Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE General Description Features The AP2111 is CMOS process low dropout linear regulator with enable function, the regulator delivers a guaranteed 600mA (Min) continuous load current. • • • • • The AP2111 provides 1.2V 1.8V, 2.5V, 3.3V and 4.8V regulated output, and provides excellent output accuracy 1.5%, it is also provides a excellent load regulation, line regulation and excellent load transient performance due to very fast loop response. The AP2111 has built-in auto discharge function. • • • • • • • • The AP2111 features low power consumption. The AP2111 is available in SOIC-8, PSOP-8 and SOT-223 packages. • • AP2111 Output Voltage Accuracy: ±1.5% Output Current: 600mA (Min) Foldback Short Current Protection: 50mA Enable Function to Turn On/Off VOUT Low Dropout Voltage (3.3V): 250mV (Typ) @ IOUT=600mA Excellent Load Regulation: 0.2%/A (Typ) Excellent Line Regulation: 0.02%/V (Typ) Low Quiescent Current: 55µA (Typ) Low Standby Current: 0.01µA (Typ) Low Output Noise: 50µVRMS PSRR: 65dB @ f=1kHz, 65dB @ f=100Hz OTSD Protection Stable with 1.0µF Flexible Cap: Ceramic, Tantalum and Aluminum Electrolytic Operating Temperature Range: -40°C to 85°C ESD: MM 400V, HBM 4000V Applications • • • SOIC-8 Laptop computer Potable DVD LCD Monitor PSOP-8 SOT-223 Figure 1. Package Types of AP2111 Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 1 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Pin Configuration M Package MP Package (SOIC-8) (PSOP-8) H Package (SOT-223) Figure 2. Pin Configuration of AP2111 (Top View) Pin Descriptions Pin Number SOIC-8/PSOP-8 SOT-223 4 3 VIN 2 2 VOUT 8 1, 3, 5, 6, 7 Jan. 2011 Pin Name Function Input voltage Output voltage EN 1 Chip enable, H – normal work, L – shutdown output GND Ground Rev. 1. 4 BCD Semiconductor Manufacturing Limited 2 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Functional Block Diagram EN 8 4 (3) UVLO & Shutdown Logic VIN Foldback Current Limit Thermal Shutdown 2 (2) VOUT 3m VREF GND 1, 3, 5, 6, 7 (1) A (B) A: SOIC-8/PSOP-8 B: SOT-223 Figure 3. Functional Block Diagram of AP2111 Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 3 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Ordering Information AP2111 - Circuit Type G1: Green Blank: Tube TR: Tape & Reel Package M: SOIC-8 MP: PSOP-8 H: SOT-223 Package SOIC-8 PSOP-8 SOT-223 Temperature Range -40 to 85°C -40 to 85°C -40 to 85°C 1.2: Fixed Output 1.2V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 3.3: Fixed Output 3.3V 4.8: Fixed Output 4.8V Part Number Marking ID Packing Type AP2111M-1.2G1 2111M-1.2G1 Tube AP2111M-1.2TRG1 2111M-1.2G1 Tape & Reel AP2111M-1.8G1 2111M-1.8G1 Tube AP2111M-1.8TRG1 2111M-1.8G1 Tape & Reel AP2111M-2.5G1 2111M-2.5G1 Tube AP2111M-2.5TRG1 2111M-2.5G1 Tape & Reel AP2111M-3.3G1 2111M-3.3G1 Tube AP2111M-3.3TRG1 2111M-3.3G1 Tape & Reel AP2111MP-1.2G1 2111MP-1.2G1 Tube AP2111MP-1.2TRG1 2111MP-1.2G1 Tape & Reel AP2111MP-1.8G1 2111MP-1.8G1 Tube AP2111MP-1.8TRG1 2111MP-1.8G1 Tape & Reel AP2111MP-2.5G1 2111MP-2.5G1 Tube AP2111MP-2.5TRG1 2111MP-2.5G1 Tape & Reel AP2111MP-3.3G1 2111MP-3.3G1 Tube AP2111MP-3.3TRG1 2111MP-3.3G1 Tape & Reel AP2111H-1.2TRG1 GH11B Tape & Reel AP2111H-1.8TRG1 GH11G Tape & Reel AP2111H-2.5TRG1 GH11H Tape & Reel AP2111H-3.3TRG1 GH11C Tape & Reel AP2111H-4.8TRG1 GH13D Tape & Reel BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 4 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit VIN 6.5 V Power Supply Voltage Operating Junction Temperature Range Storage Temperature Range TJ 150 ºC TSTG -65 to 150 ºC Lead Temperature (Soldering, 10sec) TLEAD 260 ºC Thermal Resistance (No Heatsink) θJA SOIC-8 144 PSOP-8 143 SOT-223 128 ºC/W ESD (Machine Model) 400 V ESD (Human Body Model) 4000 V Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Operating Ambient Range Jan. 2011 Temperature Symbol Min VIN TA Rev. 1. 