APM4410 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/11.5A, RDS(ON) = 9mΩ(typ.) @ VGS = 10V RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V • • • High Density Cell Design Reliable and Rugged S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Package SO − 8 Applications • D Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G Ordering and Marking Information S N-Channel MOSFET APM 4410 P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e Tem p. R ange P ackage C ode APM 4410 K : APM 4410 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Maximum Drain Current – Continuous 11.5 IDM Maximum Drain Current – Pulsed PD Maximum Power Dissipation 50 TA=25°C 2.5 TA=100°C 1.0 Unit V A W ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 1 www.anpec.com.tw APM4410 Thermal Characteristics Symbol TJ Parameter Rating Maximum Junction Temperature 150 T STG Storage Temperature Range R θJA Thermal Resistance - Junction to Ambient Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD 50 °C/W (TA=25°C unless otherwise noted) Test Condition Drain-Source Breakdown Voltage VGS =0V, ID=250µA Zero Gate Voltage Drain Current VDS =24V, VGS =0V Gate Threshold Voltage VDS =VGS, ID=250µA Gate Leakage Current VGS =±20V, VDS =0V Drain-Source On-state Resistance b b °C -55 to 150 Parameter Diode Forward Voltage Unit APM4410 Unit Min. Typa. Max. 30 1 VGS =10V, ID=11.5A VGS =4.5V, ID=5A ISD=2.3A, VGS =0V V 1 uA 3 V ±100 nA 9 11 14.5 16 0.6 1.2 mΩ V Dynamica Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS =15V, VGS =10V, ID=10A VDD=15V, RL=15Ω, ID=1A , V GEN=10V, RG=6Ω, VGS =0V, VDS=25V Frequency = 1.0MHZ 45 60 10 nC 8 16 25 24 35 78 110 42 80 ns 2000 400 pF 220 Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 2 www.anpec.com.tw APM4410 Typical Characteristics Output Characteristics Transfer Characteristics 50 50 40 40 IDS-Drain Current (A) IDS-Drain Current (A) VGS=5,6,7,8,9,10V VGS=4V 30 30 20 20 10 TJ=25°C TJ=-55°C TJ=125°C 10 V GS=3V 0 0 2 4 6 8 0 10 0 1 VDS-Drain-to-Source Voltage (V) 2 3 4 5 VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.4 0.020 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250µA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 VGS=4.5V 0.012 V GS=10V 0.008 0.004 0.000 100 125 150 Tj-Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 0.016 0 5 10 15 20 25 30 35 IDS-Drain Current (A) 3 www.anpec.com.tw APM4410 Typical Characteristics Cont. On-Resistaence vs. Junction Temperature 0.10 2.00 IDS=11.5A RDS(ON)-On-Resistance (Ω) (Normalized) RDS (ON)-On-Resistance (Ω) On-Resistance vs. Gate-to-Source Voltage 0.08 0.06 0.04 0.02 0.00 0 2 4 6 8 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 10 Gate Voltage (V) 0 25 50 75 100 125 150 Capacitance Characteristics 3000 10 VDS=15V IDS=11.5A 2500 8 C-Capacitance (pF) VGS-Gate-to-Source Voltage (V) -25 Tj-Junction Temperature (°C) Gate Charge 6 4 2 0 VGS=10V IDS=11.5A Ciss 2000 1500 1000 Coss 500 0 9 18 27 36 0 45 0 5 10 15 20 25 30 VDS-Drain-to-Source Voltage (V) QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 Crss 4 www.anpec.com.tw APM4410 Typical Characteristics Cont. Source-Drain Diode Forward Voltage Single Pulse Power 50 ISD-Source Current (A) 80 Power (W) 60 10 TJ=25°C TJ=150°C 40 20 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 VSD-Source to Drain Voltage 1 10 Time (sec) Normalized Effective Transient Thermal Impedance Normalized Transient Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50°C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted D=0.02 SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 5 www.anpec.com.tw APM4410 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM4410 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb). Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4410 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 W Bo F Ao D1 Ko T2 J C A B T1 SOP-8 A 330±1 Application SOP-8 F 5.5 ± 0.1 Application B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 8 www.anpec.com.tw APM4410 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.5 - July., 2002 9 www.anpec.com.tw