 31 DQ6: Toggle Bit I .................................................................... 31 Figure 7. Toggle Bit Algorithm........................................................ 31 DQ2: Toggle Bit II ................................................................... 32 Reading Toggle Bits DQ6/DQ2 ............................................... 32 DQ5: Exceeded Timing Limits ................................................ 32 DQ3: Sector Erase Timer ....................................................... 32 Table 11. Write Operation Status ................................................... 33 Absolute Maximum Ratings . . . . . . . . . . . . . . . . 34 Figure 8. Maximum Negative Overshoot Waveform ..................... 34 Figure 9. Maximum Positive Overshoot Waveform....................... 34 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 34 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 35 Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) ............................................................. 36 Figure 11. Typical ICC1 vs. Frequency ............................................ 36 Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Figure 12. Test Setup.................................................................... 37 Table 12. Test Specifications ......................................................... 37 Figure 13. Input Waveforms and Measurement Levels ................. 37 Key to Switching Waveforms. . . . . . . . . . . . . . . . 37 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 38 Read-Only Operations ........................................................... 38 Figure 14. Read Operation Timings ............................................... 38 Hardware Reset (RESET#) .................................................... 39 Figure 15. Reset Timings ............................................................... 39 Erase and Program Operations .............................................. 40 Figure 16. Program Operation Timings.......................................... Figure 17. Accelerated Program Timing Diagram.......................... Figure 18. Chip/Sector Erase Operation Timings .......................... Figure 19. Data# Polling Timings (During Embedded Algorithms). Figure 20. Toggle Bit Timings (During Embedded Algorithms)...... Figure 21. DQ2 vs. DQ6................................................................. 41 41 42 43 44 44 Temporary Sector Unprotect .................................................. 45 Figure 22. Temporary Sector Group Unprotect Timing Diagram ... 45 Figure 23. Sector Group Protect and Unprotect Timing Diagram .. 46 Figure 24. Alternate CE# Controlled Write (Erase/Program) Operation Timings .............................................. 48 Erase And Programming Performance . . . . . . . 49 Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 49 TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 49 Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 50 TS 048—48-Pin Standard Pinout Thin Small Outline Package (TSOP) ..................................................................... 50 FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 11 x 12 mm package .............................................................. 51 Figure 5. Erase Operation............................................................... 28 Command Definitions ............................................................. 29 February 16, 2006 Am29LV065D 5 PRODUCT SELECTOR GUIDE Part Number Am29LV065D VCC = 3.0–3.6 V, VIO = 3.0–5.0 V Speed Option 90R 120R VCC = 3.0–3.6 V, VIO = 1.8–2.9 V 101R 121R Max Access Time (ns) 90 100 120 CE# Access Time (ns) 90 100 120 OE# Access Time (ns) 35 35 50 Note: See “AC Characteristics” for full specifications. BLOCK DIAGRAM DQ0–DQ7 RY/BY# VCC Sector Switches VSS WE# ACC VIO Erase Voltage Generator RESET# State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic CE# OE# VCC Detector Address Latch STB Timer A0–A22 6 Input/Output Buffers Am29LV065D STB Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix February 16, 2006 CONNECTION DIAGRAMS NC A22 A16 A15 A14 A13 A12 A11 A9 A8 WE# RESET# ACC RY/BY# A18 A7 A6 A5 A4 A3 A2 A1 NC NC February 16, 2006 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48-Pin Standard TSOP Am29LV065D 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 NC NC A17 VSS A20 A19 A10 DQ7 DQ6 DQ5 DQ4 VCC VIO A21 DQ3 DQ2 DQ1 DQ0 OE# VSS CE# A0 NC NC 7 CONNECTION DIAGRAMS 63-Ball FBGA Top View, Balls Facing Down A8 B8 L8 M8 NC* NC* NC* NC* A7 B7 C7 D7 E7 F7 G7 H7 J7 K7 L7 M7 NC* NC* A14 A13 A15 A16 A17 NC A20 VSS NC* NC* C6 D6 E6 F6 G6 H6 J6 K6 A9 A8 A11 A12 A19 A10 DQ6 DQ7 C5 D5 E5 F5 G5 H5 J5 K5 WE# RESET# A22 NC DQ5 NC VCC DQ4 C4 D4 E4 F4 G4 H4 J4 K4 RY/BY# ACC NC NC DQ2 DQ3 VIO A21 C3 D3 E3 F3 G3 H3 J3 K3 A7 A18 A6 A5 DQ0 NC NC DQ1 A2 C2 D2 E2 F2 G2 H2 J2 K2 L2 M2 NC* A3 A4 A2 A1 A0 CE# OE# VSS NC* NC* L1 M1 NC* NC* A1 NC* B1 NC* * Balls are shorted together via the substrate but not connected to the die. Special Handling Instructions for FBGA Package Special handling is required for Flash Memory products in FBGA packages. 8 Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Am29LV065D February 16, 2006 PIN DESCRIPTION A0–A22 = 23 Addresses inputs DQ0–DQ7 = 8 Data inputs/outputs CE# = Chip Enable input OE# = Output Enable input WE# = Write Enable input ACC = Acceleration Input RESET# = Hardware Reset Pin input RY/BY# = Ready/Busy output VCC = 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) LOGIC SYMBOL 23 A0–A22 CE# 8 DQ0–DQ7 OE# WE# VIO = Output Buffer power VSS = Device Ground NC = Pin Not Connected Internally February 16, 2006 ACC RESET# RY/BY# VIO Am29LV065D 9 ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29LV065D U 90R WH I N OPTIONAL PROCESSING Blank = Standard Processing N = 16-byte ESN devices (Contact an AMD representative for more information) TEMPERATURE RANGE I = Industrial (–40°C to +85°C) F = Industrial (–40°C to +85°C) with Pb-free package PACKAGE TYPE E = 48-Pin Standard Pinout Thin Small Outline Package (TS 048) WH = 63-Ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 11 x 12 mm package (FBE063) SPEED OPTION See Product Selector Guide and Valid Combinations SECTOR ARCHITECTURE U = Uniform sector device DEVICE NUMBER/DESCRIPTION Am29LV065D 64 Megabit (8 M x 8-Bit) CMOS Uniform Sector Flash Memory with VersatileIO™ Control 3.0 Volt-only Read, Program, and Erase Valid Combinations for TSOP Packages AM29LV065DU90R, AM29LV065DU90R AM29LV065DU101R, AM29LV065DU101R AM29LV065DU120R, AM29LV065DU120R AM29LV065DU121R, AM29LV065DU121R EI, EF EI, EF Valid Combinations for FBGA Packages Speed/VIO Range 90ns, VIO = 3.0 V – 5.0 V 100 ns, VIO = 1.8 V – 2.9 V Package Marking Order Number AM29LV065DU90R AM29LV065DU101R 120 ns, VIO = 3.0 V – 5.0 V AM29LV065DU120R 120 ns, VIO = 1.8 V – 2.9 V AM29LV065DU121R WHI, WHF WHI, WHF L065DU90R L065DU01R L065DU12R L065DU21R Speed/ VIO Range 90 ns, VIO = I, 3.0 V – 5.0 V F 100 ns, VIO = 1.8 V – 2.9 V 120 ns, VIO = 3.0 V – 5.0 V I, F 120 ns, VIO = 1.8 V – 2.9 V Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. 