4 Typ Max Unit 2.5 6.0 V -40 85 °C BCD Semiconductor Manufacturing Limited 5 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics AP2111-1.2 Electrical Characteristic (Note 2) VIN=2.5V, CIN=1.0µF (Ceramic), COUT=1.0µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Load Regulation Line Regulation Dropout Voltage Quiescent Current Symbol VOUT IOUT(Max) (△VOUT/VOUT) △IOUT (△VOUT/VOUT) △VIN VDROP IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient (△VOUT/VOUT) △T Test Conditions VIN =2.5V, 1mA ≤ IOUT ≤ 30mA VIN=2.5V, VOUT=1.182V to 1.218V Min Typ Max Unit VOUT ×98.5% 1.2 VOUT ×101.5% V 600 mA VIN=2.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A 2.5V≤VIN≤6V, IOUT=30mA 0.02 %/V IOUT =10mA 1000 1300 IOUT =300mA 1000 1300 IOUT=600mA 1000 1300 55 80 µA 0.01 1.0 µA VIN=2.5V, IOUT=0mA VIN=2.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=2.5V, IOUT=100mA f=100Hz 65 f=1kHz 65 IOUT=30mA TA=-40°C to 85°C mV dB ±100 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time EN Pull Down Resistor VOUT Discharge Resistor Thermal Shutdown Temperature Thermal Shutdown Hysteresis Thermal Resistance (Junction to Case) tS No Load RPD RDCHG Set EN pin at Low 20 µs 3.0 mΩ 60 Ω TOTSD 160 THYOTSD 30 θJC V °C SOIC-8 74.6 PSOP-8 43.7 SOT-223 50.9 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 6 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-1.8 Electrical Characteristic (Note 2) VIN=2.8V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Test Conditions Min Typ Max Unit VOUT VIN =2.8V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 1.8 VOUT ×101.5% V IOUT(Max) (△VOUT/VOUT) △IOUT (△VOUT/VOUT) △VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (△VOUT/VOUT) △T VIN=2.8V, VOUT=1.773V to 1.827V VOUT=1.8V, VIN=VOUT+1V, 1mA ≤ IOUT ≤600mA 600 mA 0.2 %/A 2.8V≤VIN≤6V, IOUT=30mA 0.02 %/V IOUT =10mA 500 700 IOUT =300mA 500 700 IOUT=600mA 500 700 VIN=2.8V, IOUT=0mA 55 80 µA 0.01 1.0 µA VIN=2.8V, VEN in OFF mode Ripple 0.5Vp-p VIN=2.8V, IOUT=100mA f=100Hz 65 f=1kHz 65 mV dB IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time tS EN Pull Down Resistor VOUT Discharge Resistor Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load RPD RDCHG Set EN pin at Low 20 µs 3.0 mΩ 60 Ω TOTSD 160 THYOTSD 30 θJC V °C SOIC-8 PSOP-8 SOT-223 74.6 43.7 50.9 °C /W Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 7 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-2.5 Electrical Characteristic (Note 2) VIN=3.5V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Condition Min Typ Max Unit VOUT VIN =3.5V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 2.5 VOUT ×101.5% V IOUT(Max) (△VOUT/VOUT) △IOUT (△VOUT/VOUT) △VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (△VOUT/VOUT) △T VIN=3.5V, VOUT=2.463V to 2.537V VOUT=2.5V, VIN=VOUT+1V, 1mA ≤ IOUT ≤600mA 600 3.5V≤VIN≤6V, IOUT=30mA mA 0.2 %/A 0.02 %/V IOUT =10mA 5 8 IOUT =300mA 125 200 IOUT=600mA 250 400 VIN=3.5V, IOUT=0mA 55 80 µA 0.01 1.0 µA VIN=3.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=3.5V, IOUT=100mA f=100Hz 65 f=1kHz 65 mV dB IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time tS EN Pull Down Resistor VOUT Discharge Resistor Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load RPD RDCHG Set EN pin at Low 20 µs 3.0 mΩ 60 Ω TOTSD 160 THYOTSD 30 θJC V °C SOIC-8 PSOP-8 SOT-223 74.6 43.7 50.9 °C /W Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 8 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-3.3 Electrical Characteristic (Note 2) VIN=4.3V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Symbol Condition Min Typ Max Unit VOUT VIN =4.3V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 3.3 VOUT ×101.5% V IOUT(Max) (△VOUT/VOUT) △IOUT (△VOUT/VOUT) △VIN