PANASONIC AN1201SM

ICs for Telephone
AN1201SM
Polarity inverting charge pump DC/DC converter IC
■ Overview
Unit: mm
AN1201SM is a negative voltage generation IC for
bias voltage of transmission power module of cellular
phones. This IC is a polarity inverting DC/DC converter
to change from positive voltage into negative voltage.
0.225±0.05
2
3
4
0.8±0.10
0.20±0.05
5
0.15±0.05
0.65±0.05 0.65±0.05
1
2.00±0.10
• High power conversion efficiency: 89% typ. (when output
current is 5 mA.)
• Low output resistance: 20 Ω typ.
• High voltage conversion efficiency: 99.9%
• Small (S-MINI) package
1.65±0.10
0.225±0.05
1.30±0.10
■ Features
2.10±0.10
0 to 0.10
■ Applications
• Cellular phones
SMINI-5D
Note) The package of this product will be changed
to lead-free type (SMINI-5DA). See the new
package dimensions section later of this
datasheet.
• Marking
■ Block Diagram
C2
GND
5
S2
Part No.: "AL" indicates AN1201SM.
4
A L
OSC
S1
S3
Pin No.1 displayed
1
2
VIN
VOUT
Publication date: November 2001
S4
3
C1
SDE00001BEB
1
AN1201SM
■ Pin Descriptions
Pin No.
Symbol
Description
1
VIN
Supply voltage pin
2
VOUT
Inverted output pin
3
C1
4
GND
5
C2
Charge pump capacitor's positive polarity side connecting pin
Ground pin
Charge pump capacitor's negative polarity side connecting pin
■ Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply voltage
VIN
3.3
V
Supply current
IIN
10
mA
IO
20
mA
PD
48
mW
Topr
−30 to +85
°C
Tstg
−55 to +125
°C
Output current
Power dissipation
*2
Operating ambient temperature
Storage temperature
*1
*2
Note) 1. Do not apply external currents or voltages to any pins not specifically mentioned.
For circuit currents, (+) denotes current flowing into the IC, and (−) denotes current flowing out of the IC.
2. *1: Except for the power dissipation, operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
*2: Ta = 85°C, For the independent IC without a heat sink.
■ Recommended Operating Range
Parameter
Supply voltage
Symbol
Range
Unit
VIN
2.0 to 3.0
V
■ Electrical Characteristics at VIN = 2.5 V, C1 = 1 µF, Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Consumption current
ICC
No load

0.25
1
mA
Oscillator frequency
fOSC
No load
90
125
160
kHz
Output resistance
ROUT
Load 500 Ω


50
Ω
95.0
99.9

%
Voltage conversion efficiency
Vη
No load
Power efficiency
Pη
Load 500 Ω
80
89

%
VIN = 0.2 V, no load


1
µA
Consumption current in Sleep mode
IOFF
• Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
Unless otherwise specified: VIN = 2.5 V, Ta = 25°C
Parameter
Oscillator frequency
2
Symbol
fOSC
Conditions
VIN = 2.5 V, no load
Ta = −30°C to 85°C
SDE00001BEB
Min
Typ
Max
Unit
66
125
198
kHz
AN1201SM
■ Technical Data
• PD  Ta curves of SMINI-5D
PD  T a
Power dissipation PD (W)
0.200
0.150
Independent IC
without a heat sink
Rth( j-a) = 833.3˚C/W
0.120
0.100
0.050
0.048
0.000
0
25
50
75
85
100
125
Ambient temperature Ta (°C)
■ Application Circuit Example
C2
GND
5
S2
4
1 µF
S1
OSC
1
S4
2
VIN
ICC
2.2 µF
S3
VCC
VOUT
100 µH
1 µF
SDE00001BEB
3
C1
1 µF
Load
500 Ω
3
AN1201SM
■ New Package Dimensions (Unit: mm)
• SMINI-5DA (Lead-free package)
5
4
1
2
3
0.32±0.10 0 to 0.10
0.80±0.10
0.11+0.10
-0.05
0.65 0.65
1.30±0.10
2.00±0.10
0.10
1
5
4
0.13 M
1.65±0.10
0.225
2.10±0.10
0.225
0.22+0.10
-0.05
2
Seating plane
3
4
SDE00001BEB
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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2001 MAR