10 Am29LV065D February 16, 2006 DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the Table 1. register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Am29LV065D Device Bus Operations CE# OE# WE# RESET# ACC Addresses (Note 2) DQ0– DQ7 Read L L H H X AIN DOUT Write (Program/Erase) L H L H X AIN (Note 4) Accelerated Program L H L H VHH AIN (Note 4) VCC ± 0.3 V X X VCC ± 0.3 V H X High-Z Output Disable L H H H X X High-Z Reset X X X L X X High-Z Sector Group Protect (Note 2) L H L VID X SA, A6 = L, A1 = H, A0 = L (Note 4) Sector Group Unprotect (Note 2) L H L VID X SA, A6 = H, A1 = H, A0 = L (Note 4) Temporary Sector Group Unprotect X X X VID X AIN (Note 4) Operation Standby Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 8.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A22:A0. Sector addresses are A22:A16. 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group Protection and Unprotection” section. 3. All sectors are unprotected when shipped from the factory (The SecSi Sector may be factory protected depending on version ordered.) 4. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2). VersatileIOTM (VIO) Control Requirements for Reading Array Data The VersatileIO™ (VIO) control allows the host system to set the voltage levels that the device generates and tolerates on CE# and DQ I/Os to the same voltage level that is asserted on VIO. V IO is available in two configurations (1.8–2.9 V and 3.0–5.0 V) for operation in various system environments. To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. For example, a VI/O of 4.5–5.0 volts allows for I/O at the 5 volt level, driving and receiving signals to and from other 5 V devices on the same data bus. February 16, 2006 The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains Am29LV065D 11 enabled for read access until the command register contents are altered. See “VersatileIOTM (VIO) Control” for more information. Refer to the AC Read-Only Operations table for timing specifications and to Figure 14 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a byte, instead of four. The “Byte Program Command Sequence” section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address space that each sector occupies. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. Accelerated Program Operation The device offers accelerated program operations through the ACC function. This function is primarily intended to allow faster manufacturing throughput during system production. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the ACC pin returns the device to normal operation. Note that the ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information. 12 Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (t CE ) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. I CC3 in the DC Characteristics table represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. I CC4 in the DC Characteristics table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Am29LV065D February 16, 2006 rithms). The system can read data tRH after the RESET# pin returns to VIH. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algo- Table 2. Refer to the AC Characteristics tables for RESET# parameters and to Figure 15 for the timing diagram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Sector Address Table Sector A22 A21 A20 A19 A18 A17 A16 8-bit Address Range (in hexadecimal) SA0 0 0 0 0 0 0 0 000000–00FFFF SA1 0 0 0 0 0 0 1 010000–01FFFF SA2 0 0 0 0 0 1 0 020000–02FFFF SA3 0 0 0 0 0 1 1 030000–03FFFF SA4 0 0 0 0 1 0 0 040000–04FFFF SA5 0 0 0 0 1 0 1 050000–05FFFF SA6 0 0 0 0 1 1 0 060000–06FFFF SA7 0 0 0 0 1 1 1 070000–07FFFF SA8 0 0 0 1 0 0 0 080000–08FFFF SA9 0 0 0 1 0 0 1 090000–09FFFF SA10 0 0 0 1 0 1 0 0A0000–0AFFFF SA11 0 0 0 1 0 1 1 0B0000–0BFFFF SA12 0 0 0 1 1 0 0 0C0000–0CFFFF SA13 0 0 0 1 1 0 1 0D0000–0DFFFF SA14 0 0 0 1 1 1 0 0E0000–0EFFFF SA15 0 0 0 1 1 1 1 0F0000–0FFFFF SA16 0 0 1 0 0 0 0 100000–10FFFF SA17 0 0 1 0 0 0 1 110000–11FFFF SA18 0 0 1 0 0 1 0 120000–12FFFF SA19 0 0 1 0 0 1 1 130000–13FFFF SA20 0 0 1 0 1 0 0 140000–14FFFF SA21 0 0 1 0 1 0 1 150000–15FFFF SA22 0 0 1 0 1 1 0 160000–16FFFF SA23 0 0 1 0 1 1 1 170000–17FFFF SA24 0 0 1 1 0 0 0 180000–18FFFF SA25 0 0 1 1 0 0 1 190000–19FFFF SA26 0 0 1 1 0 1 0 1A0000–1AFFFF February 16, 2006 Am29LV065D 13 Table 2. 14 Sector Address Table (Continued) Sector A22 A21 A20 A19 A18 A17 A16 8-bit Address Range (in hexadecimal) SA27 0 0 1 1 0 1 1 1B0000–1BFFFF SA28 0 0 1 1 1 0 0 1C0000–1CFFFF SA29 0 0 1 1 1 0 1 1D0000–1DFFFF SA30 0 0 1 1 1 1 0 1E0000–1EFFFF SA31 0 0 1 1 1 1 1 1F0000–1FFFFF SA32 0 1 0 0 0 0 0 200000–20FFFF SA33 0 1 0 0 0 0 1 210000–21FFFF SA34 0 1 0 0 0 1 0 220000–22FFFF SA35 0 1 0 0 0 1 1 230000–23FFFF SA36 0 1 0 0 1 0 0 240000–24FFFF SA37 0 1 0 0 1 0 1 250000–25FFFF SA38 0 1 0 0 1 1 0 260000–26FFFF SA39 0 1 0 0 1 1 1 270000–27FFFF SA40 0 1 0 1 0 0 0 280000–28FFFF SA41 0 1 0 1 0 0 1 290000–29FFFF SA42 0 1 0 1 0 1 0 2A0000–2AFFFF SA43 0 1 0 1 0 1 1 2B0000–2BFFFF SA44 0 1 0 1 1 0 0 2C0000–2CFFFF SA45 0 1 0 1 1 0 1 2D0000–2DFFFF SA46 0 1 0 1 1 1 0 2E0000–2EFFFF SA47 0 1 0 1 1 1 1 2F0000–2FFFFF SA48 0 1 1 0 0 0 0 300000–30FFFF SA49 0 1 1 0 0 0 1 310000–31FFFF SA50 0 1 1 0 0 1 0 320000–32FFFF SA51 0 1 1 0 0 1 1 330000–33FFFF SA52 0 1 1 0 1 0 0 340000–34FFFF SA53 0 1 1 0 1 0 1 350000–35FFFF SA54 0 1 1 0 1 1 0 360000–36FFFF SA55 0 1 1 0 1 1 1 370000–37FFFF SA56 0 1 1 1 0 0 0 380000–38FFFF SA57 0 1 1 1 0 0 1 390000–39FFFF SA58 0 1 1 1 0 1 0 3A0000–3AFFFF SA59 0 1 1 1 0 1 1 3B0000–3BFFFF SA60 0 1 1 1 1 0 0 3C0000–3CFFFF SA61 0 1 1 1 1 0 1 3D0000–3DFFFF Am29LV065D February 16, 2006 Table 2. Sector Address Table (Continued) Sector A22 A21 A20 A19 A18 A17 A16 8-bit Address Range (in hexadecimal) SA62 0 1 1 1 1 1 0 3E0000–3EFFFF SA63 0 1 1 1 1 1 1 3F0000–3FFFFF SA64 1 0 0 0 0 0 0 400000–40FFFF SA65 1 0 0 0 0 0 1 410000–41FFFF SA66 1 0 0 0 0 