Load Regulation Line Regulation Dropout Voltage VDROP Quiescent Current Standby Current IQ ISTD Power Supply Rejection Ratio Output Voltage Temperature Coefficient PSRR (△VOUT/VOUT) △T VIN=4.3V, 3.350V VOUT=3.251V to 600 mA VIN=4.3V, 1mA ≤ IOUT ≤600mA 0.2 %/A 4.3V≤VIN≤6V, IOUT=30mA 0.02 %/V IOUT =10mA 5 8 IOUT =300mA 125 200 IOUT=600mA 250 400 VIN=4.3V, IOUT=0mA 55 80 µA 0.01 1.0 µA VIN=4.3V, VEN in OFF mode Ripple 0.5Vp-p VIN=4.3V, IOUT=100mA f=100Hz 65 f=1kHz 65 mV dB IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS VEN High Voltage VIH Enable logic high, regulator on 1.5 6.0 VEN Low Voltage VIL Enable logic low, regulator off 0 0.4 Start-up Time tS EN Pull Down Resistor VOUT Discharge Resistor Thermal Temperature Thermal Hysteresis Shutdown Shutdown Thermal Resistance (Junction to Case) No Load RPD RDCHG Set EN pin at Low 20 µs 3.0 mΩ 60 Ω TOTSD 160 THYOTSD 30 θJC V °C SOIC-8 PSOP-8 74.6 43.7 SOT-223 50.9 °C /W Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 9 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Electrical Characteristics (Continued) AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223) VIN=5.5V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges, unless otherwise specified (Note 3). Parameter Output Voltage Maximum Output Current Load Regulation Line Regulation Dropout Voltage Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Symbol Test Conditions Min Typ Max Unit VOUT VIN =5.5V, 1mA ≤ IOUT ≤ 30mA VOUT ×98.5% 4.8 VOUT ×101.5% V IOUT(Max) (△VOUT/VOUT) △IOUT (△VOUT/VOUT) △VIN VDROP IQ ISTD PSRR (△VOUT/VOUT) △T VIN=5.5V, 4.850V VOUT=4.751V to 600 mA VIN=5.5V, 1mA ≤ IOUT ≤600mA 0.2 %/A 5.5V≤VIN≤6V, IOUT=30mA 0.02 %/V IOUT =10mA 5 8 IOUT =300mA 100 200 IOUT=600mA 200 400 VIN=5.5V, IOUT=0mA 55 80 µA 0.01 1.0 µA VIN=5.5V, VEN in OFF mode Ripple 0.5Vp-p VIN=5.5V, IOUT=100mA f=100Hz 65 f=1kHz 65 mV dB IOUT=30mA TA=-40°C to 85°C ±100 ppm/°C Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE No Load, 10Hz ≤ f ≤100kHz 50 µVRMS Thermal Shutdown Temperature Thermal Shutdown Hysteresis Thermal Resistance (Junction to Case) TOTSD 160 THYOTSD 30 θJC SOT-223 °C 50.9 Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage must be applied before a current source load is applied. Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only. Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 10 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 1.6 4.0 1.4 3.5 1.2 3.0 Output Voltage (V) Output Voltage (V) Typical Performance Characteristics 1.0 0.8 No Load o TA=-40 C 0.6 2.5 2.0 No Load 1.5 o TA=-40 C o TA=25 C 0.4 o TA=25 C 1.0 o TA=85 C 0.2 o VOUT=1.2V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 TA=85 C 0.5 0.0 0.0 6.0 VOUT=3.3V 0.5 1.0 1.5 2.0 Input Voltage (V) Figure 4. Output Voltage vs. Input Voltage 3.5 4.0 4.5 5.0 5.5 6.0 70 68 VOUT=4.8V 4.5 Quiescent Current (µA) TA=25 C 4.0 3.5 3.0 2.5 2.0 IOUT=0mA 1.5 IOUT=100mA 1.0 IOUT=300mA 0.5 IOUT=600mA 0.0 0.0 0.5 1.0 VIN=2.5V No Load 66 O Output Voltage (V) 3.0 Figure 5. Output Voltage vs. Input Voltage 5.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 64 62 60 58 56 54 52 50 48 6.0 46 -40 -20 0 20 40 60 80 o Input Voltage (V) Temperature ( C) Figure 6. Output Voltage vs. Input Voltage Jan. 2011 2.5 Input Voltage (V) Figure 7. Quiescent Current vs. Temperature Rev. 1. 