Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR General Description Features The AP2125 series are 300mA, positive voltage regulator ICs fabricated by CMOS process. · · Each of these ICs is equipped with a voltage reference, an error amplifier, a resistor network for setting output voltage, a chip enable circuit, a current limit circuit and OTSD (over temperature shut down) circuit to prevent the IC from over current and over temperature. · · · · · · · The AP2125 series have features of high ripple rejection, low dropout voltage, low noise, high output voltage accuracy and low current consumption which make them ideal for use in various battery-powered apparatus. Excellent Ripple Rejection: 70dB Typical (1.8V Version) Low Dropout Voltage: 65mV (IOUT=100mA, 3.3V Version) Low Standby Current: 0.01µA Typical Low Quiescent Current: 60µA Typical Extremely Low Noise: 50µVrms Typical Maximum Output Current: 300mA (Min.) High Output Voltage Accuracy: ±2% Compatible with Low ESR Ceramic Capacitor Excellent Line/Load Regulation Applications The AP2125 have 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.15V and 4.2V fixed voltage versions. · · · · · · These ICs are available in tiny SC-70-5 and SC-82 packages as well as industry standard SOT-23-3 and SOT-23-5 packages. SOT-23-3 AP2125 SOT-23-5 CDMA/GSM Cellular Handsets Battery-powered Equipments Laptops, Palmtops, Notebook Computers Hand-held Instruments PCMCIA Cards Portable Information Appliances SC-70-5 SC-82 Figure 1. Package Types of AP2125 May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 1 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Pin Configuration N Package (SOT-23-3) K/KS Package (SOT-23-5/SC-70-5) KC Package (SC-82) VIN 3 1 2 GND VOUT VIN 1 GND 2 CE 3 5 VOUT 4 NC CE 1 4 VIN GND 2 3 VOUT Figure 2. Pin Configuration of AP2125 (Top View) Pin Description Pin Number Pin Name Function SOT-23-3 SOT-23-5/ SC-70-5 SC-82 3 1 4 VIN Input voltage 1 2 2 GND Ground 3 1 CE Active high enable input pin. Logic high=enable, logic low=shutdown NC No connection 4 2 5 3 VOUT Regulated output voltage May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 2 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Functional Block Diagram Shutdown and Logic Control 3 CE VIN 3 (1) Shutdown and Logic Control 1 (4) VIN VREF VREF MOS Driver MOS Driver 2 5 (3) VOUT Current Limit and Thermal Protection Current Limit and Thermal Protection 1 2 (2) GND VOUT GND A(B) A SOT-23-5/SC-70-5 SOT-23-3 B SC-82 Figure 3. Functional Block Diagram of AP2125 May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 3 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Ordering Information AP2125 E1: Lead Free G1: Green Circuit Type TR: Tape and Reel Package 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V 4.15: Fixed Output 4.15V 4.2: Fixed Output 4.2V N: SOT-23-3 K: SOT-23-5 KS: SC-70-5 KC: SC-82 Package SOT-23-3 SOT-23-5 Temperature Range -40 to 85oC oC -40 to 85 Part Number Marking ID Lead Free Green AP2125N-1.8TRE1 AP2125N-1.8TRG1 EJ2 GJ2 Tape & Reel AP2125N-2.5TRE1 AP2125N-2.5TRG1 EJ4 GJ4 Tape & Reel AP2125N-2.8TRE1 