1 0 420000–42FFFF SA67 1 0 0 0 0 1 1 430000–43FFFF SA68 1 0 0 0 1 0 0 440000–44FFFF SA69 1 0 0 0 1 0 1 450000–45FFFF SA70 1 0 0 0 1 1 0 460000–46FFFF SA71 1 0 0 0 1 1 1 470000–47FFFF SA72 1 0 0 1 0 0 0 480000–48FFFF SA73 1 0 0 1 0 0 1 490000–49FFFF SA74 1 0 0 1 0 1 0 4A0000–4AFFFF SA75 1 0 0 1 0 1 1 4B0000–4BFFFF SA76 1 0 0 1 1 0 0 4C0000–4CFFFF SA77 1 0 0 1 1 0 1 4D0000–4DFFFF SA78 1 0 0 1 1 1 0 4E0000–4EFFFF SA79 1 0 0 1 1 1 1 4F0000–4FFFFF SA80 1 0 1 0 0 0 0 500000–50FFFF SA81 1 0 1 0 0 0 1 510000–51FFFF SA82 1 0 1 0 0 1 0 520000–52FFFF SA83 1 0 1 0 0 1 1 530000–53FFFF SA84 1 0 1 0 1 0 0 540000–54FFFF SA85 1 0 1 0 1 0 1 550000–55FFFF SA86 1 0 1 0 1 1 0 560000–56FFFF SA87 1 0 1 0 1 1 1 570000–57FFFF SA88 1 0 1 1 0 0 0 580000–58FFFF SA89 1 0 1 1 0 0 1 590000–59FFFF SA90 1 0 1 1 0 1 0 5A0000–5AFFFF SA91 1 0 1 1 0 1 1 5B0000–5BFFFF SA92 1 0 1 1 1 0 0 5C0000–5CFFFF SA93 1 0 1 1 1 0 1 5D0000–5DFFFF SA94 1 0 1 1 1 1 0 5E0000–5EFFFF SA95 1 0 1 1 1 1 1 5F0000–5FFFFF SA96 1 1 0 0 0 0 0 600000–60FFFF February 16, 2006 Am29LV065D 15 Table 2. Sector Address Table (Continued) Sector A22 A21 A20 A19 A18 A17 A16 8-bit Address Range (in hexadecimal) SA97 1 1 0 0 0 0 1 610000–61FFFF SA98 1 1 0 0 0 1 0 620000–62FFFF SA99 1 1 0 0 0 1 1 630000–63FFFF SA100 1 1 0 0 1 0 0 640000–64FFFF SA101 1 1 0 0 1 0 1 650000–65FFFF SA102 1 1 0 0 1 1 0 660000–66FFFF SA103 1 1 0 0 1 1 1 670000–67FFFF SA104 1 1 0 1 0 0 0 680000–68FFFF SA105 1 1 0 1 0 0 1 690000–69FFFF SA106 1 1 0 1 0 1 0 6A0000–6AFFFF SA107 1 1 0 1 0 1 1 6B0000–6BFFFF SA108 1 1 0 1 1 0 0 6C0000–6CFFFF SA109 1 1 0 1 1 0 1 6D0000–6DFFFF SA110 1 1 0 1 1 1 0 6E0000–6EFFFF SA111 1 1 0 1 1 1 1 6F0000–6FFFFF SA112 1 1 1 0 0 0 0 700000–70FFFF SA113 1 1 1 0 0 0 1 710000–71FFFF SA114 1 1 1 0 0 1 0 720000–72FFFF SA115 1 1 1 0 0 1 1 730000–73FFFF SA116 1 1 1 0 1 0 0 740000–74FFFF SA117 1 1 1 0 1 0 1 750000–75FFFF SA118 1 1 1 0 1 1 0 760000–76FFFF SA119 1 1 1 0 1 1 1 770000–77FFFF SA120 1 1 1 1 0 0 0 780000–78FFFF SA121 1 1 1 1 0 0 1 790000–79FFFF SA122 1 1 1 1 0 1 0 7A0000–7AFFFF SA123 1 1 1 1 0 1 1 7B0000–7BFFFF SA124 1 1 1 1 1 0 0 7C0000–7CFFFF SA125 1 1 1 1 1 0 1 7D0000–7DFFFF SA126 1 1 1 1 1 1 0 7E0000–7EFFFF SA127 1 1 1 1 1 1 1 7F0000–7FFFFF Note: All sectors are 64 Kbytes in size. 16 Am29LV065D February 16, 2006 Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (8.5 V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 3. Description Table 3. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 2). Table 3 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 10. This method does not require V ID. Refer to the Autoselect Command Sequence section for more information. Am29LV065D Autoselect Codes, (High Voltage Method) CE# OE# WE# A22 to A16 A15 to A10 A9 A8 to A7 A6 A5 to A2 A1 A0 DQ7 to DQ0 Manufacturer ID: AMD L L H X X VID X L X L L 01h Device ID: Am29LV065D L L H X X VID X L X L H 93h Sector Protection Verification L L H SA X VID X L X H L 80h (protected), 00h (unprotected) SecSi Sector Indicator Bit (DQ7) L L H X X VID X L X H H 90h (factory locked), 10h (not factory locked) Legend: L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. February 16, 2006 Am29LV065D 17 Sector Group Protection and Unprotection Table 4. Sector Group Protection/Unprotection Address Table The hardware sector group protection feature disables both program and erase operations in any sector group. In this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see Table 4). The hardware sector group unprotection feature re-enables both program and erase operations in previously protected sector groups. Sector group protection/unprotection can be implemented via two methods. Sector Group A22–A18 SA0–SA3 00000 Sector protection and unprotection requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 23 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector group unprotect, all unprotected sector groups must first be protected prior to the first sector group unprotect write cycle. The device is shipped with all sector groups unprotected. AMD offers the option of programming and protecting sector groups at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. It is possible to determine whether a sector group is protected or unprotected. See the Autoselect Mode section for details. SA4–SA7 00001 SA8–SA11 00010 SA12–SA15 00011 SA16–SA19 00100 SA20–SA23 00101 SA24–SA27 00110 SA28–SA31 00111 SA32–SA35 01000 SA36–SA39 01001 SA40–SA43 01010 SA44–SA47 01011 SA48–SA51 01100 SA52–SA55 01101 SA56–SA59 01110 SA60–SA63 01111 SA64–SA67 10000 SA68–SA71 10001 SA72–SA75 10010 SA76–SA79 10011 SA80–SA83 10100 SA84–SA87 10101 SA88–SA91 10110 SA92–SA95 10111 SA96–SA99 11000 SA100–SA103 11001 SA104–SA107 11010 SA108–SA111 11011 SA112–SA115 11100 SA116–SA119 11101 SA120–SA123 11110 SA124–SA127 11111 Note: All sector groups are 256 Kbytes in size. 18 Am29LV065D February 16, 2006 Temporary Sector Group Unprotect (Note: In this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see Table 4)). START This feature allows temporary unprotection of previously protected sector groups to change data in-system. The Sector Group Unprotect mode is activated by setting the RESET# pin to VID (8.5 V – 12.5 V). During this mode, formerly protected sector groups can be programmed or erased by selecting the sector group addresses. Once V ID is removed from the RESET# pin, all the previously protected sector groups are protected again. Figure 1 shows the algorithm, and Figure 22 shows the timing diagrams, for this feature. RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Group Unprotect Completed (Note 2) Notes: 1. All protected sector groups unprotected. 2. All previously protected sector groups are protected once again. Figure 1. Temporary Sector Group Unprotect Operation February 16, 2006 Am29LV065D 19 START START PLSCNT = 1 RESET# = VID Wait 1 μs Temporary Sector Group Unprotect Mode No PLSCNT = 1 Protect all sector groups: The indicated portion of the sector group protect algorithm must be performed for all unprotected sector groups prior to issuing the first sector group unprotect address RESET# = VID Wait 1 μs First Write Cycle = 60h? First Write Cycle = 60h? Temporary Sector Group Unprotect Mode Yes Yes Set up sector group address No Sector Group Protect: Write 60h to sector group address with A6 = 0, A1 = 1, A0 = 0 All sector groups protected? Yes Set up first sector group address Sector Group Unprotect: Write 60h to sector group address with A6 = 1, A1 = 1, A0 = 0 Wait 150 µs Increment PLSCNT No Verify Sector Group Protect: Write 40h to sector group address twith A6 = 0, A1 = 1, A0 = 0 Reset PLSCNT = 1 Wait 15 ms Read from sector group address with A6 = 0, A1 = 1, A0 = 0 Verify Sector Group Unprotect: Write 40h to sector group address with A6 = 1, A1 = 1, A0 = 0 Increment PLSCNT No No PLSCNT = 25? Read from sector group address with A6 = 1, A1 = 1, A0 = 0 Data = 01h? Yes No Yes Device failed Protect another sector group? Yes No PLSCNT = 1000? No Yes Remove VID from RESET# Device failed Write reset command Sector Group Protect Algorithm Set up next sector group address Data = 00h? Yes Last sector group verified? No Yes Sector Group Protect complete Sector Group Unprotect Algorithm Remove VID from RESET# Write reset command Sector Group Unprotect complete Figure 2. 