ICs for Mobile Communication AN6095SH Reception IF + transmission quadrature modulation IC for PHS and cellular telephone Unit: mm 24 12 13 6.5±0.3 1 • Operating supply voltage range: 2.7 V to 4.0 V • Current consumption Transmission block: 28 mA Reception block: 5.3 mA Sleep mode: 10 µA or less (Transmission block) • Output level: −8 dBm • Output frequency: up to 2 GHz • Transmission IF frequency: 100 MHz to 300 MHz (Reception block) • RSSI input D range: 80 dB • Mixer conversion gain: 16 dB • Limiter voltage gain: 70 dB • 2nd down-mixer NF: 6 dB 0.15 +0.1 -0.05 (0.5) 5.5±0.3 7.5±0.3 0.65±0.1 ■ Features 1.5±0.2 0.1±0.1 0.65±0.1 0.2±0.1 The AN6095SH is a single chip IC for PHS reception IF block and transmission block. Reception IF block is incorporating a 2nd down-mixer and a limiter/RSSI circuit which can operate for up to 300 MHz of input frequency. Transmission block is incorporating a quadrature modulator, a phase shifter, an up-mixer for 1.9 GHz and output level control functions. It contributes to realization of small package and small size of equipment. 0.5 ■ Overview SSOP024-P-0300A Note) The package of this product will be changed to lead-free type (SSOP024-P-0300D). See the new package dimensions section later of this datasheet. ■ Applications • PHS Io 13 14 15 16 17 18 19 20 21 22 23 24 ■ Block Diagram Io φ Σ RSSI Publication date: December 2001 SDM00003BEB 12 11 10 9 8 7 6 5 Io 4 3 2 1 Io 1 AN6095SH ■ Pin Descriptions Pin No. Symbol Description Pin No. Symbol Description 1 RXMXIN RX-mixer-in 13 Q-IN Q-input 2 RXLOIN RX-local-in 14 Q-IN Q-input 3 VCCM VCC-mixer 15 I-IN I-input 4 MXO Mixer-out 16 I-IN I-input 5 LMDEC1 Limiter-decouple 1 17 GNDM GND-TX-modulator 6 LMIN Limiter-in 18 APC/BS APC/BS 7 LMDEC2 Limiter-decouple 2 19 VCCM VCC -TX-modulator 8 GNDR GND-RX 20 TXLO2R TX-local 2-REF 9 VCCL VCC -limiter 21 TXLO2 TX-local 2 10 LMO Limiter-out 22 VCCO VCC -TX-out 11 TXLO1 TX-local 1-in 23 GNDO GND-TX-out 12 RSO RSSI-out 24 TXO TX-output ■ Absolute Maximum Ratings Parameter Symbol Rating Unit Supply voltage VCC 4.2 V Supply current ICC 60 mA Power dissipation PD 252 mW Operating ambient temperature * Topr −20 to +60 °C Storage temperature * Tstg −55 to +125 °C Note) 1. *: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C. 2. For the main characteristics, refer to "■ Technical Data". ■ Recommended Operating Range Parameter Supply voltage 2 Symbol Range Unit VCC 2.7 to 4.0 V SDM00003BEB AN6095SH ■ Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Current consumption (reception) ICCRX No signal 5.3 6.8 mA Mixer conversion gain GMX VMI = 70 dBµ Except for filter loss, SW1 = a 13 16 19 dB Mixer maximum output level VMX VMI = 105 dBµ Except for filter loss, SW1 = a 105 110 dBµ Limiter voltage gain GLM VLI = 20 dBµ, SW1 = b 63 68 73 dB Limiter maximum output amplitude VLM VLI = 80 dBµ, SW1 = b 300 360 mV[p-p] RSSI output voltage 1 VS(1) No signal, SW1 = b 0 0.2 0.5 V RSSI output voltage 2 VS(2) VLI = 115 dBµ, SW1 = b 1.60 1.80 V VS (VIS) = VS(1) + 0.15 V DS(1) = VS (VIS + 65 dBµ) − VS (VIS) SW1 = b 1.0 1.25 1.5 V 0.75 1.0 1.25 RSSI output slope DS RSSI output slope variation ∆DS(n) ∆DS(n) = 5 {VS (VIS + n13 dBµ) − VS (VIS + (n−1) 13 dBµ)} /DS(1) n = 1 to 5, SW1 = b Current consumption (transmission) ICCTX Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm VAPC = 2.75 V 28 37 mA Sleep current at transmission ISL No signal, VAPC = 0 V 0 10 µA Transmission output level 1 PO1 Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 660 MHz, −10 dBm VAPC = 2.75 V −12 −8 dBm Transmission output level 2 PO2 Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 685 MHz, −10 dBm VAPC = 2.75 V −12 −8 dBm Note) 1. Refer to the "• Test circuit" for the SW1. 2. Unless otherwise specified : At reception, VCC2 = 3.0 V, VLO3 = −10 dBm: f = 233.15 MHz, VMI: f = 243.95 MHz, SW1 = a VLI: f = 10.8 MHz (Input level of pin 6 except for attenuation of the matching circuit and filter.) VMO and VLO are in high impedance measurement. (VLM is measured with probe load of 27 pF and 1 MΩ.) VIS is an input level VLI at which RSSI output voltage becomes VS(1) + 0.15 V. At transmission, VCC1 = 3.0 V, IQ signal amplitude: 0.4 V (both phases), DC bias: 1.5 V, SW1 = a ICCTX: π/4 QPSK-modulated, PO1 and PO2: PN9 stages modulated wave Output frequency of PO1: 1 893.174 MHz Output frequency of PO2: 1 918.174 MHz SDM00003BEB 3 AN6095SH ■ Electrical Characteristics at Ta = 25°C (continued) • Design reference data Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Symbol Conditions Min Typ Max Unit 1st local leak suppression amount CL1 Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm VAPC = 2.75 V −25 dBc 2nd local leak suppression amount CL2 Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm VAPC = 2.75 V −15 dBc In-band output level deviation ∆P Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 660 to 1 685 MHz, −10 dBm VAPC = 2.75 V ±1.6 dB Adjacent channel leak power suppression (600 kHz detuning) BL1 Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm VAPC = 2.75 V −65 −60 dBc Modulation precision EVM Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm VAPC = 2.75 V 3 5 %[rms] Minimum output level Pmin Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm VAPC = 1.0 V −45 −40 dBm Image leak suppression IL1 Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm −35 dBc −35 dBc −55 −51 dBc VAPC = 2.75 V IQ: Level is of no adjustment fLO1 + fLO2 local leak suppression amount CL Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm VAPC = 2.75 V IQ: DC offset is of no adjustment Proximity spurious suppression DU Lo1 = 233.15 MHz, −10 dBm Lo2 = 1 672.5 MHz, −10 dBm Adjust VAPC so as to get PO = −12 dBm Note) Unless otherwise specified: At transmission, VCC1 = 3.0 V, SW1 = a IQ signal: 0.4 V[p-p] (both phases), DC bias: 1.5 V CL1, CL2, ∆P, BL1, EVM, Pmin , DU: PN9 stages modulated wave IL1, CL: π/4 QPSK-modulated 4 SDM00003BEB AN6095SH ■ Electrical Characteristics (continued) Q 1 000 pF I 100 pF VAPC /BS 5 µF I 1 000 pF Q VCC1 • Test circuit 560 Ω Lo 2 100 pF 1 000 pF PO 100 pF 1 kΩ 1 kΩ 1 kΩ 1 kΩ 100 pF 100 pF 100 pF 100 pF 4 700 pF 560 Ω 47 Ω Io 13 14 15 16 17 18 19 20 21 22 23 24 2 200 pF Io φ Σ RSSI 1 000 pF 12 10 9 8 7 11 47 Ω 22 nF 560 pF 330 Ω 10.8 MHz filter 47 Ω 5 µF SDM00003BEB Vs 1 000 pF 22 nF VLM a Lo 1 100 pF VCC2 2 200 pF 2 200 pF VMO 47 Ω 6 5 4 2 200 pF 