AP2125N-2.8TRG1 EJ5 GJ5 Tape & Reel AP2125N-3.0TRE1 AP2125N-3.0TRG1 EJ6 GJ6 Tape & Reel AP2125N-3.3TRE1 AP2125N-3.3TRG1 EJ7 GJ7 Tape & Reel AP2125N-4.2TRE1 AP2125N-4.2TRG1 EJ3 GJ3 Tape & Reel AP2125K-1.8TRE1 AP2125K-1.8TRG1 ECB GCB Tape & Reel AP2125K-2.5TRE1 AP2125K-2.5TRG1 ECD GCD Tape & Reel AP2125K-2.8TRE1 AP2125K-2.8TRG1 ECE GCE Tape & Reel AP2125K-3.0TRE1 AP2125K-3.0TRG1 ECF GCF Tape & Reel AP2125K-3.3TRE1 AP2125K-3.3TRG1 ECG GCG Tape & Reel GCJ Tape & Reel AP2125K-4.2TRE1 AP2125K-4.2TRG1 ECC GCC Tape & Reel AP2125KS-1.8TRE1 AP2125KS-1.8TRG1 26 B6 Tape & Reel AP2125KS-2.5TRE1 AP2125KS-2.5TRG1 35 C5 Tape & Reel AP2125KS-2.8TRE1 AP2125KS-2.8TRG1 27 B7 Tape & Reel AP2125KS-3.0TRE1 AP2125KS-3.0TRG1 36 C6 Tape & Reel AP2125KS-3.3TRE1 AP2125KS-3.3TRG1 28 B8 Tape & Reel AP2125KS-4.2TRE1 AP2125KS-4.2TRG1 34 C4 Tape & Reel AP2125KC-1.8TRE1 AP2125KC-1.8TRG1 91 T1 Tape & Reel AP2125KC-2.5TRE1 AP2125KC-2.5TRG1 96 T6 Tape & Reel AP2125KC-2.8TRE1 AP2125KC-2.8TRG1 92 T2 Tape & Reel AP2125KC-3.0TRE1 AP2125KC-3.0TRG1 97 T7 Tape & Reel AP2125KC-3.3TRE1 AP2125KC-3.3TRG1 93 T3 Tape & Reel AP2125KC-4.2TRE1 AP2125KC-4.2TRG1 95 T5 Tape & Reel AP2125K-4.15TRG1 SC-70-5 SC-82 -40 to 85oC -40 to 85oC Green Packing Type Lead Free BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 4 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 6.5 V Enable Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 450 mA TJ 150 oC TSTG -65 to 150 oC TLEAD 260 Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) θJA Thermal Resistance o C SOT-23-3 200 SOT-23-5 200 SC-70-5 300 SC-82 300 oC/W ESD (Human Body Model) ESD 6000 V ESD (Machine Model) ESD 400 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN VOUT+0.5V 6 V Operating Ambient Temperature Range TA -40 85 oC May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 5 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Electrical Characteristics AP2125-1.8 Electrical Characteristics (VIN=2.8V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions VIN=2.8V 1mA≤IOUT≤30mA Min Typ Max Unit 1.764 1.8 1.836 V 6 V VIN IOUT(MAX) VIN-VOUT=1V, VOUT=1.76V 300 360 mA Load Regulation VRLOAD VIN=2.8V 1mA≤IOUT≤300mA 6 mV Line Regulation VRLINE 2.8V≤VIN≤6V IOUT=30mA 1 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 10 12 IOUT=100mA 100 120 IOUT=300mA 300 360 VIN=2.8V, IOUT=0mA 60 90 µA 0.01 1.0 µA Standby Current ISTD VIN=2.8V VCE in OFF mode Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=2.8V Output Voltage Temperature Coefficient (∆VOUT/VOUT)/∆T mV f=100Hz 70 dB f=1KHz 70 dB ±100 ppm/oC IOUT=30mA Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤f≤100kHz 50 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" 1.5 V 0.4 Thermal Shutdown 160 Thermal Shutdown Hysteresis 25 May. 2010 Rev. 1. 