20 In-System Sector Group Protect/Unprotect Algorithms Am29LV065D February 16, 2006 SecSi (Secured Silicon) Sector Flash Memory Region Factory Locked: SecSi Sector Programmed and Protected At the Factory The SecSi (Secured Silicon) Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The SecSi Sector is 256 bytes in length, and uses a SecSi Sector Indicator Bit (DQ7) to indicate whether or not the SecSi Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. In devices with an ESN, the SecSi Sector is protected when the device is shipped from the factory. The SecSi Sector cannot be modified in any way. A factory locked device has an 16-byte random ESN at addresses 000000h–00000Fh. AMD offers the device with the SecSi Sector either facto r y locked or c ustomer lock able. The factory-locked version is always protected when shipped from the factory, and has the SecSi (Secured Silicon) Sector Indicator Bit permanently set to a “1.” The customer-lockable version is shipped with the SecSi Sector unprotected, allowing customers to utilize that sector in any manner they choose. The customer-lockable version also has the SecSi Sector Indicator Bit permanently set to a “0.” Thus, the SecSi Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. The SecSi sector address space in this device is allocated as follows: Table 5. SecSi Sector Address Range SecSi Sector Contents Standard ExpressFlash Factory Locked Factory Locked 000000h–00000Fh ESN ESN or determined by customer 000010h–00007Fh, 000400h–00047Fh Unavailable Determined by customer Customer Lockable Determined by customer The system accesses the SecSi Sector through a command sequence (see “Enter SecSi Sector/Exit SecSi Sector Command Sequence”). After the system has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the first sector (SA0). This mode of operation continues until the system issues the Exit SecSi Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to sector SA0. February 16, 2006 Customers may opt to have their code programmed by AMD through the AMD ExpressFlash service. The devices are then shipped from AMD’s factory with the SecSi Sector permanently locked. Contact an AMD representative for details on using AMD’s ExpressFlash service. Customer Lockable: SecSi Sector NOT Programmed or Protected At the Factory As an alternative to the factory-locked version, the device may be ordered such that the customer may program and protect the 256-byte SecSi sector. The SecSi Sector is one-time programmable, may not be erased, and can be locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the SecSi Sector. The SecSi Sector area can be protected using one of the following procedures: ■ Write the three-cycle Enter SecSi Sector Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This allows in-system protection of the SecSi Sector without raising any device pin to a high voltage. Note that this method is only applicable to the SecSi Sector. ■ To verify the protect/unprotect status of the SecSi Sector, follow the algorithm shown in Figure 3. Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the remainder of the array. The SecSi Sector protection must be used with caution since, once protected, there is no procedure available for unprotecting the SecSi Sector area and none of the bits in the SecSi Sector memory space can be modified in any way. Am29LV065D 21 mand definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during V CC power-up and power-down transitions, or from system noise. START RESET# = VIH or VID Wait 1 μs Write 60h to any address Write 40h to SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 Read from SecSi Sector address with A6 = 0, A1 = 1, A0 = 0 If data = 00h, SecSi Sector is unprotected. If data = 01h, SecSi Sector is protected. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when V CC is greater than VLKO. Remove VIH or VID from RESET# Write reset command Write Pulse “Glitch” Protection SecSi Sector Protect Verify complete Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Figure 3. Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. SecSi Sector Protect Verify Power-Up Write Inhibit Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 10 for com- If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. COMMON FLASH MEMORY INTERFACE (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, any time the device is ready to read array data (addresses are don’t care). The system can read CFI information at the ad- 22 dresses given in Tables 6–9. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 6–9. The system must write the reset command to return the device to the autoselect mode. For further information, please refer to the CFI Specification and CFI Publication 100, available via the World Wide Web at http://www.amd.com/flash/cfi.html. Alternatively, contact an AMD representative for copies of these documents. Am29LV065D February 16, 2006 Table 6. CFI Query Identification String Addresses (x8) Data Description 10h 11h 12h 51h 52h 59h Query Unique ASCII string “QRY” 13h 14h 02h 00h Primary OEM Command Set 15h 16h 40h 00h Address for Primary Extended Table 17h 18h 00h 00h Alternate OEM Command Set (00h = none exists) 19h 1Ah 00h 00h Address for Alternate OEM Extended Table (00h = none exists) Table 7. System Interface String Addresses (x8) Data Description 1Bh 27h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 36h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 00h VPP Min. voltage (00h = no VPP pin present) 1Eh 00h VPP Max. voltage (00h = no VPP pin present) 1Fh 04h Typical timeout per single byte write 2N µs 20h 00h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 0Ah Typical timeout per individual block