APM4435K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-8A , RDS(ON)=16mΩ(typ.) @ VGS=-10V RDS(ON)=24mΩ(typ.) @ VGS=-4.5V • • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 SOP-8 Package (1, 2, 3) S S S Lead Free Available (RoHS Compliant) Applications (4) G • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems DD DD (5, 6, 7, 8) P-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4435 Lead Free Code Handling Code Temp. Range Package Code APM4435 K : APM4435 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 1 www.anpec.com.tw APM4435K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID* Continuous Drain Current IDM* IS* Pulsed Drain Current Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V -8 VGS=-10V A -30 A -3 150 °C -55 to 150 TA=25°C TA=100°C Thermal Resistance-Junction to Ambient 2 0.8 W 62.5 °C/W Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=-250µA Typ. Gate Leakage Current VGS=±25V, VDS=0V Max. -30 -1 -30 -1 -1.5 µA -2 V ±100 nA VGS=-10V, IDS=-8A 16 20 VGS=-4.5V, IDS=-5A 24 30 -0.8 -1.3 ISD=-3A, VGS=0V Unit V TA=25°C VDS=VGS, IDS=-250µA Diode Forward Voltage Min. VDS=-24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM4435K mΩ V b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-25V, Frequency=1.0MHz VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω, Turn-off Fall Time Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 2 Ω 10 3200 pF 560 250 16 30 17 32 75 136 31 57 ns www.anpec.com.tw APM4435K Electrical Characteristics (Cont.) Symbol Parameter Gate Charge Characteristics Qg Total Gate Charge (TA = 25°C unless otherwise noted) Test Condition APM4435K Min. Typ. Max. 48 60 Unit b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-8A 10 nC 9 Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 3 www.anpec.com.tw APM4435K Typical Characteristics Drain Current 2.5 10 2.0 8 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.5 1.0 0.5 6 4 2 o o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Rd s(o n) Lim it -ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 1ms 10ms 1 100ms 1s 0.1 DC O TA=25 C 0.01 0.01 0 Tj - Junction Temperature (°C) 100 10 TA=25 C,VG=-10V 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4435K Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 40 30 VGS= -4, -5, -6, -7, -8, -9, -10V 35 RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) 25 20 VGS= -3V 15 10 5 0 0 2 4 6 8 30 VGS= -4.5V 25 20 VGS= -10V 15 10 5 0 10 0 5 10 15 20 25 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 2.0 30 30 IDS = -250µA 1.8 Normalized Threshold Voltage -ID - Drain Current (A) 25 20 15 o Tj=125 C 10 o Tj=-55 C o Tj=25 C 5 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 0.0 -50 -25 5 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4435K Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 30 2.00 VGS = -10V IDS = -8A 10 o Tj=150 C 1.50 -IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 o Tj=25 C 1 0.25 o 0.00 -50 -25 RON@Tj=25 C: 16mΩ 0 25 50 0.3 1.2 1.5 Capacitance Gate Charge 10 Frequency=1MHz 4000 8 3500 -VGS - Gate-source Voltage (V) VD= -15V 9 I = -8A D Ciss 3000 2500 2000 1500 1000 Coss 500 Crss 0 0.9 -VSD - Source - Drain Voltage (V) 4500 0 0.6 Tj - Junction Temperature (°C) 5000 C - Capacitance (pF) 0.1 0.0 75 100 125 150 7 6 5 4 3 2 1 0 5 10 15 20 25 30 5 10 15 20 25 30 35 40 45 50 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 0 6 www.anpec.com.tw APM4435K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Millimeters Inches A Min. 1.35 Max. 1.75 Min. 0.053 Max. 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 1 8° 8° Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 7 www.anpec.com.tw APM4435K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Tim e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 8 www.anpec.com.tw APM4435K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volum e m m Volume mm <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 D1 9 Ko www.anpec.com.tw APM4435K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 SOP-8 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 10 www.anpec.com.tw