4 BCD Semiconductor Manufacturing Limited 11 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 1.210 VIN=2.5V 70 Output Voltage (V) Quiescent Current (µA) CIN=1µF 1.208 60 50 40 30 No Load 20 COUT=1µF 1.206 1.204 IOUT=10mA IOUT=100mA o TA=-40 C 1.202 o 10 TA=25 C IOUT=300mA IOUT=600mA o TA=85 C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 1.200 -40 6.0 -20 0 20 40 60 80 o Temperature ( C) Input Voltage (V) Figure 8. Quiescent Current vs. Input Voltage Figure 9. Output Voltage vs. Temperature 1.3 1.2 3.35 Output Voltage (V) 3.33 1.1 CIN=1µF 1.0 Output Voltage (V) 3.34 VIN=4.3V COUT=1µF 3.32 3.31 3.30 3.29 0.9 0.8 0.7 0.6 0.5 0.4 VIN=2.5V 3.28 IOUT=10mA 0.3 3.27 IOUT=100mA 0.2 IOUT=300mA 0.1 TA=25 C IOUT=600mA 0.0 TA=85 C 3.26 3.25 -40 o o -0.1 -20 0 20 40 60 80 0.0 o Temperature ( C) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Current (A) Figure 10. Output Voltage vs. Temperature Jan. 2011 o TA= -40 C Figure 11. Output Voltage vs. Output Current Rev. 1. 4 BCD Semiconductor Manufacturing Limited 12 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 1.2 4.0 VIN=2.0V 3.5 Output Voltage (V) Output Voltage (V) 3.0 2.5 2.0 1.5 1.0 VIN=2.5V 0.8 VIN=5.5V VIN=5.0V VIN=6.0V 0.6 0.4 VIN=4.3V 1.0 o o TA=-40 C 0.5 TA=25 C 0.2 CIN=1µF o TA= 25 C 0.0 -0.5 0.0 o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 COUT=1µF 0.0 TA= 85 C 1.0 0.0 0.1 0.2 0.3 Output Current (A) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Output Current (A) Figure 12. Output Voltage vs. Output Current Figure 13. Output Voltage vs. Output Current 5.0 4.0 4.5 3.5 VOUT=4.8V 4.0 VIN=4.0V 3.5 VIN=4.3V 2.5 Output Voltage (V) Output Voltage (V) 3.0 VIN=5.0V 2.0 VIN=5.5V VIN=6.0V 1.5 1.0 o TA=25 C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VIN=5.0V 1.5 VIN=5.3V VIN=5.5V VIN=6.0V 0.0 0.0 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Output Current (A) Output Current (A) Figure 14. Output Voltage vs. Output Current Jan. 2011 2.0 0.5 0.0 0.0 2.5 1.0 CIN=1µF COUT=1µF 0.5 3.0 Figure 15. Output Voltage vs. Output Current Rev. 1. 4 BCD Semiconductor Manufacturing Limited 13 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) 350 350 VOUT=4.8V 300 o TA=-40 C O TA=-40 C o 250 TA= 25 C o TA= 85 C 200 150 100 TA=25 C O TA=85 C 200 150 100 50 50 0 0.0 O 250 Dropout Voltage (V) Dropout Voltage (mV) 300 VOUT=3.3V 0.1 0.2 0.3 0.4 0.5 0 0.0 0.6 0.1 0.2 Output Current (A) 0.3 0.4 0.5 0.6 Output Current (A) Figure 16. Dropout Voltage vs. Output Current Figure 17. Dropout Voltage vs. Output Current 260 Ground Current (µA) 220 70 VIN=4.3V o 65 TA=-40 C o 200 TA= 25 C 180 TA= 85 C 60 o PSRR (dB) 240 160 140 120 100 55 50 VIN=2.5V 45 Ripple=0.5V VOUT=1.2V 40 80 IOUT=10mA IOUT=100mA 35 IOUT=300mA 60 30 40 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Figure 18. Ground Current vs. Output Current Jan. 2011 20 100 1k 10k 100k Frequency (Hz) Output Current (A) Figure 19. PSRR vs. Frequency Rev. 1. 4 BCD Semiconductor Manufacturing Limited 14 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Performance Characteristics (Continued) Figure 20. Load Transient Figure 21. Enable On Figure 22. Enable Off Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 15 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Typical Application (Note 4) Note 4: It is recommended to use X7R or X5R dielectric capacitor if 1.0µF ceramic capacitor is selected as input/output capacitors. Figure 23. Typical Application of AP2111 Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 16 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.800(0.031) 0.300(0.012) R0.150(0.006) 0.100(0.004) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.190(0.007) 0.250(0.010) 1° 5° 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 17 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions (Continued) Unit: mm(inch) 3.202(0.126) 3.402(0.134) PSOP-8 Jan. 2011 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 18 Data Sheet 600mA CMOS LDO REGULATOR WITH ENABLE AP2111 Mechanical Dimensions (Continued) Rev. 1. 4 Unit: mm(inch) 3.700(0.146) 3.300(0.130) 6.700(0.264) Jan. 2011 7.300(0.287) SOT-223 BCD Semiconductor Manufacturing Limited 19 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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