erase 2N ms 22h 00h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 05h Max. timeout for byte write 2N times typical 24h 00h Max. timeout for buffer write 2N times typical 25h 04h Max. timeout per individual block erase 2N times typical 26h 00h Max. timeout for full chip erase 2N times typical (00h = not supported) Table 8. Device Geometry Definition Addresses (x8) Data 27h 17h Device Size = 2N byte 28h 29h 00h 00h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 00h 00h Max. number of bytes in multi-byte write = 2N (00h = not supported) 2Ch 01h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 7Fh 00h 00h 01h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) February 16, 2006 Description Am29LV065D 23 31h 32h 33h 34h 00h 00h 00h 00h Erase Block Region 2 Information (refer to CFI publication 100) 35h 36h 37h 38h 00h 00h 00h 00h Erase Block Region 3 Information (refer to CFI publication 100) 39h 3Ah 3Bh 3Ch 00h 00h 00h 00h Erase Block Region 4 Information (refer to CFI publication 100) Table 9. Primary Vendor-Specific Extended Query Addresses (x8) Data Description 40h 41h 42h 50h 52h 49h Query-unique ASCII string “PRI” 43h 31h Major version number, ASCII 44h 31h Minor version number, ASCII 45h 01h Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Silicon Revision Number (Bits 7-2) 24 46h 02h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 04h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 01h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 04h Sector Protect/Unprotect scheme 04 = 29LV800 mode 4Ah 00h Simultaneous Operation 00 = Not Supported, X = Number of Sectors in Bank 4Bh 000h Burst Mode Type 00 = Not Supported, 01 = Supported 4Ch 00h Page Mode Type 00 = Not Supported 4Dh B5h 4Eh C5h 4Fh 00h ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 02h = Bottom Boot Device, 03h = Top Boot Device Am29LV065D February 16, 2006 COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 10 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next section, Reset Command, for more information. See also “VersatileIOTM (VIO) Control” in the Device Bus Operations section for more information. The Read-Only Operations table provides the read parameters, and Figure 14 shows the timing diagram. Reset Command Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to the read mode. If the program command sequence is written while the device is in the Erase Suspend mode, February 16, 2006 writing the reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to read several identifier codes at specific addresses: Identifier Code Address Manufacturer ID 00h Device ID 01h SecSi Sector Factory Protect 03h Sector Group Protect Verify (SA)02h Table 10 shows the address and data requirements. The command sequence is an alternative to the high voltage method shown in Table 3. The autoselect command sequence may be written to an address that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The system may read at any address any number of times without initiating another autoselect command sequence. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend). Enter SecSi Sector/Exit SecSi Sector Command Sequence The SecSi Sector region provides a secured data area containing an 16-byte random Electronic Serial Number (ESN). The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi Sector command sequence. The device continues to access the SecSi Sector region until the system issues the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence returns the de- Am29LV065D 25 vice to normal operation. Table 10 shows the address and data requirements for both command sequences. See also “SecSi (Secured Silicon) Sector Flash Memory Region” for further information. Byte Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 10 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to the Write Operation Status section for information on these status bits. ming time. Table 10 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h. The second cycle must contain the data 00h. The device then returns to the read mode. The device offers accelerated program operations through the ACC pin. When the system asserts VHH on the ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the ACC pin to accelerate the operation. Note that the ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. Figure 4 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 16 for timing diagrams. Any commands written to the device during the Embedded Program Algorithm are ignored. The SecSi sector, autoselect, and CFI functions are not available when a program function is in progress. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. START Write Program Command Sequence Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause the device to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Data Poll from System Embedded Program algorithm in progress Verify Data? No Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total program- 26 Yes Increment Address No Last Address? Yes Programming Completed Note: See Table 10 for program command sequence. Am29LV065D Figure 4. Program Operation February 16, 2006 Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 10 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status section for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. The SecSi Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. If that occurs, the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 10 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time February 16, 2006 between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to the read mode. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing sector. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing sector. Refer to the Write Operation Status section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. The SecSi Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written Am29LV065D 27 during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. START After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits. Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard byte program operation. Refer to the Write Operation Status section for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence sections for details. To resume the sector erase operation, the system must write the Erase Resume command. The address of the erase-suspended sector is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. 