AP20GT60P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A G C E VCES 600V IC 20A TO-220(P) C ▼ RoHS Compliant & Halogen-Free G E Absolute Maximum Ratings Parameter Rating Units VCES Symbol Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +20 V IC@TC=25oC Collector Current 40 A o IC@TC=100 C Collector Current 20 A ICM Pulsed Collector Current 1 160 A PD@TC=25 C Maximum Power Dissipation 104 W TSTG Storage Temperature Range -55 to 150 o C TJ Operating Junction Temperature Range 150 o C o Notes: 1.Pulse width limited by Max. junction temperature . Thermal Data Symbol Rthj-c Rthj-a Value Parameter Units 1.2 Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient 62 o C/W o C/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES Parameter Gate-to-Emitter Leakage Current ICES Collector-Emitter Leakage Current VCE=600V, VGE=0V - VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=20A - VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=35A - 2 - V VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 2 - 7 V Qg Total Gate Charge IC=20A - 100 160 nC Qge Gate-Emitter Charge VCC=480V - 24 - nC Qgc Gate-Collector Charge - 40 - nC td(on) Turn-on Delay Time - 50 - ns tr Rise Time - 20 - ns td(off) Turn-off Delay Time - 135 - ns tf Fall Time VGE=15V VCE=480V, Ic=20A, VGE=15V, RG=5Ω, Inductive Load - 190 380 ns Eon Turn-On Switching Loss - 0.3 - mJ Eoff Turn-Off Switching Loss - 0.9 - mJ Test Conditions VGE=+20V, VCE=0V Min. - Typ. - Max. +100 Units nA - 25 uA 1.8 2.5 V Cies Input Capacitance VGE=0V - 3400 5440 pF Coes Output Capacitance VCE=30V - 75 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 50 - pF Data and specifications subject to change without notice 1 201106013 AP20GT60P-HF 200 200 160 120 80 120 80 40 40 0 0 0 4 8 12 0 16 4 V CE , Collector-Emitter Voltage (V) 8 12 16 V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 200 4 V GE = 15 V VCE(sat) ,Saturation Voltage(V) V GE =15V 160 IC , Collector Current(A) 20V 18V 15V 12V V GE =10V 160 IC , Collector Current (A) T C =25 C IC , Collector Current (A) T C =150 o C 20V 18V 15V 12V V GE =10V o T C =150 ℃ T C =25 ℃ 120 80 40 3 I C = 40 A I C =20A 2 1 0 0 2 4 6 0 8 40 V CE , Collector-Emitter Voltage (V) 80 120 160 Junction Temperature ( o C) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature f=1.0MHz 1.6 5000 Capacitance (pF) Normalized VGE(th) (V) 4000 1.2 0.8 C ies 3000 2000 - 0.4 1000 0 C oes C res 0 -50 0 50 100 150 Junction Temperature ( o C ) Fig 5. Gate Threshold Voltage 1 5 9 13 17 21 25 29 33 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2 AP20GT60P-HF 1 Normalized Thermal Response (R thjc) 160 Power Dissipation (W) 120 80 40 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0 0 50 100 150 0.00001 200 0.0001 0.001 o Junction Temperature ( C ) 1 10 Fig 8. Effective Transient Thermal Impedance 20 20 T C =25 o C T C = 150 o C VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) 0.1 t , Pulse Width (s) Fig7. Power Dissipation vs. Junction Temperature 15 10 5 I C = 60 A 40 A 20 A 0 15 10 I C = 60 A 40 A 20 A 5 0 0 4 8 12 16 20 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V) Fig 9. Saturation Voltage vs. VGE Fig 10. Saturation Voltage vs. VGE 1000 16 V GE =15V I C =20A V CC =480V o T C =125 C IC, Peak Collector Current(A) VGE , Gate -Emitter Voltage (V) 0.01 12 8 4 100 10 Safe Operating Area 1 0 0 40 80 120 Q G , Gate Charge (nC) Fig 11. Gate Charge Characterisitics 160 0.1 1 10 100 1000 10000 V CE , Collector-Emitter Voltage(V) Fig 12. Turn-off SOA 3