100 pF SW 1 b VLI 47 Ω Io 100 pF Lo 3 VMI 100 pF 3 2 1 Io 5 AN6095SH ■ Technical Data Unless otherwise specified, the test condition is the same as "■ Electrical Characteristics". Characteristics are the theoretical values and not guaranteed ones. IM/mixer output Mixer input 0 130 −10 120 110 −20 IM/mixer output level (dBµ) Transmission output spurious level (dBm) • Main characteristics (application circuit) Wide band spurious characteristic −30 −40 −50 −60 −70 −80 100 Mixer output 90 80 IM output 70 60 50 40 30 20 −90 10 −100 0 0 6G 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Frequency (Hz) Mixer input level (dBµ) Mixer CG, NF characteristics Local input Limiter input/output characteristic 20 120 18 110 Limiter output level (dBµ) CG 16 Mixer CG (dB) NF (dB) 14 12 10 8 6 NF 100 90 80 70 4 60 2 0 −20 −18 −16 −14 −12 −10 −8 −6 −4 −2 50 −10 0 0 Local input level (dBm) 10 20 30 40 50 60 70 80 90 100 110 120 Mixer input level (dBµ) RSSI characteristic Mixer inpit/output characteristics 120 1.8 110 1.6 100 Mixer output level (dBµ) RSSI output level (V) 1.4 1.2 1.0 0.8 0.6 0.4 Ta = 25°C, 60°C 90 80 Ta = −20°C 70 60 50 40 30 20 0.2 0.0 −10 0 10 0 0 10 20 30 40 50 60 70 80 90 100 110 6 10 20 30 40 50 60 70 80 90 100 110 120 130 Mixer input level (dBµ) Mixer input level (dBµ) SDM00003BEB AN6095SH ■ Technical Data (continued) • Main characteristics (application circuit) (continued) Limiter characteristics RSSI characteristics 2.2 110 Ta = 60°C 2.0 100 Ta = −20°C 1.8 Ta = 25°C 1.6 RSSI output level (V) 90 80 70 60 50 40 1.4 Ta = −20°C 1.2 Ta = 25°C Ta = 60°C 1.0 0.8 30 0.6 20 0.4 10 0.2 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 0 10 20 30 40 50 60 70 80 90 100 110 120 Limiter input level (dBµ) Limiter input level (dBµ) APC control voltage characteristics 0 20 −10 Output level −20 Ta = 60°C 15 −30 −40 Ta = 25°C 8fLO1 Ta = −20°C −50 Ta = −20°C −60 Ta = −20°C ACP 600 kHz −70 60°C 25°C 60°C 10 EVM (%[rms]) 0 Output level (dBm) 8fLO1 , adjacent channel leak (600 kHz) (dBc) Limiter output level (dBµ) 120 25°C 5 −80 Ta = −20°C EVM −90 60°C 25°C −100 0 0 1 2 3 APC control voltage (V) VCC = 3.0 V Lo1: 233.15 MHz, −10 dBm Lo2: 1 672.5 MHz, −10 dBm IQ: 0.4 V[p-p] (double phase), 1.5 VDC , using PN9 stages continuous wave SDM00003BEB 7 AN6095SH Q 1 000 pF I 100 pF VAPC /BS 5 µF I 1 000 pF Q VCC1 ■ Application Circuit Example Lo 2 560 Ω 470 pF PO 1 pF 100 pF 100 pF 560 Ω 47 Ω 1.8 nH 1 kΩ 1 kΩ 1 kΩ 1 kΩ 100 pF 100 pF 100 pF 100 pF 4 700 pF IO 13 14 15 16 17 18 19 20 21 22 23 24 2 200 pF IO φ Σ RSSI 100 pF 2 200 pF 2 200 pF 8 10.8 MHz filter 1 000 pF 4 270 Ω 22 nF SDM00003BEB 5 µF VCC2 12 560 pF Vs Lo 1 VLM Lo 3 1 000 pF 22 nF VMO VMI 47 Ω At CG/NF measurement, set pin 4 output as the right figure. 47 Ω 100 pF 47 nH 4 pF 1 pF 11 22 nF 1 000 pF 100 pF 120 nH 10 9 8 7 6 5 IO 4 3 2 1 IO AN6095SH ■ New Package Dimensions (Unit: mm) • SSOP024-P-0300D (Lead-free package) 6.50±0.30 24 13 +0.10 0.15-0.05 5.50±0.30 7.50±0.30 (1.00) 0° to 10° (0.50) 0.50 Seating plane 12 0.20+0.10 -0.05 0.10±0.10 1 1.50±0.20 (0.50) SDM00003BEB Seating plane 9 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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