28 No Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes: 1. See Table 10 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Am29LV065D Figure 5. Erase Operation February 16, 2006 Command Definitions Table 10. Read (Note 5) Autoselect (Note 7) Reset (Note 6) Bus Cycles (Notes 2–4) Cycles Command Sequence (Note 1) Am29LV065D Command Definitions Addr Data 1 RA RD First Second Addr Data Third Addr Fourth Data Addr Fifth Data 1 XXX F0 Manufacturer ID 4 XXX AA XXX 55 XXX 90 X00 01 Device ID 4 XXX AA XXX 55 XXX 90 X01 93 SecSi Sector Factory Protect (Note 8) 4 XXX AA XXX 55 XXX 90 X03 80/00 Sector Group Protect Verify (Note 9) 4 XXX AA XXX 55 XXX 90 (SA)X02 00/01 Sixth Addr Data Addr Data Enter SecSi Sector Region 3 XXX AA XXX 55 XXX 88 Exit SecSi Sector Region 4 XXX AA XXX 55 XXX 90 XXX 00 Program 4 XXX AA XXX 55 XXX A0 PA PD Unlock Bypass XXX AA XXX 55 XXX 20 XXX A0 PA PD Unlock Bypass Reset (Note 11) 3 2 2 XXX 90 XXX 00 Chip Erase 6 XXX AA XXX 55 XXX 80 XXX AA XXX 55 XXX 10 Sector Erase 6 XXX AA XXX 55 XXX 80 XXX AA XXX 55 SA 30 Erase Suspend (Note 12) 1 XXX B0 Erase Resume (Note 13) 1 XXX 30 CFI Query (Note 14) 1 XX 98 Unlock Bypass Program (Note 10) Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. Notes: 1. See Table 1 for description of bus operations. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A22–A16 uniquely select any sector. 9. The data is 00h for an unprotected sector group and 01h for a protected sector group. 2. All values are in hexadecimal. 3. Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 10. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 4. Unless otherwise noted, address bits A22–A12 are don’t cares. 5. No unlock or command cycles required when device is in read mode. 11. The Unlock Bypass Reset command is required to return to the read mode when the device is in the unlock bypass mode. 6. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when the device is in the autoselect mode, or if DQ5 goes high (while the device is providing status information). 7. The fourth cycle of the autoselect command sequence is a read cycle. See the Autoselect Command Sequence section for more information. 8. 12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 13. The Erase Resume command is valid only during the Erase Suspend mode. 14. Command is valid when device is ready to read array data or when device is in autoselect mode. The data is 80h for factory locked and 00h for not factory locked. February 16, 2006 Am29LV065D 29 WRITE OPERATION STATUS The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 11 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. valid data, the data outputs on DQ0–DQ6 may be still invalid. Valid data on DQ0–DQ7 will appear on successive read cycles. Table 11 shows the outputs for Data# Polling on DQ7. Figure 6 shows the Data# Polling algorithm. Figure 19 in the AC Characteristics section shows the Data# Polling timing diagram. DQ7: Data# Polling START The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. Read DQ7–DQ0 Addr = VA During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the read mode. DQ7 = Data? No No During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has 30 Yes DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Am29LV065D Figure 6. Data# Polling Algorithm February 16, 2006 RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. Table 11 shows the outputs for Toggle Bit I on DQ6. Figure 7 shows the toggle bit algorithm. Figure 20 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 21 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or the device is in the erase-suspend-read mode. START Read DQ7–DQ0 Table 11 shows the outputs for RY/BY#. Read DQ7–DQ0 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. Toggle Bit = Toggle? Yes No During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. Read DQ7–DQ0 Twice Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. February 16, 2006 DQ5 = 1? Yes After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). No Am29LV065D Figure 7. Toggle Bit Algorithm 31 DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7). DQ5: Exceeded Timing Limits DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 11 to compare outputs for DQ2 and DQ6. DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. Figure 7 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 20 shows the toggle bit timing diagram. Figure 21 shows the differences between DQ2 and DQ6 in graphical form. Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if the device was previously in the erase-suspend-program mode). Reading Toggle Bits DQ6/DQ2 Refer to Figure 7 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor 32 The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.” DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 11 shows the status of DQ3 relative to the other status bits. Am29LV065D February 16, 2006 Table 11. Standard Mode Erase Suspend Mode Status Embedded Program Algorithm Embedded Erase Algorithm Erase Erase-Suspend- Suspended Sector Read Non-Erase Suspended Sector Erase-Suspend-Program Write Operation Status DQ7 (Note 2) DQ7# 0 DQ6 Toggle Toggle DQ5 (Note 1) 0 0 DQ3 N/A 1 DQ2 (Note 2) No toggle Toggle RY/BY# 0 0 1 No toggle 0 N/A Toggle 1 Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. February 16, 2006 Am29LV065D 33 ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C 20 ns Ambient Temperature with Power Applied. . . . . . . . . . . . . . –65°C to +125°C +0.8 V Voltage with Respect to Ground –0.5 V VCC (Note 1) . . . . . . . . . . . . . . . . . –0.5 V to +4.0 V VIO . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +5.5 V –2.0 V A9, OE#, ACC, and RESET# (Note 2) . . . . . . . . . . . . . . . . . . . . –0.5 V to +12.5 V 20 ns Figure 8. Maximum Negative Overshoot Waveform All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot V SS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 8. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 9. 2. Minimum DC input voltage on pins A9, OE#, ACC, and RESET# is –0.5 V. During voltage transitions, A9, OE#, ACC, and RESET# may overshoot V SS to –2.0 V for periods of up to 20 ns. See Figure 8. Maximum DC input voltage on pin A9, OE#, ACC, and RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. 