4 V o C oC BCD Semiconductor Manufacturing Limited 6 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Electrical Characteristics (Continued) AP2125-2.5 Electrical Characteristics (VIN=3.5V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions VIN=3.5V 1mA≤IOUT≤30mA Min Typ Max Unit 2.45 2.5 2.55 V 6 V VIN IOUT(MAX) VIN-VOUT=1V, VOUT=2.45V 300 360 mA Load Regulation VRLOAD VIN=3.5V 1mA≤IOUT≤300mA 10 mV Line Regulation VRLINE 3.5V≤VIN≤6V IOUT=30mA 1 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 6.5 10 IOUT=100mA 65 100 IOUT=300mA 200 300 VIN=3.5V, IOUT=0mA 60 90 µA 0.01 1.0 µA Standby Current ISTD VIN=3.5V VCE in OFF mode Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=3.5V Output Voltage Temperature Coefficient (∆VOUT/VOUT)/∆T mV f=100Hz 65 dB f=1KHz 65 dB ±100 ppm/oC IOUT=30mA Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤f≤100kHz 50 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" 1.5 V 0.4 Thermal Shutdown 160 Thermal Shutdown Hysteresis 25 May. 2010 Rev. 1. 4 V o C oC BCD Semiconductor Manufacturing Limited 7 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Electrical Characteristics (Continued) AP2125-2.8 Electrical Characteristics (VIN=3.8V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions VIN=3.8V 1mA≤IOUT≤30mA Min Typ Max Unit 2.744 2.8 2.856 V 6 V VIN IOUT(MAX) VIN-VOUT=1V, VOUT=2.74V 300 360 mA Load Regulation VRLOAD VIN=3.8V 1mA≤IOUT≤300mA 11 mV Line Regulation VRLINE 3.8V≤VIN≤6V IOUT=30mA 1 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 6.5 10 IOUT=100mA 65 100 IOUT=300mA 200 300 VIN=3.8V, IOUT=0mA 60 90 µA 0.01 1.0 µA Standby Current ISTD VIN=3.8V VCE in OFF mode Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=3.8V Output Voltage Temperature Coefficient (∆VOUT/VOUT)/∆T mV f=100Hz 65 dB f=1KHz 65 dB ±100 ppm/oC IOUT=30mA Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤f≤100kHz 50 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" 1.5 V 0.4 Thermal Shutdown 160 Thermal Shutdown Hysteresis 25 May. 2010 Rev. 1. 4 V o C oC BCD Semiconductor Manufacturing Limited 8 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Electrical Characteristics (Continued) AP2125-3.0 Electrical Characteristics (VIN=4.0V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions VIN=4.0V 1mA≤IOUT≤30mA Min Typ Max Unit 2.94 3.0 3.06 V 6 V VIN IOUT(MAX) VIN-VOUT=1V, VOUT=2.94V 300 360 mA Load Regulation VRLOAD VIN=4.0V 1mA≤IOUT≤300mA 12 mV Line Regulation VRLINE 4.0V≤VIN≤6V IOUT=30mA 1 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 6.5 10 IOUT=100mA 65 100 IOUT=300mA 200 300 VIN=4.0V, IOUT=0mA 60 90 µA 0.01 1.0 µA Standby Current ISTD VIN=4.0V VCE in OFF mode Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=4.0V Output Voltage Temperature Coefficient (∆VOUT/VOUT)/∆T mV f=100Hz 65 dB f=1KHz 65 dB ±100 ppm/oC IOUT=30mA Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤f≤100kHz 50 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" 1.5 V 0.4 Thermal Shutdown 160 Thermal Shutdown Hysteresis 25 May. 2010 Rev. 1. 4 V o C oC BCD Semiconductor Manufacturing Limited 9 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Electrical Characteristics (Continued) AP2125-3.3 Electrical Characteristics (VIN=4.3V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions VIN=4.3V 1mA≤IOUT≤30mA Min Typ Max Unit 3.234 3.3 3.366 V 6 V VIN IOUT(MAX) VIN-VOUT=1V, VOUT=3.23V 300 360 mA Load Regulation VRLOAD VIN=4.3V 1mA≤IOUT≤300mA 13 mV Line Regulation VRLINE 4.3V≤VIN≤6V IOUT=30mA 1 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 6.5 10 IOUT=100mA 65 100 IOUT=300mA 200 300 VIN=4.3V, IOUT=0mA 60 90 µA 0.01 1.0 µA Standby Current ISTD VIN=4.3V VCE in OFF mode Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=4.3V Output Voltage Temperature Coefficient (∆VOUT/VOUT)/∆T mV f=100Hz 65 dB f=1KHz 65 dB ±100 ppm/oC IOUT=30mA Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤f≤100kHz 50 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" 1.5 V 0.4 Thermal Shutdown 160 Thermal Shutdown Hysteresis 25 May. 2010 Rev. 1. 4 V o C oC BCD Semiconductor Manufacturing Limited 10 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Electrical Characteristics (Continued) AP2125-4.15 Electrical Characteristics (VIN=5.15V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions VIN=5.15V 1mA≤IOUT≤30mA Min Typ Max Unit 4.067 4.15 4.233 V 6 V VIN IOUT(MAX) VIN-VOUT=1V, VOUT=4.06V 300 360 mA Load Regulation VRLOAD VIN=5.15V 1mA≤IOUT≤300mA 13 mV Line Regulation VRLINE 5.15V≤VIN≤6V IOUT=30mA 1 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 6.5 10 IOUT=100mA 65 100 IOUT=300mA 200 300 VIN=5.15V, IOUT=0mA 60 90 µA 0.01 1.0 µA Standby Current ISTD VIN=5.15V VCE in OFF mode Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=5.15V Output Voltage Temperature Coefficient (∆VOUT/VOUT)/∆T mV f=100Hz 65 dB f=1KHz 65 dB ±100 ppm/oC IOUT=30mA Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤f≤100kHz 50 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" 1.5 V 0.4 Thermal Shutdown 160 Thermal Shutdown Hysteresis 25 May. 2010 Rev. 1. 4 V o C oC BCD Semiconductor Manufacturing Limited 11 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Electrical Characteristics (Continued) AP2125-4.2 Electrical Characteristics (VIN=5.2V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions VIN=5.2V 1mA≤IOUT≤30mA Min Typ Max Unit 4.116 4.2 4.284 V 6 V VIN IOUT(MAX) VIN-VOUT=1V, VOUT=4.12V 300 360 mA Load Regulation VRLOAD VIN=5.2V 1mA≤IOUT≤300mA 13 mV Line Regulation VRLINE 5.2V≤VIN≤6V IOUT=30mA 1 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 6.5 10 IOUT=100mA 65 100 IOUT=300mA 200 300 VIN=5.2V, IOUT=0mA 60 90 µA 0.01 1.0 µA Standby Current ISTD VIN=5.2V VCE in OFF mode Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p VIN=5.2V Output Voltage Temperature Coefficient (∆VOUT/VOUT)/∆T mV f=100Hz 65 dB f=1KHz 65 dB ±100 ppm/oC IOUT=30mA Short Current Limit ISHORT VOUT=0V 50 mA RMS Output Noise VNOISE 10Hz ≤f≤100kHz 50 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" 1.5 V 0.4 Thermal Shutdown 160 Thermal Shutdown Hysteresis 25 May. 2010 Rev. 1. 4 V o C oC BCD Semiconductor Manufacturing Limited 12 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics 3.50 1.90 AP2125-1.8 VIN=2.8V 1.88 3.46 o TC=25 C 1.84 Output Voltage (V) Output Voltage (V) 1.86 1.82 1.80 1.78 1.76 3.42 3.40 3.38 3.36 3.34 1.72 3.32 3.30 0 50 100 150 200 250 o TC=25 C 3.44 1.74 1.70 AP2125-3.3 VIN=4.3V 3.48 300 0 50 100 250 300 Figure 5. Output Voltage vs. Output Current Figure 4. Output Voltage vs. Output Current 400 400 360 360 AP2125-1.8 