20 ns 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns Figure 9. Maximum Positive Overshoot Waveform 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. OPERATING RANGES Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C Extended (E) Devices Ambient Temperature (TA) . . . . . . . . –55°C to +125°C Supply Voltages VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0–3.6 V VIO . . . . . . . . . . . . . . . . .either 1.8–2.9 V or 3.0–5.0 V (see Ordering Information section) Operating ranges define those limits between which the functionality of the device is guaranteed. 34 Am29LV065D February 16, 2006 DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description Test Conditions Min ILI Input Load Current VIN = VSS to VCC, VCC = VCC max ILIT A9, ACC Input Load Current VCC = VCC max; A9 = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max ICC1 VCC Active Read Current (Notes 1, 2) CE# = VIL, OE# = VIH ICC2 VCC Active Write Current (Notes 2, 3) CE# = VIL, OE# = VIH ICC3 VCC Standby Current (Note 2) ICC4 Typ Max Unit ±1.0 µA 35 µA ±1.0 µA 5 MHz 9 16 1 MHz 2 4 26 30 mA CE#, RESET# = VCC ± 0.3 V 0.2 5 µA VCC Reset Current (Note 2) RESET# = VSS ± 0.3 V 0.2 5 µA ICC5 Automatic Sleep Mode (Notes 2, 4) VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V 0.2 5 µA VIL Input Low Voltage (Note 5) –0.5 0.8 V VIH Input High Voltage (Note 5) 0.7 x VCC VCC + 0.3 V VHH Voltage for ACC Program Acceleration VCC = 3.0 V ± 10% 11.5 12.5 V VID Voltage for Autoselect and Temporary VCC = 3.0 V ± 10% Sector Unprotect 8.5 12.5 V VOL Output Low Voltage 0.45 V VOH1 VOH2 VLKO Output High Voltage IOL = 4.0 mA, VCC = VCC min mA IOH = –2.0 mA, VCC = VCC min 0.8 VIO V IOH = –100 µA, VCC = VCC min VIO–0.4 V Low VCC Lock-Out Voltage (Note 6) 2.3 2.5 V Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 5. If VIO < VCC, maximum VIL for CE# and DQ I/Os is 0.3 VIO. If VIO < VCC, minimum VIH for CE# and DQ I/Os is 0.7 VIO. If VIO > VCC, maximum VIL for CE# and DQ VOS is 0.8 V; minimum VIH for CE# and DQ I/Os is 0.7 V10-. Maximum VIH for these connections is VIO + 0.3 V. 6. Not 100% tested. February 16, 2006 Am29LV065D 35 DC CHARACTERISTICS Zero-Power Flash Supply Current in mA 25 20 15 10 5 0 0 500 1000 1500 Note: Addresses are switching at 1 MHz Figure 10. 2000 2500 3000 3500 4000 Time in ns ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 12 3.6 V 10 Supply Current in mA 8 3.0 V 6 4 2 0 1 2 3 5 Frequency in MHz Note: T = 25 °C Figure 11. 36 4 Typical ICC1 vs. Frequency Am29LV065D February 16, 2006 TEST CONDITIONS Table 12. Test Specifications 3.3 V 90R, 101R Test Condition 2.7 kΩ Device Under Test Output Load 6.2 kΩ 30 Test Setup pF 5 ns 0.0–3.0 V Input timing measurement reference levels (See Note) 1.5 V Output timing measurement reference levels 0.5 VIO V Input Pulse Levels Figure 12. 100 Input Rise and Fall Times Note: Diodes are IN3064 or equivalent Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) CL 120R, 121R Note: If VIO < VCC, the reference level is 0.5 VIO. 3.0 V Input 1.5 V 0.5 VIO V Measurement Level Output 0.0 V Note: If VIO < VCC, the input measurement reference level is 0.5 VIO. Figure 13. Input Waveforms and Measurement Levels KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS OUTPUTS Steady Changing from H to L Changing from L to H February 16, 2006 Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) Am29LV065D 37 AC CHARACTERISTICS Read-Only Operations Parameter Speed Options Test Setup (Note 1) 90R 101R 120R, 121R Unit Min 90 100 120 ns CE#, OE# = VIL Max 90 100 120 ns OE# = VIL Max 90 100 120 ns Output Enable to Output Delay Max 35 35 50 ns tDF Chip Enable to Output High Z (Note 2) Max 30 30 30 ns tGHQZ tDF Output Enable to Output High Z (Note 2) Max 30 30 30 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns Min 0 ns tOEH Read Output Enable Hold Time (Note 2) Toggle and Data# Polling Min 10 ns JEDEC Std. Description tAVAV tRC Read Cycle Time (Note 2) tAVQV tACC Address to Output Delay tELQV tCE Chip Enable to Output Delay tGLQV tOE tEHQZ Notes: 1. All test setups assume VIO = VCC. 2. Not 100% tested. 3. See Figure 12 and Table 12 for test specifications. tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V Figure 14. 38 Read Operation Timings Am29LV065D February 16, 2006 AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) Max 20 µs tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 µs tRB RY/BY# Recovery Time Min 0 ns Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Figure 15. February 16, 2006 Reset Timings Am29LV065D 39 AC CHARACTERISTICS Erase and Program Operations Parameter Speed Options 90R 101R 120R, 121R Unit 90 100 120 ns JEDEC Std. Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tAH Address Hold Time Min tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min tDVWH tDS Data Setup Time Min tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHDL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ 5 µs tWHWH1 tWHWH1 Accelerated Byte Programming Operation (Note 2) Typ 4 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.9 sec tVHH VHH Rise and Fall Time (Note 1) Min 250 ns tVCS VCC Setup Time (Note 1) Min 50 µs tRB Write Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Max 90 ns tWLAX tBUSY 45 45 50 0 45 35 45 35 ns ns 50 50 ns ns Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 40 Am29LV065D February 16, 2006 AC CHARACTERISTICS Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) XXXh PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH PD A0h Data Status tBUSY DOUT tRB RY/BY# VCC tVCS Note: PA = program address, PD = program data, DOUT is the true data at the program address. Figure 16. Program Operation Timings VHH ACC VIL or VIH VIL or VIH tVHH Figure 17. February 16, 2006 tVHH Accelerated Program Timing Diagram Am29LV065D 41 AC CHARACTERISTICS Erase Command Sequence (last two cycles) tAS tWC XXXh Addresses Read Status Data VA SA VA XXXh for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Note: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”. Figure 18. 42 Chip/Sector Erase Operation Timings Am29LV065D February 16, 2006 AC CHARACTERISTICS tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ0–DQ6 Status Data Status Data True Valid Data High Z True Valid Data tBUSY RY/BY# Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 19. February 16, 2006 Data# Polling Timings (During Embedded Algorithms) Am29LV065D 43 AC CHARACTERISTICS tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 tOE Valid Data Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data RY/BY# Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle Figure 20. Enter Embedded Erasing WE# Erase Suspend Erase Toggle Bit Timings (During Embedded Algorithms) Enter Erase Suspend Program Erase Suspend Read Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. Figure 21. 44 DQ2 vs. DQ6 Am29LV065D February 16, 2006 AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std Description All Speed Options Unit tVIDR VID Rise and Fall Time (See Note) Min 500 ns tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 µs tRRB RESET# Hold Time from RY/BY# High for Temporary Sector Group Unprotect Min 4 µs Note: Not 100% tested. VID RESET# VID VSS, VIL, or VIH VSS, VIL, or VIH tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRRB tRSP RY/BY# Figure 22. February 16, 2006 Temporary Sector Group Unprotect Timing Diagram Am29LV065D 45 AC CHARACTERISTICS VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Group Protect or Unprotect Data 60h 60h Valid* Verify 40h Status Sector Group Protect: 150 µs, Sector Group Unprotect: 15 ms 1 µs CE# WE# OE# * For sector group protect, A6 = 0, A1 = 1, A0 = 0. For sector group unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 23. 46 Sector Group Protect and Unprotect Timing Diagram Am29LV065D February 16, 2006 AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Parameter Speed Options JEDEC Std Description 90R 101R 120R Unit tAVAV tWC Write Cycle Time (Note 1) Min 90 100 120 ns tAVWL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 50 ns tDVEH tDS Data Setup Time Min 45 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min tEHEL tCPH CE# Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ 11 µs tWHWH1 tWHWH1 Accelerated Byte Programming Operation (Note 2) Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.9 sec 0 45 45 ns 50 ns Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. February 16, 2006 Am29LV065D 47 AC CHARACTERISTICS XXX for program XXX for erase PA for program SA for sector erase XXX for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. Figure 24. 48 Alternate CE# Controlled Write (Erase/Program) Operation Timings Am29LV065D February 16, 2006 ERASE AND PROGRAMMING PERFORMANCE Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.9 15 sec Chip Erase Time 115 Excludes 00h programming prior to erasure (Note 4) sec Byte Program Time 5 150 µs Accelerated Byte Program Time 4 120 µs Chip Program Time (Note 3) 42 126 sec Excludes system level overhead (Note 5) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 3.0 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Description Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V –100 mA +100 mA VCC Current Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP PIN CAPACITANCE Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Test Conditions Min Unit 150°C 10 Years 125°C 20 Years Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Description Minimum Pattern Data Retention Time February 16, 2006 Am29LV065D 49 PHYSICAL DIMENSIONS TS 048—48-Pin Standard Pinout Thin Small Outline Package (TSOP) Dwg rev AA; 10/99 50 Am29LV065D February 16, 2006 PHYSICAL DIMENSIONS FBE063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 11 x 12 mm package Dwg rev AF; 10/99 February 16, 2006 Am29LV065D 51 REVISION SUMMARY Revision A (July 27, 2000) Revision B (January 10, 2002) Initial release. Global Revision A+1 (August 4, 2000) Added TSR048 package. Clarified description of VersatileIO (V IO ) in the following sections: Distinctive Characteristics; General Description; VersatileIO (VIO) Control; Operating Ranges; DC Characteristics; CMOS compatible. Global Deleted references to the 48-pin reverse TSOP. Connection Diagrams Reduced typical sector erase time from 1.6 s to 0.9 s. Corrected pin 36 on TSOP package to VIO. Accelerated Program Operation, Unlock Bypass Command Sequence Table 3, Am29LV065D Autoselect Codes, (High Voltage Method) Modified caution note regarding ACC input. Corrected the autoselect code for sector protection verification. Revision A+2 (August 14, 2000) Sector Group Protection and Unprotection Ordering Information Deleted reference to previous method of sector protection and unprotection. Corrected 90 ns entry in VIO column for FBGA. Autoselect Command Sequence Revision A+3 (August 25, 2000) Clarified description of function. Table 3, Am29LV065D Autoselect Codes, (High Voltage Method) SecSi (Secured Silicon) Sector Flash Memory Region Corrected the SecSI Sector Indicator Bit codes from 80h/00h to 90h/10h. Clarified the customer lockable version of this device can be programmed and protected only once. In Table 5, changed address range in second row. Revision A+4 (October 19, 2000) DC Characteristics Global Changed data sheet status to “Preliminary.” Changed minimum VOH1 from 0.85VIO to 0.8V IO. Deleted reference to Note 6 for both VOH1 and VOH2. Revision A+5 (November 7, 2000) Erase and Program Operations table Ordering Information Corrected to indicate tBUSY specification is a maximum value. Deleted burn-in option. Erase and Program Performance table Revision A+6 (November 27, 2000) Changed typical sector erase time from 1.6 s to 0.9 s and typical chip erase time from 205 s to 115 s. Pin Description, and Table 11, Write Operation Status Revision C (March 26, 2004) Deleted references to RY/BY# being available only on the FBGA package. RY/BY# is also available on the TSOP package. SecSi (Secured Silicon) Sector Flash Memory Region Revision A+7 (March 8, 2001) Modified SecSi Sector protect verify section. Added algorithm shown in Figure 3. Global Common Flash Memory Interface Deleted “Preliminary” status from document. Modified website for CFI specifications and publications. Table 4, Sector Group Protection/Unprotection Address Table Command Definitions Corrected the sector group address bits for sectors 64–127. 52 Modified end of first paragraph to “Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is required to return the device to reading array data.” Am29LV065D February 16, 2006 Byte Program Command Sequence, Chip Erase Command Sequence, Erase Suspend/Erase Resume Commands Command Definitions Modified Erase Suspend & Erase Resume to XXX. See Table 10. Added - The Secsi Sector, autoselect, and CFI functions are not available when a program function is in progress. Revision C+1 (June 10, 2004) DC Characteristics - CMOS Compatible Added Pb-free package OPNs. Removed IACC . Added Note. Ordering Information Revision C2 (February 16, 2006) Trademarks Global Updated. Removed Reverse TSOP. Trademarks Copyright © 2004-2006 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. February 16, 2006 Am29LV065D 53 54 Am29LV065D February 16, 2006