VIN=2.8V 280 o 240 TC=-40 C o 200 TC=25 C 160 TC=85 C o 120 280 240 40 0 90 120 150 180 210 240 270 300 TC=25 C TC=85oC 120 80 60 o 160 40 30 o TC=-40 C 200 80 0 AP2125-3.3 VIN=4.3V 320 Dropout Voltage (mV) 320 Dropout Voltage (mV) 200 Output Current (mA) Output Current (mA) 0 150 0 30 60 90 120 150 180 210 240 270 300 Output Current (mA) Output Current (mA) Figure 6. Dropout Voltage vs. Output Current Figure 7. Dropout Voltage vs. Output Current May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 13 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics (Continued) 400 360 IOUT=10mA 320 IOUT=100mA AP2125-1.8 VIN=2.8V IOUT=200mA 280 Dropout Voltage (mV) Dropout Voltage (mV) 400 IOUT=300mA 240 200 160 120 360 IOUT=10mA 320 IOUT=100mA IOUT=200mA 280 IOUT=300mA 240 200 160 120 80 80 40 40 0 0 -25 0 25 50 -25 75 0 25 50 75 o o Case Temperature ( C) Case Temperature ( C) Figure 8. Dropout Voltage vs. Case Temperature Figure 9. Dropout Voltage vs. Case Temperature 2.0 3.6 1.8 3.2 1.6 2.8 1.4 Output Voltage (V) Output Voltage (V) AP2125-3.3 VIN=4.3V 1.2 1.0 0.8 AP2125-1.8 o TC=25 C 0.6 0.4 0.0 50 100 150 200 250 300 350 400 450 1.6 1.2 AP2125-3.3 o TC=25 C VIN=4.3V VIN=6V 0.4 VIN=6V 0 2.0 0.8 VIN=2.8V 0.2 2.4 0.0 500 0 50 100 150 200 250 300 350 400 450 500 Output Current (mA) Output Current (mA) Figure 11. Current Limit Figure 10. Current Limit May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 14 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics (Continued) 2.0 3.6 1.8 3.2 1.4 o TC=-40 C 1.2 o TC=25 C 1.0 o TC=85 C 0.8 AP2125-3.3 VIN=4.3V 2.8 AP2125-1.8 VIN=2.8V Output Voltage (V) Output Voltage (V) 1.6 2.4 TC=-40 C 2.0 TC=25 C 1.6 TC=85 C o o o 1.2 0.6 0.8 0.4 0.4 0.2 0.0 0.0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 Output Current (mA) 2.0 3.6 1.8 3.2 Output Voltage (V) Output Voltage (V) 1.2 1.0 0.8 0.6 0.4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 350 400 450 500 4.0 4.5 5.0 5.5 1mA 100mA 300mA 2.4 2.0 1.6 1.2 0.8 AP2125-1.8 o TC=25 C 0.2 0.0 0.0 300 2.8 1mA 100mA 300mA 1.4 250 Figure 13. Current Limit Figure 12. Current Limit 1.6 200 Output Current (mA) AP2125-3.3 o TC=25 C 0.4 0.0 0.0 6.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Input Voltage (V) Figure 14. Output Voltage vs. Input Voltage Figure 15. Output Voltage vs. Input Voltage May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 15 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics (Continued) 2.0 3.6 1.8 3.2 2.8 o 1.4 TC=-40 C 1.2 TC=25 C 1.0 TC=85 C Output Voltage (V) Output Voltage (V) 1.6 o o 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 o TC=-40 C o 2.4 TC=25 C 2.0 TC=85 C o 1.6 1.2 AP2125-1.8 o TC=25 C 0.8 AP2125-3.3 o TC=25 C No Load 0.4 No Load 4.5 5.0 5.5 0.0 0.0 6.0 0.5 1.0 1.5 2.0 Input Voltage (V) 4.0 4.5 5.0 5.5 6.0 IOUT=10mA 1.82 IOUT=30mA 1.80 IOUT=100mA IOUT=300mA 1.78 3.34 3.32 1.74 3.24 1.72 3.22 3.20 25 50 75 IOUT=30mA 3.28 3.26 0 IOUT=10mA 3.30 1.76 -25 AP2125-3.3 VIN=4.3V 3.36 Output Voltage (V) Output Voltage (V) 3.38 AP2125-1.8 VIN=2.8V 1.84 1.70 3.5 3.40 1.90 1.86 3.0 Figure 17. Output Voltage vs. Input Voltage Figure 16. Output Voltage vs. Input Voltage 1.88 2.5 Input Voltage (V) IOUT=100mA IOUT=300mA -25 0 25 50 75 o o Case Temperature ( C) Case Temperature ( C) Figure 19. Output Voltage vs. Case Temperature Figure 18. Output Voltage vs. Case Temperature May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 16 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics (Continued) 100 100 90 80 70 60 50 40 TC=-40oC 30 TC=25 C o o TC=85 C 20 70 60 50 o TC=-40 C 40 o TC=25 C 30 TC=85oC 20 10 10 0 AP2125-3.3 No Load 80 Supply Current (µA) Supply Current (µA) 90 AP2125-1.8 No Load 0 0 1 2 3 4 5 6 0 1 2 Input Voltage (V) Figure 20. Supply Current vs. Input Voltage 5 6 80 76 76 AP2125-1.8 VIN=2.8V 72 No Load 68 64 60 56 52 64 60 56 52 48 44 44 0 20 40 60 No Load 68 48 -20 AP2125-3.3 VIN=4.3V 72 Supply Current (µA) Supply Current (µA) 4 Figure 21. Supply Current vs. Input Voltage 80 40 -40 3 Input Voltage (V) 40 -40 80 -20 0 20 40 60 80 o o Case Temperature ( C) Case Temperature ( C) Figure 22. Supply Current vs. Case Temperature Figure 23. Supply Current vs. Case Temperature May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 17 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics (Continued) 130 150 120 140 130 110 120 110 90 Supply Current (µA) Supply Current (µA) 100 80 70 o 60 TC=-40 C 50 TC=25 C 40 TC=85 C o o 30 AP2125-1.8 VIN=2.8V 20 90 80 70 o 60 TC=-40 C 50 TC=25 C 40 TC=85 C o o 30 AP2125-3.3 VIN=4.3V 20 10 0 100 10 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 Output Current (mA) Output Current (mA) Figure 24. Supply Current vs. Output Current Figure 25. Supply Current vs. Output Current 120 150 110 135 100 120 Supply Current (µA) Supply Current (µA) 90 80 70 VIN=2.8V 60 VIN=6V 50 40 105 90 75 VIN=4.3V 60 VIN=6V 45 30 10 0 30 AP2125-1.8 o TC=25 C 20 0 40 80 120 160 200 240 280 320 360 400 440 AP2125-3.3 o TC=25 C 15 0 480 0 40 80 120 160 200 240 280 320 360 Output Current (mA) Output Current (mA) Figure 26. Supply Current vs. Output Current Figure 27. Supply Current vs. Output Current May. 2010 Rev. 1. 4 400 BCD Semiconductor Manufacturing Limited 18 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics (Continued) VIN (1V/Div) VIN (0.5V/Div) AP2125-1.8 4.8 3.8 2.8 AP2125-3.3 5 4.5 4 ∆VOUT (0.05V/Div) ∆VOUT (0.02V/Div) 0.02 0 -0.02 0.05 0 -0.05 Time (100µs/Div) Time (40µs/Div) Figure 29. Line Transient (Conditions: IOUT=30mA, COUT=1µF, VIN=4 to 5V) Figure 28. Line Transient (Conditions: IOUT=30mA, COUT=1µF, VIN=2.8 to 3.8V) VOUT (0.02V/Div) VOUT (0.02V/Div) AP2125-1.8 1.84 1.82 IOUT (50mA/Div) IOUT (50mA/Div) 1.8 100 50 0 AP2125-3.3 3.34 3.32 3.3 100 50 0 Time (40µs/Div) Time (40µs/Div) Figure 31. Load Transient (Conditions: IOUT=10 to 100mA, CIN=1µF, COUT=1µF, VIN=4.3 V) Figure 30. Load Transient (Conditions: IOUT=10 to 100mA, CIN=1µF, COUT=1µF, VIN=2.8 V) May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 19 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics (Continued) 1000 AP2125-1.8 CIN = 1µF AP2125-2.8 VCE (1V/Div) 3 COUT = 1µF 100 2 ESR (Ω) 1 0 10 Stable Area vOUT (1V/Div) 3 1 2 1 0.1 0 0 50 100 Time (200µs/Div) 250 300 100 100 AP2125-1.8 VIN=2.8V 90 80 IOUT=30mA 90 AP2125-3.3 VIN=4.3V 80 IOUT=30mA 70 PSRR (dB) 70 PSRR (dB) 200 Figure 33. ESR vs. Output Current Figure 32. Enable Input Response and Auto-discharge (Conditions: VCE=0 to 3V, CIN=1µF, COUT=1µF, VIN=3V, no load) 60 50 40 60 50 40 30 30 20 20 10 10 0 10 150 Output Current (mA) 100 1k 10k 0 10 100k 100 1k 10k 100k Frequency (Hz) Frequency (Hz) Figure 34. PSRR Figure 35. PSRR May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 20 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Performance Characteristics (Continued) 800 600 550 AP2125-1.8 Package: SC-70-5 No Heatsink 450 AP2125-3.3 Package: SC-70-5 No Heatsink 700 Power Dissipation (mW) Power Dissipation (mW) 500 400 350 300 250 200 600 500 400 300 200 150 100 100 50 0 0 30 40 50 60 70 80 90 100 110 120 30 40 50 60 70 80 90 100 110 120 o o Ambient Temperature ( C) Ambient Temperature ( C) Figure 37. Power Dissipation vs. Ambient Temperature Figure 36. Power Dissipation vs. Ambient Temperature May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 21 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Typical Application AP2125-1.8 VIN=2.8V VIN VIN VOUT=1.8V VOUT GND VOUT COUT 1µF CIN 1µF VIN AP2125-3.0 VIN=4V VIN VOUT=3V VOUT VOUT GND COUT NC CE 1µF CIN 1µF Figure 38. Typical Application of AP2125 May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 22 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Mechanical Dimensions SOT-23-3 Unit: mm(inch) 2.820(0.111) 3.020(0.119) 1.800(0.071) 2.000(0.079) 0.200(0.008) 0 8 0.300(0.012) 0.500(0.020) 1.450(0.057) MAX. 0.950(0.037) TYP 0.300(0.012) 0.600(0.024) 2.650(0.104) 2.950(0.116) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) ° ° 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 23 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Mechanical Dimensions (Continued) SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.150(0.006) 0.900(0.035) 1.300(0.051) May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 24 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Mechanical Dimensions (Continued) SC-70-5 Unit: mm(inch) 0° 2.000(0.079) 8° 2.200(0.087) 0.150(0.006) 0.350(0.014) 0.200(0.008) 1.150(0.045) 1.350(0.053) 2.150(0.085) 2.450(0.096) 0.260(0.010) 0.460(0.018) 0.525(0.021)REF 0.650(0.026)TYP 0.000(0.000) 0.100(0.004) 1.200(0.047) 1.400(0.055) 0.080(0.003) 0.150(0.006) 0.900(0.035) 0.900(0.035) 1.000(0.039) 1.100(0.043) May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 25 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2125 Mechanical Dimensions (Continued) SC-82 Unit: mm(inch) 0.250(0.010) 0.400(0.016) 4° 12° 0.150(0.006) Typ 1.150(0.045) 1.350(0.053) 4° 12 ° 0.100(0.004) 0.260(0.010) 1.800(0.071) 2.400(0.094) 0° 8° 0.260(0.010) 0.460(0.018) 0.350(0.014) 0.500(0.020) 1.800(0.071) 2.200(0.087) 1.300(0.051) Typ 0.700(0.027) 1.000(0.039) 0.800(0.031) 1.100(0.043) 4° 12° 0.000(0.000) 0.100(0.004) May. 2010 Rev. 1. 4 BCD Semiconductor Manufacturing Limited 26 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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